Atomic Diffusion In Semiconductor Structures

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Atomic Diffusion In Semiconductor Structures

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Author : G. B. Abdullaev
language : en
Publisher: Routledge
Release Date : 1987

Atomic Diffusion In Semiconductor Structures written by G. B. Abdullaev and has been published by Routledge this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987 with Diffusion categories.

Atomic Diffusion In Semiconductors

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Author : D. Shaw
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Atomic Diffusion In Semiconductors written by D. Shaw and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.

The diffusion or migration of atoms in matter, of whatever form, is a basic consequence of the existence of atoms. In metals, atomic diffusion has a well established position of importance as it is recognized that there are few metallurgical processes which do not embody the diffusion of one or more of the constituents. As regards semiconductors any thermal annealing treatment involves atomic diffusion. In semiconductor technology diffusion processes provide a vital and basic means of fabricating doped structures. Notwithstanding the importance of diffusion in the preparative processes of semiconductor structures and samples, the diffusion based aspects have acquired an empirical outlook verging almost on alchemy. The first attempt to present a systematic account of semiconductor diffusion processes was made by Boltaks [11 in 1961. During the decade since Boltaks' book appeared much work germane to understanding the atomic mechanisms responsible for diffusion in semiconductors has been published. The object of the present book is to give an account of, and to consolidate, present knowledge of semiconductor diffusion in terms of basic concepts of atomic migration in crystalline lattices. To this end, exhaustive compilations of empirical data have been avoided as these are available elsewhere [2, 31 : attention has been limited to considering evidence capable of yielding insight into the physical processes concerned in atomic diffusion.

Atomic Diffusion In Semiconductor Structures

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Author : Gasan Mamed Bagir ogly Abdullaev
language : en
Publisher: Gordon & Breach Science Pub
Release Date : 1987-06-01

Atomic Diffusion In Semiconductor Structures written by Gasan Mamed Bagir ogly Abdullaev and has been published by Gordon & Breach Science Pub this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987-06-01 with Science categories.

Atomic Diffusion In Iii V Semiconductors

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Author : Brian Tuck
language : en
Publisher: CRC Press
Release Date : 2021-05-31

Atomic Diffusion In Iii V Semiconductors written by Brian Tuck and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-05-31 with Science categories.

III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so in the future. They have principally contributed to two technologies: microwave devices and optoelectronics. Recent advances in the production of thin layers have made possible a whole new range of devices based on multi-quantum wells. The heat treatments used in the manufacture of semiconductor devices means that some diffusion must take place. A good understanding of diffusion processes is therefore essential to maintain control over the technology. Atomic Diffusion in III-V Semiconductors presents a lucid account of the experimental work that has been carried out on diffusion in III-Vs and explores the advanced models that explain the results. A review of the III-V group of semiconductors outlines the special properties that make them so attractive for some types of devices. Discussion of the basic elements of diffusion in semiconductors provides the theory necessary to understand the subject in depth, and the book gives hints on how to assess the published data. Chapters on diffusion of shallow donors, shallow acceptors, transition elements, and very fast-diffusing elements provide a critical review of published works. The book also presents the neglected subject of self-diffusion, including a section on superlattices. Atomic Diffusion in III-V Semiconductors will be of interest to research workers in semiconductor science and technology, and to postgraduate students in physics, electronics, and materials science.

Atomic Diffusion In Semiconductors

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Author : D. Shaw
language : en
Publisher:
Release Date : 1973-05-01

Atomic Diffusion In Semiconductors written by D. Shaw and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1973-05-01 with categories.

Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals

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Author : Oleg Velichko
language : en
Publisher: World Scientific
Release Date : 2019-11-05

Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals written by Oleg Velichko and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-11-05 with Technology & Engineering categories.

This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.

Diffusion In Semiconductors Other Than Silicon Compilation

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Author : David J. Fisher
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 2011-02-21

Diffusion In Semiconductors Other Than Silicon Compilation written by David J. Fisher and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-02-21 with Technology & Engineering categories.

Defect and Diffusion Forum Vol. 308

Nanoscopic Diffusion Studies On Iii V Compound Semiconductor Structures

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Author : Mariam González Debs
language : en
Publisher:
Release Date : 2005

Nanoscopic Diffusion Studies On Iii V Compound Semiconductor Structures written by Mariam González Debs and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.

Introduction To Diffusion In Semiconductors

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Author : Brian Tuck
language : en
Publisher:
Release Date : 1974

Introduction To Diffusion In Semiconductors written by Brian Tuck and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1974 with Technology & Engineering categories.

Charged Semiconductor Defects

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Author : Edmund G. Seebauer
language : en
Publisher: Springer Science & Business Media
Release Date : 2008-11-14

Charged Semiconductor Defects written by Edmund G. Seebauer and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-11-14 with Science categories.

Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.