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Numerical Simulation Of Submicron Semiconductor Devices


Numerical Simulation Of Submicron Semiconductor Devices
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Numerical Simulation Of Submicron Semiconductor Devices


Numerical Simulation Of Submicron Semiconductor Devices
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Author : Kazutaka Tomizawa
language : en
Publisher: Artech House on Demand
Release Date : 1993-01-01

Numerical Simulation Of Submicron Semiconductor Devices written by Kazutaka Tomizawa and has been published by Artech House on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993-01-01 with Mathematics categories.


Describes the basic theory of carrier transport, develops numerical algorithms used for transport problems or device simulations, and presents real-world examples of implementation.



Hierarchical Device Simulation


Hierarchical Device Simulation
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Author : Christoph Jungemann
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Hierarchical Device Simulation written by Christoph Jungemann and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.


This book summarizes the research of more than a decade. Its early motivation dates back to the eighties and to the memorable talks Dr. C. Moglestue (FHG Freiburg) gave on his Monte-Carlo solutions of the Boltzmann transport equation at the NASECODE conferences in Ireland. At that time numerical semiconductor device modeling basically implied the application of the drift-diffusion model. On the one hand, those talks clearly showed the potential of the Monte-Carlo model for an accurate description of many important transport issues that cannot adequately be addressed by the drift-diffusion approximation. On the other hand, they also clearly demonstrated that at that time only very few experts were able to extract useful results from a Monte-Carlo simulator. With this background, Monte-Carlo research activities were started in 1986 at the University of Aachen (RWTH Aachen), Germany. Different to many other Monte-Carlo research groups, the Monte-Carlo research in Aachen took place in an environment of active drift-diffusion and hydrodynamic model development.



Numerical Simulation


Numerical Simulation
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Author : Mykhaylo Andriychuk
language : en
Publisher: BoD – Books on Demand
Release Date : 2012-09-19

Numerical Simulation written by Mykhaylo Andriychuk and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-09-19 with Computers categories.


Numerical Simulation - from Theory to Industry is the edited book containing 25 chapters and divided into four parts. Part 1 is devoted to the background and novel advances of numerical simulation; second part contains simulation applications in the macro- and micro-electrodynamics. Part 3 includes contributions related to fluid dynamics in the natural environment and scientific applications; the last, fourth part is dedicated to simulation in the industrial areas, such as power engineering, metallurgy and building. Recent numerical techniques, as well as software the most accurate and advanced in treating the physical phenomena, are applied in order to explain the investigated processes in terms of numbers. Since the numerical simulation plays a key role in both theoretical and industrial research, this book related to simulation of many physical processes, will be useful for the pure research scientists, applied mathematicians, industrial engineers, and post-graduate students.



The Physics Of Submicron Semiconductor Devices


The Physics Of Submicron Semiconductor Devices
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Author : Harold L. Grubin
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-11

The Physics Of Submicron Semiconductor Devices written by Harold L. Grubin and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-11 with Technology & Engineering categories.


The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.



Rf And Microwave Semiconductor Device Handbook


Rf And Microwave Semiconductor Device Handbook
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Author : Mike Golio
language : en
Publisher: CRC Press
Release Date : 2017-12-19

Rf And Microwave Semiconductor Device Handbook written by Mike Golio and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.


Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.



Handbook Of Optoelectronic Device Modeling And Simulation


Handbook Of Optoelectronic Device Modeling And Simulation
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Author : Joachim Piprek
language : en
Publisher: CRC Press
Release Date : 2017-10-12

Handbook Of Optoelectronic Device Modeling And Simulation written by Joachim Piprek and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-10-12 with Science categories.


Optoelectronic devices are now ubiquitous in our daily lives, from light emitting diodes (LEDs) in many household appliances to solar cells for energy. This handbook shows how we can probe the underlying and highly complex physical processes using modern mathematical models and numerical simulation for optoelectronic device design, analysis, and performance optimization. It reflects the wide availability of powerful computers and advanced commercial software, which have opened the door for non-specialists to perform sophisticated modeling and simulation tasks. The chapters comprise the know-how of more than a hundred experts from all over the world. The handbook is an ideal starting point for beginners but also gives experienced researchers the opportunity to renew and broaden their knowledge in this expanding field.



Numerical Methods In Electromagnetics


Numerical Methods In Electromagnetics
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Author : W.H.A. SCHILDERS
language : en
Publisher: Elsevier
Release Date : 2005-04-04

Numerical Methods In Electromagnetics written by W.H.A. SCHILDERS and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-04-04 with Mathematics categories.


This special volume provides a broad overview and insight in the way numerical methods are being used to solve the wide variety of problems in the electronics industry. Furthermore its aim is to give researchers from other fields of application the opportunity to benefit from the results wich have been obtained in the electronics industry.* Complete survey of numerical methods used in the electronic industry* Each chapter is selfcontained* Presents state-of-the-art applications and methods* Internationally recognised authors



Semiconductor Modeling Techniques


Semiconductor Modeling Techniques
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Author : Xavier Marie
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-06-26

Semiconductor Modeling Techniques written by Xavier Marie and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-06-26 with Technology & Engineering categories.


This book describes the key theoretical techniques for semiconductor research to quantitatively calculate and simulate the properties. It presents particular techniques to study novel semiconductor materials, such as 2D heterostructures, quantum wires, quantum dots and nitrogen containing III-V alloys. The book is aimed primarily at newcomers working in the field of semiconductor physics to give guidance in theory and experiment. The theoretical techniques for electronic and optoelectronic devices are explained in detail.



Applications Of Silicon Germanium Heterostructure Devices


Applications Of Silicon Germanium Heterostructure Devices
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Author : C.K Maiti
language : en
Publisher: CRC Press
Release Date : 2001-07-20

Applications Of Silicon Germanium Heterostructure Devices written by C.K Maiti and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001-07-20 with Science categories.


The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st



Modelling Of Interface Carrier Transport For Device Simulation


Modelling Of Interface Carrier Transport For Device Simulation
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Author : Dietmar Schroeder
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-03-09

Modelling Of Interface Carrier Transport For Device Simulation written by Dietmar Schroeder and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-09 with Technology & Engineering categories.


This book represents a comprehensive text devoted to charge transport at semiconductor interfaces and its consideration in device simulation by interface and boundary conditions. It contains a broad review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. Particular emphasis is put on the consistent deriva tion of interface or boundary conditions for semiconductor device simula tion. The book is of interest with respect to a wide range of electronic engineering activities, as process design, device design, process character ization, research in microelectronics, or device simulator development. It is also useful for students and lecturers in courses of electronic engineering, and it supplements the library of technically oriented solid-state physicists. The deepest roots of this book date back to the mid-seventies. Being a student of electrical engineering, who was exposed for the first time to the material of semiconductor device electronics, I was puzzled by noticing that much emphasis was put on a thorough introduction and understand ing of the basic semiconductor equations, while the boundary conditions for these equations received very much less attention. Until today on many occasions one could get the impression that boundary conditions are unimportant accessories; they do not stand on their own besides the bulk transport equations, although it is clear that they are of course a necessary complement of these.