Alsb Inas Alsb Pnp Double Heterojunction Bipolar Transistors
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Alsb Inas Alsb Pnp Double Heterojunction Bipolar Transistors
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Author : John Joseph Pekarik
language : en
Publisher:
Release Date : 1993
Alsb Inas Alsb Pnp Double Heterojunction Bipolar Transistors written by John Joseph Pekarik and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993 with categories.
Current Trends In Heterojunction Bipolar Transistors
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Author : M F Chang
language : en
Publisher: World Scientific
Release Date : 1996-01-29
Current Trends In Heterojunction Bipolar Transistors written by M F Chang and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996-01-29 with Technology & Engineering categories.
Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
The Aluminum Free P N P Ingaasn Double Heterojunction Bipolar Transistors
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Author :
language : en
Publisher:
Release Date : 2001
The Aluminum Free P N P Ingaasn Double Heterojunction Bipolar Transistors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with categories.
The authors have demonstrated an aluminum-free P-n-P GaAs/InGaAsN/GaAs double heterojunction bipolar transistor (DHBT). The device has a low turn-on voltage (V[sub ON]) that is 0.27 V lower than in a comparable P-n-p AlGaAs/GaAs HBT. The device shows near-ideal D.C. characteristics with a current gain ([beta]) greater than 45. The high-speed performance of the device are comparable to a similar P-n-p AlGaAs/GaAs HBT, with f[sub T] and f[sub MAX] values of 12 GHz and 10 GHz, respectively. This device is very suitable for low-power complementary HBT circuit applications, while the aluminum-free emitter structure eliminates issues typically associated with AlGaAs.
Design Fabrication And Characterization Of Inas Alsb Heterojunction Field Effect Transistors
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Author : James David Werking
language : en
Publisher:
Release Date : 1993
Design Fabrication And Characterization Of Inas Alsb Heterojunction Field Effect Transistors written by James David Werking and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993 with categories.
Inas Alsb Heterostructure Field Effect Transistors
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Author : Martin William Dvorak
language : en
Publisher:
Release Date : 1997
Inas Alsb Heterostructure Field Effect Transistors written by Martin William Dvorak and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with categories.
Characteristics Of Novel Ingaasn Double Heterojunction Bipolar Transistors
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Author :
language : en
Publisher:
Release Date : 2000
Characteristics Of Novel Ingaasn Double Heterojunction Bipolar Transistors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.
Dissertation Abstracts International
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Author :
language : en
Publisher:
Release Date : 1993
Dissertation Abstracts International written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993 with Dissertations, Academic categories.
Algaas Ingaasn Gaas Pnp Double Heterojunction Bipolar Transistor
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Author :
language : en
Publisher:
Release Date : 2000
Algaas Ingaasn Gaas Pnp Double Heterojunction Bipolar Transistor written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.
The authors have demonstrated a functional MOCVD-grown AlGaAs/InGaAsN/GaAsPnP DHBT that is lattice matched to GaAs and has a peak current gain ([beta]) of 25. Because of the smaller bandgap (E{sub g}=1.20eV)of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. The BV{sub CEO} is 12 V, consistent with its GaAs collector thickness and doping level.
American Doctoral Dissertations
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Author :
language : en
Publisher:
Release Date : 1992
American Doctoral Dissertations written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992 with Dissertation abstracts categories.
Physics Briefs
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Author :
language : en
Publisher:
Release Date : 1992
Physics Briefs written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992 with Physics categories.