The Physics Of Submicron Semiconductor Devices

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The Physics Of Submicron Semiconductor Devices

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Author : Harold L. Grubin
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-11

The Physics Of Submicron Semiconductor Devices written by Harold L. Grubin and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-11 with Technology & Engineering categories.

The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.

Physics Of Submicron Devices

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Author : David K. Ferry
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Physics Of Submicron Devices written by David K. Ferry and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.

The purposes of this book are many. First, we must point out that it is not a device book, as a proper treatment of the range of important devices would require a much larger volume even without treating the important physics for submicron devices. Rather, the book is written principally to pull together and present in a single place, and in a (hopefully) uniform treatment, much of the understanding on relevant physics for submicron devices. Indeed, the understand ing that we are trying to convey through this work has existed in the literature for quite some time, but has not been brought to the full attention of those whose business is the making of submicron devices. It should be remarked that much of the important physics that is discussed here may not be found readily in devices at the 1.0-JLm level, but will be found to be dominant at the O.I-JLm level. The range between these two is rapidly being covered as technology moves from the 256K RAM to the 16M RAM chips.

The Physics Of Submicron Semiconductor Devices

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Author : Harold L Grubin
language : en
Publisher: Springer
Release Date : 2014-01-15

The Physics Of Submicron Semiconductor Devices written by Harold L Grubin and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-01-15 with categories.

Numerical Simulation Of Submicron Semiconductor Devices

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Author : Kazutaka Tomizawa
language : en
Publisher: Artech House on Demand
Release Date : 1993-01-01

Numerical Simulation Of Submicron Semiconductor Devices written by Kazutaka Tomizawa and has been published by Artech House on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993-01-01 with Mathematics categories.

Describes the basic theory of carrier transport, develops numerical algorithms used for transport problems or device simulations, and presents real-world examples of implementation.

The Physics Of Submicron Structures

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Author : Harold L. Grubin
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

The Physics Of Submicron Structures written by Harold L. Grubin and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.

Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser extent by the advent of molecular beam epitaxy and metal/organic chemical vapor deposition which has made possible the control of semiconductor boundaries on a quantum level. This new control of boundary condi tions in ultra small electronic research is the mathematical reason for a whole set of innovative ideas. For the first time in the history of semiconductors, it is possible to design device functions from physical considerations involving ~ngstom scale dimensions. At the time the meeting was held, July 1982, it was one of the first strong signals of the powerful developments in this area. During the meeting, important questions have been answered concerning ballistic transport, Monte Carlo simulations of high field transport and other developments pertinent to new device concepts and the understanding of small devices from physics to function. The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F.

Fundamentals Of Semiconductor Physics And Devices

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Author :
language : en
Publisher: World Scientific
Release Date : 1997

Fundamentals Of Semiconductor Physics And Devices written by and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Science categories.

This book is an introduction to the principles of semiconductor physics, linking its scientific aspects with practical applications. It is addressed to both readers who wish to learn semiconductor physics and those seeking to understand semiconductor devices. It is particularly well suited for those who want to do both.

Physics Of Submicron Devices

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Author : David K Ferry
language : en
Publisher:
Release Date : 1991-11-01

Physics Of Submicron Devices written by David K Ferry and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991-11-01 with categories.

Hot Electrons In Semiconductors

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Author : N. Balkan
language : en
Publisher:
Release Date : 1998

Hot Electrons In Semiconductors written by N. Balkan and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Science categories.

Since the arrival of the transistor in 1947, research in hot electrons, like any field in semiconductor research, has grown at a stunning rate. From a physicist's point of view the understanding of hot electrons and their interactions with the lattice has always been a challenging problem of condensed matter physics. Recently, with the advent of novel fabrication techniques such as electron beam or plasma etching and the advanced growth techniques such as the molecular beam epitaxy (MBE) and metallo-organic chemical vapour deposition (MOCVD), it has become possible to fabricate semiconductor devices with sub-micron dimensions where the electrons are confined to two (quantum well), one (quantum wire) or zero (quantum dot) dimensions. In devices of such dimensions a few volts applied to the device result in the setting up of very high electric fields, hence a substantial heating of electrons. Thus electronic transport in the device becomes non- linear and can no longer be described using the simple equations of Ohm's law. The understanding of the operations of such devices, and the realisations of more advanced ones make it necessary to understand the dynamics of hot electrons. There is an obvious lack of good reference books on hot electrons in semiconductors. The few that exist either cover a very narrow field or are becoming quite outdated. This book is therefore written with the aim of filling the vacuum in an area where there is much demand for a comprehensive reference book. The book is intended for both established researchers and graduate students, and gives a complete account of the historical development of the subject, together with current research interests and future trends. The contributions are written by leading scientists in the field. They cover the physics of hot electrons in bulk and low dimensional device technology. The material is organised into subject area that can be classified broadly into five groups: (1)introduction and overview, (2)hot electron phonon interactions and the ultra-fast phenomena in bulk and two dimensional structures, (3)hot electrons in both long and short quantum wires and quantum dots, (4) hot electron tunnelling and hot electron transport in superlattices, and (5) novel devices based on hot electron transport. The chapters are grouped according to subject matter as far as possible. However, although there is much overlap of ideas and concepts, each chapter is essentially independent of the others.

Scientific And Technical Aerospace Reports

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Author :
language : en
Publisher:
Release Date : 1995-05

Scientific And Technical Aerospace Reports written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995-05 with Aeronautics categories.

Ultrashort Processes In Condensed Matter

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Author : Walter E. Bron
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Ultrashort Processes In Condensed Matter written by Walter E. Bron and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.

The Advanced Study Institute (AS!) considered a number offacets of the very rapidly advancing field of theoretical and experimental aspects of ultrashort processes in condensed matter. Common threads exist between a series of example cases. One major subgroup of topics involves the ultrashort dynamics of excitations of various "particles" produced through the interactions of condensed matter with ultrashort duration laser light. Examples ofthe excitations include electronic and hole carriers, electron-hole plasma, phonons, vibrons and rotons, two phonon states, and excitons. Experimentation on the dynamics of such excitations, are carried out in the bulk, at surfaces, in thin films, and in quantum wells. The dynamical steps which the excitations usually undergo include photo-excitation, local thermalization, particle-particle interaction, particle phonon interactions and eventual return to true thermal equilibrium. This ASI was organized to benefit particularly advanced graduate students, specifically, those near the end of their Ph.D. thesis projects, and also for postdoctoral scholars already active in the field. The overall organizational goal was centered around a set oftutorially based lectures intermingled with full scale discussion periods of equal time and importance as the lectures. The general discussion periods were designed to offer to the participants ample time to ask detailed questions and to make comments and contributions of their own. In order to complete the involvement of the participants a full length poster session was also held. A representative set of abstracts of these posters appear as an Appendix to the lectures.