Modelling Of Interface Carrier Transport For Device Simulation

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Modelling Of Interface Carrier Transport For Device Simulation

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Author : Dietmar Schroeder
language : en
Publisher: Springer
Release Date : 2012-11-01

Modelling Of Interface Carrier Transport For Device Simulation written by Dietmar Schroeder and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-11-01 with Technology & Engineering categories.

This book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. It combines a review of existing interface charge transport models with original developments, and introduces a unified representation of charge transport at semiconductor interfaces.

Modelling Of Interface Carrier Transport For Device Simulation

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Author : Dietmar Schroeder
language : en
Publisher: Springer Science & Business Media
Release Date : 1994

Modelling Of Interface Carrier Transport For Device Simulation written by Dietmar Schroeder and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with Science categories.

1 Introduction.- 2 Charge Transport in the Volume.- 3 General Electronic Model of the Interface.- 4 Charge Transport Across the Interface.- 5 Semiconductor-Insulator Interface.- 6 Metal-Semiconductor Contact.- 7 Semiconductor Heterojunction.- 8 MOSFET Gate.- 9 Discretization.- Appendices.- A Transformation of k-Vectors.- B Conservation of Transverse Momentum.- D Approximation of Surface Mobility.- Bibliography 209 Index.

Modeling Simulation And Optimization Of Integrated Circuits

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Author : K. Antreich
language : en
Publisher: Birkhäuser
Release Date : 2012-12-06

Modeling Simulation And Optimization Of Integrated Circuits written by K. Antreich and has been published by Birkhäuser this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Mathematics categories.

In November 2001 the Mathematical Research Center at Oberwolfach, Germany, hosted the third Conference on Mathematical Models and Numerical Simulation in Electronic Industry. It brought together researchers in mathematics, electrical engineering and scientists working in industry. The contributions to this volume try to bridge the gap between basic and applied mathematics, research in electrical engineering and the needs of industry.

Advanced Device Modeling And Simulation

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Author : Tibor Grasser
language : en
Publisher: World Scientific
Release Date : 2003

Advanced Device Modeling And Simulation written by Tibor Grasser and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with Technology & Engineering categories.

Microelectronics is one of the most rapidly changing scientific fields today. The tendency to shrink devices as far as possible results in extremely small devices which can no longer be described using simple analytical models. This book covers various aspects of advanced device modeling and simulation. As such it presents extensive reviews and original research by outstanding scientists. The bulk of the book is concerned with the theory of classical and quantum-mechanical transport modeling, based on macroscopic, spherical harmonics and Monte Carlo methods.

Introduction To Semiconductor Device Modelling

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Author : Christopher M. Snowden
language : en
Publisher: World Scientific
Release Date : 1998

Introduction To Semiconductor Device Modelling written by Christopher M. Snowden and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Science categories.

This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.

Handbook Of Optoelectronic Device Modeling And Simulation

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Author : Joachim Piprek
language : en
Publisher: CRC Press
Release Date : 2017-10-10

Handbook Of Optoelectronic Device Modeling And Simulation written by Joachim Piprek and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-10-10 with Science categories.

Optoelectronic devices are now ubiquitous in our daily lives, from light emitting diodes (LEDs) in many household appliances to solar cells for energy. This handbook shows how we can probe the underlying and highly complex physical processes using modern mathematical models and numerical simulation for optoelectronic device design, analysis, and performance optimization. It reflects the wide availability of powerful computers and advanced commercial software, which have opened the door for non-specialists to perform sophisticated modeling and simulation tasks. The chapters comprise the know-how of more than a hundred experts from all over the world. The handbook is an ideal starting point for beginners but also gives experienced researchers the opportunity to renew and broaden their knowledge in this expanding field.

Hierarchical Device Simulation

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Author : Christoph Jungemann
language : en
Publisher: Springer Science & Business Media
Release Date : 2003-06-05

Hierarchical Device Simulation written by Christoph Jungemann and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-06-05 with Technology & Engineering categories.

This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.

Analysis And Simulation Of Heterostructure Devices

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Author : Vassil Palankovski
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Analysis And Simulation Of Heterostructure Devices written by Vassil Palankovski and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.

Communication and information systems are subject to rapid and highly so phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis tors (HEMTs), are among the fastest and most advanced high-frequency devices. They satisfy the requirements for low power consumption, medium integration, low cost in large quantities, and high-speed operation capabilities in circuits. In the very high-frequency range, cut-off frequencies up to 500 GHz [557] have been reported on the device level. HEMTs and HBTs are very suitable for high efficiency power amplifiers at 900 MHz as well as for data rates higher than 100 Gbitfs for long-range communication and thus cover a broad range of appli cations. To cope with explosive development costs and the competition of today's semicon ductor industry, Technology Computer-Aided Design (TCAD) methodologies are used extensively in development and production. As of 2003, III-V semiconductor HEMT and HBT micrometer and millimeter-wave integrated circuits (MICs and MMICs) are available on six-inch GaAs wafers. SiGe HBT circuits, as part of the CMOS technology on eight-inch wafers, are in volume production. Simulation tools for technology, devices, and circuits reduce expensive technological efforts. This book focuses on the application of simulation software to heterostructure devices with respect to industrial applications. In particular, a detailed discussion of physical modeling for a great variety of materials is presented.

Simulation Of Semiconductor Devices And Processes

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Author : Heiner Ryssel
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Simulation Of Semiconductor Devices And Processes written by Heiner Ryssel and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Computers categories.

SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.

Mos Devices For Low Voltage And Low Energy Applications

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Author : Yasuhisa Omura
language : en
Publisher: John Wiley & Sons
Release Date : 2017-02-28

Mos Devices For Low Voltage And Low Energy Applications written by Yasuhisa Omura and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-02-28 with Technology & Engineering categories.

Helps readers understand the physics behind MOS devices for low-voltage and low-energy applications Based on timely published and unpublished work written by expert authors Discusses various promising MOS devices applicable to low-energy environmental and biomedical uses Describes the physical effects (quantum, tunneling) of MOS devices Demonstrates the performance of devices, helping readers to choose right devices applicable to an industrial or consumer environment Addresses some Ge-based devices and other compound-material-based devices for high-frequency applications and future development of high performance devices. "Seemingly innocuous everyday devices such as smartphones, tablets and services such as on-line gaming or internet keyword searches consume vast amounts of energy. Even when in standby mode, all these devices consume energy. The upcoming 'Internet of Things' (IoT) is expected to deploy 60 billion electronic devices spread out in our homes, cars and cities. Britain is already consuming up to 16 per cent of all its power through internet use and this rate is doubling every four years. According to The UK's Daily Mail May (2015), if usage rates continue, all of Britain's power supply could be consumed by internet use in just 20 years. In 2013, U.S. data centers consumed an estimated 91 billion kilowatt-hours of electricity, corresponding to the power generated by seventeen 1000-megawatt nuclear power plants. Data center electricity consumption is projected to increase to roughly 140 billion kilowatt-hours annually by 2020, the equivalent annual output of 50 nuclear power plants." —Natural Resources Defense Council, USA, Feb. 2015 All these examples stress the urgent need for developing electronic devices that consume as little energy as possible. The book “MOS Devices for Low-Voltage and Low-Energy Applications” explores the different transistor options that can be utilized to achieve that goal. It describes in detail the physics and performance of transistors that can be operated at low voltage and consume little power, such as subthreshold operation in bulk transistors, fully depleted SOI devices, tunnel FETs, multigate and gate-all-around MOSFETs. Examples of low-energy circuits making use of these devices are given as well. "The book MOS Devices for Low-Voltage and Low-Energy Applications is a good reference for graduate students, researchers, semiconductor and electrical engineers who will design the electronic systems of tomorrow." —Dr. Jean-Pierre Colinge, Taiwan Semiconductor Manufacturing Company (TSMC) "The authors present a creative way to show how different MOS devices can be used for low-voltage and low-power applications. They start with Bulk MOSFET, following with SOI MOSFET, FinFET, gate-all-around MOSFET, Tunnel-FET and others. It is presented the physics behind the devices, models, simulations, experimental results and applications. This book is interesting for researchers, graduate and undergraduate students. The low-energy field is an important topic for integrated circuits in the future and none can stay out of this." —Prof. Joao A. Martino, University of Sao Paulo, Brazil