Bipolar Transistor And Mosfet Device Models
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Bipolar Transistor And Mosfet Device Models
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Author : Kunihiro Suzuki
language : en
Publisher: Bentham Science Publishers
Release Date : 2016-03-02
Bipolar Transistor And Mosfet Device Models written by Kunihiro Suzuki and has been published by Bentham Science Publishers this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-03-02 with Science categories.
Continuous efforts to develop new semiconductor devices enable device manufacturers to make significant improvements in the information technology sector. Bipolar transistors and MOSFETS are two special electronic device components that are used to construct very large scale integrated (VLSI) circuits, allowing engineers to create powerful machines that are power efficient. VLSI device characterization depends largely on semiconductor device modeling which is based on physical and electronic principles. Bipolar transistor and MOSFET device models is a textbook that describes basic functions and characterization models of these two types of transistors. Readers will learn about the processes employed to derive these models which will help them understand the modeling process. Chapters in this text cover the fundamentals of semiconductor devices, the pn junction, high and low injection region models for bipolar transistors, and different MOSFET models such as channel doping models and gated SOI models. Key features of this book include: - step by step, easy to understand presentation of model information on innovative semiconductor devices - an overview of model derivation, assumptions, approximations and limitations - novel experimental information on semiconductor parameters such as gate fringe capacitance, silicided source/drain resistance, and threshold voltage shift Bipolar transistor and MOSFET device models is an essential learning resource for advanced students and professional engineers involved in semiconductor device modeling and fabrication divisions.
Modeling And Design Techniques For Rf Power Amplifiers
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Author : Arvind Raghavan
language : en
Publisher: John Wiley & Sons
Release Date : 2008-01-09
Modeling And Design Techniques For Rf Power Amplifiers written by Arvind Raghavan and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-01-09 with Technology & Engineering categories.
Achieve higher levels of performance, integration, compactness, and cost-effectiveness in the design and modeling of radio-frequency (RF) power amplifiers RF power amplifiers are important components of any wireless transmitter, but are often the limiting factors in achieving better performance and lower cost in a wireless communication system—presenting the RF IC design community with many challenges. The next-generation technological advances presented in this book are the result of cutting-edge research in the area of large-signal device modeling and RF power amplifier design at the Georgia Institute of Technology, and have the potential to significantly address issues of performance and cost-effectiveness in this area. Richly complemented with hundreds of figures and equations, Modeling and Design Techniques for RF Power Amplifiers introduces and explores the most important topics related to RF power amplifier design under one concise cover. With a focus on efficiency enhancement techniques and the latest advances in the field, coverage includes: Device modeling for CAD Empirical modeling of bipolar devices Scalable modeling of RF MOSFETs Power amplifier IC design Power amplifier design in silicon Efficiency enhancement of RF power amplifiers The description of state-of-the-art techniques makes this book a valuable and handy reference for practicing engineers and researchers, while the breadth of coverage makes it an ideal text for graduate- and advanced undergraduate-level courses in the area of RF power amplifier design and modeling.
Modeling Bipolar Power Semiconductor Devices
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Author : Tanya K. Gachovska
language : en
Publisher: Springer Nature
Release Date : 2022-05-31
Modeling Bipolar Power Semiconductor Devices written by Tanya K. Gachovska and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-05-31 with Technology & Engineering categories.
This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models.
Semiconductor Device Modelling
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Author : Christopher M. Snowden
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Semiconductor Device Modelling written by Christopher M. Snowden and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
Semiconductor device modelling has developed in recent years from being solely the domain of device physicists to span broader technological disciplines involved in device and electronic circuit design and develop ment. The rapid emergence of very high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor ary designs. The characterisation and analysis of these devices can no longer be satisfied by electrical measurements alone. Traditional equivalent circuit models and closed-form analytical models cannot always provide consis tently accurate results for all modes of operation of these very small devices. Furthermore, the highly competitive nature of the semiconductor industry has led to the need to minimise development costs and lead-time associated with introducing new designs. This has meant that there has been a greater demand for models capable of increasing our understanding of how these devices operate and capable of predicting accurate quantitative results. The desire to move towards computer aided design and expert systems has reinforced the need for models capable of representing device operation under DC, small-signal, large-signal and high frequency operation. It is also desirable to relate the physical structure of the device to the electrical performance. This demand for better models has led to the introduction of improved equivalent circuit models and a upsurge in interest in using physical models.
Compact Models For Integrated Circuit Design
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Author : Samar K. Saha
language : en
Publisher: CRC Press
Release Date : 2018-09-03
Compact Models For Integrated Circuit Design written by Samar K. Saha and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-09-03 with Technology & Engineering categories.
Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices. Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text: Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices Includes exercise problems at the end of each chapter and extensive references at the end of the book Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.
Mosfet Models For Vlsi Circuit Simulation
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Author : Narain D. Arora
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Mosfet Models For Vlsi Circuit Simulation written by Narain D. Arora and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Computers categories.
Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
Heterojunction Bipolar Transistors For Circuit Design
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Author : Jianjun Gao
language : en
Publisher: John Wiley & Sons
Release Date : 2015-04-27
Heterojunction Bipolar Transistors For Circuit Design written by Jianjun Gao and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-04-27 with Technology & Engineering categories.
A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
Optoelectronic Integrated Circuit Design And Device Modeling
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Author : Jianjun Gao
language : en
Publisher: John Wiley & Sons
Release Date : 2011-09-19
Optoelectronic Integrated Circuit Design And Device Modeling written by Jianjun Gao and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-09-19 with Technology & Engineering categories.
In Optoelectronic Integrated Circuit Design and Device Modeling, Professor Jianjun Gao introduces the fundamentals and modeling techniques of optoelectronic devices used in high-speed optical transmission systems. Gao covers electronic circuit elements such as FET, HBT, MOSFET, as well as design techniques for advanced optical transmitter and receiver front-end circuits. The book includes an overview of optical communication systems and computer-aided optoelectronic IC design before going over the basic concept of laser diodes. This is followed by modeling and parameter extraction techniques of lasers and photodiodes. Gao covers high-speed electronic semiconductor devices, optical transmitter design, and optical receiver design in the final three chapters. Addresses a gap within the rapidly growing area of transmitter and receiver modeling in OEICs Explains diode physics before device modeling, helping readers understand their equivalent circuit models Provides comprehensive explanations for E/O and O/E conversions done with laser and photodiodes Covers an extensive range of devices for high-speed applications Accessible for students new to microwaves Presentation slides available for instructor use This book is primarily aimed at practicing engineers, researchers, and post-graduates in the areas of RF, microwaves, IC design, photonics and lasers, and solid state devices. The book is also a strong supplement for senior undergraduates taking courses in RF and microwaves. Lecture materials for instructors available at www.wiley.com/go/gao
Mixed Analog Digital Vlsi Devices And Technology
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Author : Yannis Tsividis
language : en
Publisher: World Scientific
Release Date : 2002
Mixed Analog Digital Vlsi Devices And Technology written by Yannis Tsividis and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Technology & Engineering categories.
Improve your circuit-design potential with this expert guide to the devices and technology used in mixed analog-digital VLSI chips for such high-volume applications as hard-disk drives, wireless telephones, and consumer electronics. The book provides you with a critical understanding of device models, fabrication technology, and layout as they apply to mixed analog-digital circuits.You will learn about the many device-modeling requirements for analog work, as well as the pitfalls in models used today for computer simulators such as Spice. Also included is information on fabrication technologies developed specifically for mixed-signal VLSI chips, plus guidance on the layout of mixed analog-digital chips for a high degree of analog-device matching and minimum digital-to-analog interference.This reference book features an intuitive introduction to MOSFET operation that will enable you to view with insight any MOSFET model ? besides thorough discussions on valuable large-signal and small-signal models.Filled with practical information, this first-of-its-kind book will help you grasp the nuances of mixed-signal VLSI-device models and layout that are crucial to the design of high-performance chips.
Cmos Analog Design Using All Region Mosfet Modeling
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Author : Márcio Cherem Schneider
language : en
Publisher: Cambridge University Press
Release Date : 2010-01-28
Cmos Analog Design Using All Region Mosfet Modeling written by Márcio Cherem Schneider and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-01-28 with Technology & Engineering categories.
Covering the essentials of analog circuit design, this book takes a unique design approach based on a MOSFET model valid for all operating regions, rather than the standard square-law model. Opening chapters focus on device modeling, integrated circuit technology, and layout, whilst later chapters go on to cover noise and mismatch, and analysis and design of the basic building blocks of analog circuits, such as current mirrors, voltage references, voltage amplifiers, and operational amplifiers. An introduction to continuous-time filters is also provided, as are the basic principles of sampled-data circuits, especially switched-capacitor circuits. The final chapter then reviews MOSFET models and describes techniques to extract design parameters. With numerous design examples and exercises also included, this is ideal for students taking analog CMOS design courses and also for circuit designers who need to shorten the design cycle.