Analysis And Simulation Of Semiconductor Devices
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Analysis And Simulation Of Semiconductor Devices
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Author : S. Selberherr
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Analysis And Simulation Of Semiconductor Devices written by S. Selberherr and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.
Analysis And Simulation Of Semiconductor Devices
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Author : Siegfried Selberherr
language : en
Publisher:
Release Date : 1984
Analysis And Simulation Of Semiconductor Devices written by Siegfried Selberherr and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1984 with Semiconductors categories.
Semiconductor Device Physics And Simulation
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Author : J.S. Yuan
language : en
Publisher: Springer Science & Business Media
Release Date : 1998-05-31
Semiconductor Device Physics And Simulation written by J.S. Yuan and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-05-31 with Technology & Engineering categories.
The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.
Analysis And Simulation Of Heterostructure Devices
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Author : Vassil Palankovski
language : en
Publisher: Springer Science & Business Media
Release Date : 2004
Analysis And Simulation Of Heterostructure Devices written by Vassil Palankovski and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Computers categories.
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Simulation Of Semiconductor Devices And Processes
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Author : Siegfried Selberherr
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Simulation Of Semiconductor Devices And Processes written by Siegfried Selberherr and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Computers categories.
The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.
Simulation Of Semiconductor Devices And Processes Vol 5
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Author : Siegfried Selberherr
language : en
Publisher: Springer
Release Date : 1993
Simulation Of Semiconductor Devices And Processes Vol 5 written by Siegfried Selberherr and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993 with Science categories.
Introduction To Semiconductor Device Modelling
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Author : Christopher M. Snowden
language : en
Publisher: World Scientific
Release Date : 1998
Introduction To Semiconductor Device Modelling written by Christopher M. Snowden and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Science categories.
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
3d Tcad Simulation For Semiconductor Processes Devices And Optoelectronics
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Author : Simon Li
language : en
Publisher: Springer Science & Business Media
Release Date : 2011-10-01
3d Tcad Simulation For Semiconductor Processes Devices And Optoelectronics written by Simon Li and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-10-01 with Technology & Engineering categories.
Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD. This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D. It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations. Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc.
The Stationary Semiconductor Device Equations
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Author : P.A. Markowich
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-03-09
The Stationary Semiconductor Device Equations written by P.A. Markowich and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-09 with Technology & Engineering categories.
In the last two decades semiconductor device simulation has become a research area, which thrives on a cooperation of physicists, electrical engineers and mathe maticians. In this book the static semiconductor device problem is presented and analysed from an applied mathematician's point of view. I shall derive the device equations - as obtained for the first time by Van Roosbroeck in 1950 - from physical principles, present a mathematical analysis, discuss their numerical solu tion by discretisation techniques and report on selected device simulation runs. To me personally the most fascinating aspect of mathematical device analysis is that an interplay of abstract mathematics, perturbation theory, numerical analysis and device physics is prompting the design and development of new technology. I very much hope to convey to the reader the importance of applied mathematics for technological progress. Each chapter of this book is designed to be as selfcontained as possible, however, the mathematical analysis of the device problem requires tools which cannot be presented completely here. Those readers who are not interested in the mathemati cal methodology and rigor can extract the desired information by simply ignoring details and proofs of theorems. Also, at the beginning of each chapter I refer to textbooks which introduce the interested reader to the required mathematical concepts.
Optoelectronic Devices
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Author : Joachim Piprek
language : en
Publisher: Springer Science & Business Media
Release Date : 2005
Optoelectronic Devices written by Joachim Piprek and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Computers categories.
The subject of this book is optoelectronic devices which are semiconductors that employ the interaction of electrons and photons in order to transform electrical into optical signals and vice versa. Chapters provide an introduction to the physics and themain equations, as well as the material parameters essential for realistic simulations.