Advanced Mos Device Physics
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Advanced Mos Device Physics
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Author : Norman Einspruch
language : en
Publisher: Elsevier
Release Date : 2012-12-02
Advanced Mos Device Physics written by Norman Einspruch and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-02 with Technology & Engineering categories.
VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.
Vlsi Electronics Microstructure Science
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Author : Norman G. Einspruch
language : en
Publisher:
Release Date : 1989
Vlsi Electronics Microstructure Science written by Norman G. Einspruch and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1989 with Metal oxide semiconductors categories.
Vlsi Electronics Advanced Mos Device Physics
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Author : Norman G. Einspruch
language : en
Publisher:
Release Date : 1989
Vlsi Electronics Advanced Mos Device Physics written by Norman G. Einspruch and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1989 with Integrated circuits categories.
Low Frequency Noise In Advanced Mos Devices
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Author : Martin Haartman
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-08-23
Low Frequency Noise In Advanced Mos Devices written by Martin Haartman and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-08-23 with Technology & Engineering categories.
This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.
Physics Of Semiconductor Devices
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Author : J.-P. Colinge
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-05-08
Physics Of Semiconductor Devices written by J.-P. Colinge and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-05-08 with Technology & Engineering categories.
Physics of Semiconductor Devices covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described. Physics of Semiconductor Devices contains a list of problems that can be used as homework assignments or can be solved in class to exemplify the theory. Many of these problems make use of Matlab and are aimed at illustrating theoretical concepts in a graphical manner.
High Voltage Devices And Circuits In Standard Cmos Technologies
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Author : Hussein Ballan
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-03-14
High Voltage Devices And Circuits In Standard Cmos Technologies written by Hussein Ballan and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-14 with Technology & Engineering categories.
Standard voltages used in today's ICs may vary from about 1.3V to more than 100V, depending on the technology and the application. High voltage is therefore a relative notion. High Voltage Devices and Circuits in Standard CMOS Technologies is mainly focused on standard CMOS technologies, where high voltage (HV) is defined as any voltage higher than the nominal (low) voltage, i.e. 5V, 3.3V, or even lower. In this standard CMOS environment, IC designers are more and more frequently confronted with HV problems, particularly at the I/O level of the circuit. In the first group of applications, a large range of industrial or consumer circuits either require HV driving capabilities, or are supposed to work in a high-voltage environment. This includes ultrasonic drivers, flat panel displays, robotics, automotive, etc. On the other hand, in the emerging field of integrated microsystems, MEMS actuators mainly make use of electrostatic forces involving voltages in the typical range of 30 to 60V. Last but not least, with the advent of deep sub-micron and/or low-power technologies, the operating voltage tends towards levels ranging from 1V to 2.5V, while the interface needs to be compatible with higher voltages, such as 5V. For all these categories of applications, it is usually preferable to perform most of the signal processing at low voltage, while the resulting output rises to a higher voltage level. Solving this problem requires some special actions at three levels: technology, circuit design and layout. High Voltage Devices and Circuits in Standard CMOS Technologies addresses these topics in a clear and organized way. The theoretical background is supported by practical information and design examples. It is an invaluable reference for researchers and professionals in both the design and device communities.
Advanced Mosfet Devices For Vlsi Memory And Logic
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Author : Hsing-Jen Wann
language : en
Publisher:
Release Date : 1996
Advanced Mosfet Devices For Vlsi Memory And Logic written by Hsing-Jen Wann and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with categories.
Hot Carrier Effects In Mos Devices
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Author : Eiji Takeda
language : en
Publisher: Elsevier
Release Date : 1995-11-28
Hot Carrier Effects In Mos Devices written by Eiji Takeda and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995-11-28 with Technology & Engineering categories.
The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. - Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book - The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field - The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions - Provides the most complete review of device degradation mechanisms as well as drain engineering methods - Contains the most extensive reference list on the subject
Cmos Vlsi Engineering
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Author : James B. Kuo
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-17
Cmos Vlsi Engineering written by James B. Kuo and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-17 with Technology & Engineering categories.
Silicon-On-Insulator (SOI) CMOS technology has been regarded as another major technology for VLSI in addition to bulk CMOS technology. Owing to the buried oxide structure, SOI technology offers superior CMOS devices with higher speed, high density, and reduced second order effects for deep-submicron low-voltage, low-power VLSI circuits applications. In addition to VLSI applications, and because of its outstanding properties, SOI technology has been used to realize communication circuits, microwave devices, BICMOS devices, and even fiber optics applications. CMOS VLSI Engineering: Silicon-On-Insulator addresses three key factors in engineering SOI CMOS VLSI - processing technology, device modelling, and circuit designs are all covered with their mutual interactions. Starting from the SOI CMOS processing technology and the SOI CMOS digital and analog circuits, behaviors of the SOI CMOS devices are presented, followed by a CAD program, ST-SPICE, which incorporates models for deep-submicron fully-depleted mesa-isolated SOI CMOS devices and special purpose SOI devices including polysilicon TFTs. CMOS VLSI Engineering: Silicon-On-Insulator is written for undergraduate senior students and first-year graduate students interested in CMOS VLSI. It will also be suitable for electrical engineering professionals interested in microelectronics.
Vlsi Electronics Advanced Mos Device Physics
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Author : Norman G. Einspruch
language : en
Publisher:
Release Date : 1981
Vlsi Electronics Advanced Mos Device Physics written by Norman G. Einspruch and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1981 with Integrated circuits categories.