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Atomic Diffusion In Iii V Semiconductors


Atomic Diffusion In Iii V Semiconductors
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Atomic Diffusion In Iii V Semiconductors


Atomic Diffusion In Iii V Semiconductors
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Author : Brian Tuck
language : en
Publisher: CRC Press
Release Date : 2021-05-31

Atomic Diffusion In Iii V Semiconductors written by Brian Tuck and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-05-31 with Science categories.


III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so in the future. They have principally contributed to two technologies: microwave devices and optoelectronics. Recent advances in the production of thin layers have made possible a whole new range of devices based on multi-quantum wells. The heat treatments used in the manufacture of semiconductor devices means that some diffusion must take place. A good understanding of diffusion processes is therefore essential to maintain control over the technology. Atomic Diffusion in III-V Semiconductors presents a lucid account of the experimental work that has been carried out on diffusion in III-Vs and explores the advanced models that explain the results. A review of the III-V group of semiconductors outlines the special properties that make them so attractive for some types of devices. Discussion of the basic elements of diffusion in semiconductors provides the theory necessary to understand the subject in depth, and the book gives hints on how to assess the published data. Chapters on diffusion of shallow donors, shallow acceptors, transition elements, and very fast-diffusing elements provide a critical review of published works. The book also presents the neglected subject of self-diffusion, including a section on superlattices. Atomic Diffusion in III-V Semiconductors will be of interest to research workers in semiconductor science and technology, and to postgraduate students in physics, electronics, and materials science.



Atomic Diffusion In Semiconductors


Atomic Diffusion In Semiconductors
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Author : D. Shaw
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Atomic Diffusion In Semiconductors written by D. Shaw and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.


The diffusion or migration of atoms in matter, of whatever form, is a basic consequence of the existence of atoms. In metals, atomic diffusion has a well established position of importance as it is recognized that there are few metallurgical processes which do not embody the diffusion of one or more of the constituents. As regards semiconductors any thermal annealing treatment involves atomic diffusion. In semiconductor technology diffusion processes provide a vital and basic means of fabricating doped structures. Notwithstanding the importance of diffusion in the preparative processes of semiconductor structures and samples, the diffusion based aspects have acquired an empirical outlook verging almost on alchemy. The first attempt to present a systematic account of semiconductor diffusion processes was made by Boltaks [11 in 1961. During the decade since Boltaks' book appeared much work germane to understanding the atomic mechanisms responsible for diffusion in semiconductors has been published. The object of the present book is to give an account of, and to consolidate, present knowledge of semiconductor diffusion in terms of basic concepts of atomic migration in crystalline lattices. To this end, exhaustive compilations of empirical data have been avoided as these are available elsewhere [2, 31 : attention has been limited to considering evidence capable of yielding insight into the physical processes concerned in atomic diffusion.



Atomic Diffusion In Iii V Semiconductors


Atomic Diffusion In Iii V Semiconductors
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Author : Brian Tuck
language : en
Publisher: CRC Press
Release Date : 2021-05-30

Atomic Diffusion In Iii V Semiconductors written by Brian Tuck and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-05-30 with Science categories.


III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so in the future. They have principally contributed to two technologies: microwave devices and optoelectronics. Recent advances in the production of thin layers have made possible a whole new range of devices based on multi-quantum wells. The heat treatments used in the manufacture of semiconductor devices means that some diffusion must take place. A good understanding of diffusion processes is therefore essential to maintain control over the technology. Atomic Diffusion in III-V Semiconductors presents a lucid account of the experimental work that has been carried out on diffusion in III-Vs and explores the advanced models that explain the results. A review of the III-V group of semiconductors outlines the special properties that make them so attractive for some types of devices. Discussion of the basic elements of diffusion in semiconductors provides the theory necessary to understand the subject in depth, and the book gives hints on how to assess the published data. Chapters on diffusion of shallow donors, shallow acceptors, transition elements, and very fast-diffusing elements provide a critical review of published works. The book also presents the neglected subject of self-diffusion, including a section on superlattices. Atomic Diffusion in III-V Semiconductors will be of interest to research workers in semiconductor science and technology, and to postgraduate students in physics, electronics, and materials science.



Atomic Diffusion In Semiconductor Structures


Atomic Diffusion In Semiconductor Structures
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Author : G. B. Abdullaev
language : en
Publisher: Routledge
Release Date : 1987

Atomic Diffusion In Semiconductor Structures written by G. B. Abdullaev and has been published by Routledge this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987 with Diffusion categories.




Atomic Diffusion In Semiconductors


Atomic Diffusion In Semiconductors
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Author : D. Shaw
language : en
Publisher:
Release Date : 1973-05-01

Atomic Diffusion In Semiconductors written by D. Shaw and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1973-05-01 with categories.




Physics And Chemistry Of Iii V Compound Semiconductor Interfaces


Physics And Chemistry Of Iii V Compound Semiconductor Interfaces
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Author : Carl Wilmsen
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-06-29

Physics And Chemistry Of Iii V Compound Semiconductor Interfaces written by Carl Wilmsen and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-06-29 with Science categories.


The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.



Iii V Semiconductor Materials And Devices


Iii V Semiconductor Materials And Devices
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Author : R.J. Malik
language : en
Publisher: Elsevier
Release Date : 2012-12-02

Iii V Semiconductor Materials And Devices written by R.J. Malik and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-02 with Technology & Engineering categories.


The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.



Atom Diffusion And Impurity Induced Layer Disordering In Quantum Well Iii V Semiconductor Heterostructures


Atom Diffusion And Impurity Induced Layer Disordering In Quantum Well Iii V Semiconductor Heterostructures
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Author : Dennis Glenn Deppe
language : en
Publisher:
Release Date : 1989

Atom Diffusion And Impurity Induced Layer Disordering In Quantum Well Iii V Semiconductor Heterostructures written by Dennis Glenn Deppe and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1989 with categories.


The process of impurity-induced layer disordering (IILD), or layer intermixing, in Al$sb{rm x}$Ga$sb{rm 1-x}$As-GaAs quantum-well heterostructures (QWHs) and superlattices (SLs), and in related III-V quantum well heterostructures, has developed extensively. A large variety of experimental data on IILD are discussed and provide newer information and further perspective on crystal self-diffusion, impurity diffusion, and also the important defect mechanisms that control diffusion in Al$sb{rm x}$Ga$sb{rm 1-x}$As-GaAs, and in related III-V semiconductors. Based on the behavior of Column III vacancies and Column III interstitials, models for the crystal self-diffusion and impurity diffusion that describe IILD are presented and shown to be consistent with available experimental data. We mention that it may be possible to realize even more advanced device structures using IILD, for example, quantum well wires or quantum well boxes. These will require an even greater understanding of the mechanisms (crystal processes) that control IILD, as well as require more refined methods of pattern definition, masking procedures, and crystal processing.



Introduction To Diffusion In Semiconductors


Introduction To Diffusion In Semiconductors
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Author : Brian Tuck
language : en
Publisher:
Release Date : 1974

Introduction To Diffusion In Semiconductors written by Brian Tuck and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1974 with Technology & Engineering categories.




Atomic Diffusion In Semiconductor Structures


Atomic Diffusion In Semiconductor Structures
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Author : Gasan Mamed Bagir ogly Abdullaev
language : en
Publisher: Gordon & Breach Science Pub
Release Date : 1987-06-01

Atomic Diffusion In Semiconductor Structures written by Gasan Mamed Bagir ogly Abdullaev and has been published by Gordon & Breach Science Pub this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987-06-01 with Science categories.