Advanced Mos Devices
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Advanced Mos Devices
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Author : Dieter K. Schroder
language : en
Publisher: Addison Wesley Publishing Company
Release Date : 1987
Advanced Mos Devices written by Dieter K. Schroder and has been published by Addison Wesley Publishing Company this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987 with Computers categories.
Pulls together all the relevant concepts in this field. Volume 5 builds upon the material previously covered in the series and contains references for further reading. For advanced students, industrial researchers and E.E. professionals.
Advanced Mos Device Physics
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Author : Norman Einspruch
language : en
Publisher: Elsevier
Release Date : 2012-12-02
Advanced Mos Device Physics written by Norman Einspruch and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-02 with Technology & Engineering categories.
VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.
Advanced Mos Devices And Their Circuit Applications
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Author : Ankur Beohar
language : en
Publisher: CRC Press
Release Date : 2024-01-19
Advanced Mos Devices And Their Circuit Applications written by Ankur Beohar and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-01-19 with Technology & Engineering categories.
This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach. The book: • Discusses advanced MOS devices and their circuit design for energy- efficient systems on chips (SoCs). • Covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low-power applications. • Examines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low-power MOS transistors. • Includes research problem statements with specifications and commercially available industry data in the appendix. • Presents Verilog-A model-based simulations for circuit analysis. The volume provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate students, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology.
Low Frequency Noise In Advanced Mos Devices
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Author : Martin Haartman
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-08-23
Low Frequency Noise In Advanced Mos Devices written by Martin Haartman and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-08-23 with Technology & Engineering categories.
This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.
Low Frequency Noise In Advanced Mos Devices
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Author : Martin von Haartman
language : en
Publisher: Springer
Release Date : 2009-09-03
Low Frequency Noise In Advanced Mos Devices written by Martin von Haartman and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-09-03 with Technology & Engineering categories.
This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.
Vlsi Electronics Microstructure Science
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Author : Norman G. Einspruch
language : en
Publisher:
Release Date : 1989
Vlsi Electronics Microstructure Science written by Norman G. Einspruch and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1989 with Metal oxide semiconductors categories.
Modular Series On Solid State Devices
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Author : Robert F. Pierret
language : en
Publisher:
Release Date : 1983
Modular Series On Solid State Devices written by Robert F. Pierret and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1983 with Semiconductors categories.
Vlsi Electronics Advanced Mos Device Physics
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Author : Norman G. Einspruch
language : en
Publisher:
Release Date : 1981
Vlsi Electronics Advanced Mos Device Physics written by Norman G. Einspruch and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1981 with Integrated circuits categories.
Advanced Cmos Process Technology
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Author : J Pimbley
language : en
Publisher: Elsevier
Release Date : 2012-12-02
Advanced Cmos Process Technology written by J Pimbley and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-02 with Technology & Engineering categories.
Advanced CMOS Process Technology is part of the VLSI Electronics Microstructure Science series. The main topic of this book is complementary metal-oxide semiconductor or CMOS technology, which plays a significant part in the electronics systems. The topics covered in this book range from metallization, isolation techniques, reliability, and yield. The volume begins with an introductory chapter that discusses the microelectronics revolution of the 20th century. Then Chapter 2 puts focus on the CMOS devices and circuit background, discussing CMOS capacitors and field effect transistors. Metallization topics and concepts are covered in Chapter 3, while isolation techniques are tackled in Chapter 4. Long-term reliability of CMOS is the topic covered in Chapter 5. Finally, the ability of semiconductor technology to yield circuits is discussed in Chapter 6. The book is particularly addressed to engineers, scientists, and technical managers.
High Frequency Techniques For Advanced Mos Device Characterization
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Author :
language : en
Publisher:
Release Date : 2008
High Frequency Techniques For Advanced Mos Device Characterization written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Metal oxide semiconductors categories.
Rapid advances in the semiconductor industry have led to the proliferation of electric devices and information technology (IT). Integrated circuits(IC) based upon silicon MOSFET's have been used in virtually every electronic device produced today. The competitiveness of this huge market urges an increased device performance with lower cost. Over the past three decades, it is fulfilled by reducing transistor gate lengths and oxide thickness with each new generation of manufacturing technology. The leading edge CMOS technology is currently at the 45nm node with physical gate length at 18 nm and an equivalent gate oxide thickness (EOT) of 0.9 nm. However, as the device is miniaturized into the nanometer-scale regime nowadays, some challenges abound. Some challenges are new, some are just getting tougher and most of them will continue to become even more difficult to deal with for future generations. It is the world-wide effort to meet these challenges for sustaining the rapid growth of the industry. In this thesis, we will address a few of these challenges and offer some new approaches to get around them. Specifically, we introduce a new measurement technique to solve the precision problem in C-V measurement based on Time domain Reflectrometry(TDR). We also use the combination of experiment and theory to resolve the defect depth-profiling ambiguity associated with charge pumping measurement. Moreover, we find a new mode in transistor degradation that will become much more serious as the transistor size shrinks further. All these results represent a major and important advance which is also timely to the IC industry.