Building Blocks For Time Resolved Laser Emission In Mid Infrared Quantum Well Lasers
DOWNLOAD
Download Building Blocks For Time Resolved Laser Emission In Mid Infrared Quantum Well Lasers PDF/ePub or read online books in Mobi eBooks. Click Download or Read Online button to get Building Blocks For Time Resolved Laser Emission In Mid Infrared Quantum Well Lasers book now. This website allows unlimited access to, at the time of writing, more than 1.5 million titles, including hundreds of thousands of titles in various foreign languages. If the content not found or just blank you must refresh this page
Building Blocks For Time Resolved Laser Emission In Mid Infrared Quantum Well Lasers
DOWNLOAD
Author : Gabriel D. Mounce
language : en
Publisher:
Release Date : 2003-03-01
Building Blocks For Time Resolved Laser Emission In Mid Infrared Quantum Well Lasers written by Gabriel D. Mounce and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-03-01 with categories.
The objective of this research is to improve the performance of mid- infrared semiconductor quantum-well lasers. Lasers operating in the mid-infrared are useful for many Air Force applications which include infrared (IR) countermeasures in particular. Countermeasure applications require lasers that are compact, and able to emit at high powers while operating at room temperature. Limits to power increases are seen in the transverse modal development of laser oscillation. These modes typically form in the waveguiding active region contributing to the laser output. However, competing modes outside of this region also develop when the confining structural layers have the right characteristics. These competing modes may draw power away from the main lasing mode, causing efficiency to drop. Therefore, theoretical models indicate that these "ghost" modes should be extinguished. The goal of this work is to incorporate antimony-based semiconductor laser devices into a time-resolved photoluminescence (TRPL) experiment to examine modal development immediately after excitation. TRPL utilizes a non-linear wave mixing technique known as frequency upconversion to resolve sub-picosecond luminescence occurrences after excitation. Modification to the experiment is performed to produce laser emission from five mid-IR semiconductor laser samples. Both spontaneous and stimulated emission spectra are recorded. Alignment of the experiment is also carried out to produce upconversion of the PL signal to prepare for the incorporation of laser emission.
Carrier Dynamics In Mid Infrared Quantum Well Lasers Using Time Resolved Photoluminescence
DOWNLOAD
Author : Steven M. Gorski
language : en
Publisher:
Release Date : 2002-03-01
Carrier Dynamics In Mid Infrared Quantum Well Lasers Using Time Resolved Photoluminescence written by Steven M. Gorski and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002-03-01 with Hot carriers categories.
Research in mid-infrared laser technology has uncovered numerous applications for commercial and government use. A limiting factor for mid- infrared semiconductors is nonradiative recombination, which is a process that produces excess heat without emitting a photon. Nonradiative recombination mechanisms occur over a short time period and difficult to measure. Growth methods have significantly reduced the nonradiative recombination in some materials. The objective of this research is to further the understanding of how quantum well structures impact carrier recombination. InAsSb/InAlASb and InAs/ GaInSb quantum well structures were studied with time-resolved photoluminescence utilizing upconversion, a non-linear wave mixing technique. This research reports Shockley-Read-Hall, radiative, and Auger recombination coefficients at 77k. The luminescence rise times of type I and type II structures are also compared. The number of states available within the quantum well was found to dictate how quickly carriers were able to recombine radiatively. Finally, spectral data was taken to examine the spectral decay of the luminescence. Carrier temperatures were extracted from the spectral data. Type I structures were found to have hotter carrier temperatures and higher Auger coefficients than type II structures.
Time Resolved Photoluminescence Spectra Of A Mid Infrared Multiple Quantum Well Semiconductor Laser
DOWNLOAD
Author : Anthony L. Franz
language : en
Publisher:
Release Date : 1997-12-01
Time Resolved Photoluminescence Spectra Of A Mid Infrared Multiple Quantum Well Semiconductor Laser written by Anthony L. Franz and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-12-01 with Photoluminescence categories.
Recombination mechanisms in mid-IR semiconductor lasers are strongly dependent on the carrier density of the active region. The objective of this research is to improve previous carrier density estimates through the incorporation of spectral information. One hundred photoluminescence (PL) spectra were calculated for a variety of carrier densities. Calculations were made for an InAsSb/InAlAsSb multiple quantum well laser sample assuming parabolic bands. The widths of the calculated spectral profiles were tabulated as a function of carrier density. Actual spectra were measured using the Ultrafast Mid-Infrared Photoluminescence System, which uses upconversion to measure the PL intensity in time steps smaller than 1 ps. PL spectra were obtained at 30 times, ranging from 100 ps to 3 ns. Spectral widths were measured and tabulated as a function of time. Combining the plot of calculated spectral width vs. carrier density with the plot of measured spectral width vs. time, we were able to describe the variation of carrier density with time. The carrier density vs. time plot thus generated agreed with earlier measurements by Cooley for low carrier densities. The discrepancy at higher carrier densities could be due to changing experimental conditions or the break down of the parabolic band approximation.
Long Wavelength Infrared Emitters Based On Quantum Wells And Superlattices
DOWNLOAD
Author : Manfred Helm
language : en
Publisher: CRC Press
Release Date : 2000-10-31
Long Wavelength Infrared Emitters Based On Quantum Wells And Superlattices written by Manfred Helm and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-10-31 with Technology & Engineering categories.
This book offers a thorough survey of long wavelength infrared semiconductor emitters based primarily on quantum wells and superlattices. Featuring contributions from the most prominent researchers in the field, this volume allows readers to compare different types of lasers as well as examine investigations of potential far-infrared/terrahertz sources. This is an essential reference for researchers, engineers and graduate students who wish to obtain comprehensive knowledge about infrared semiconductor sources and recent developments in this field.
Chemical Abstracts
DOWNLOAD
Author :
language : en
Publisher:
Release Date : 2002
Chemical Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Chemistry categories.
Measurement Of Ultrafast Carrier Recombination Dynamics In Mid Infrared Semiconductor Laser Material
DOWNLOAD
Author : William Cooley
language : en
Publisher:
Release Date : 1997-12-01
Measurement Of Ultrafast Carrier Recombination Dynamics In Mid Infrared Semiconductor Laser Material written by William Cooley and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-12-01 with categories.
Shockley-Read-Hall, radiative, and Auger recombination rates in mid- infrared laser structures are measured and reported using time resolved photoluminescence (TRPL) frequency upconversion. The mid-IR lasers studied were actual InAsSb/InAlAsSb multiple-quantum-well (MQW) diode lasers emitting near 3. 3 micrometers which were previously characterized for laser performance. This effort extends the initial studies and reports on the carrier recombination dynamics. Shockley-Read-Hall, radiative and Auger recombination rates at low temperature (77 K) were measured and found to be A(sub SRH) approx.10 x 10(exp 7)/sec, B(sub rad) approx. 2 x 10(exp -10) cu cm/sec and C(sub Auger)
Time Resolved Photoluminescence Of Inas Gainsb Quantum Well Lasers
DOWNLOAD
Author : Michael R. McKay
language : en
Publisher:
Release Date : 2000-05-01
Time Resolved Photoluminescence Of Inas Gainsb Quantum Well Lasers written by Michael R. McKay and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-05-01 with Photoluminescence categories.
In the world of semiconductor photonic device fabrication, one important objective may be to extract as much light as possible from the device. In these devices, photons are created when electrons recombine with holes by transitioning from a high-energy state to a lower one. Unfortunately, electron- hole recombination does not always result in the formation of a photon. There are three basic types of recombination: the first results in the formation of a photon and is called radiative recombination; and the second and third, known as Shockley-Read-Hall and Auger recombination, result in the heating of the device and do not produce photons and are therefore called non-radiative recombination. All three processes occur simultaneously in a device, and either a radiative or non-radiative recombination coefficient can be associated with the relative rate of each. The lifetime of an electron in a high-energy state is so small, on the order of nanoseconds, that there is no way to measure these coefficients directly. However, sum frequency generation is a technique to indirectly measure these coefficients by taking advantage of the speed of light to resolve these processes in time. From the resulting data, these recombination coefficients can be extracted.
Nanowires Synthesis Properties And Applications
DOWNLOAD
Author : Simas Rackauskas
language : en
Publisher:
Release Date : 2019
Nanowires Synthesis Properties And Applications written by Simas Rackauskas and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019 with Materials of engineering and construction. Mechanics of materials categories.
Nanowires are attracting wide scientific interest due to the unique properties associated with their one-dimensional geometry. Developments in the understanding of the fundamental principles of the nanowire growth mechanisms and mastering functionalization provide tools to control crystal structure, morphology, and the interactions at the material interface, and create characteristics that are superior to those of planar geometries. This book provides a comprehensive overview of the most important developments in the field of nanowires, starting from their synthesis, discussing properties, and finalizing with nanowire applications. The book consists of two parts: the first is devoted to the synthesis of nanowires and characterization, and the second investigates the properties of nanowires and their applications in future devices.
Dissertation Abstracts International
DOWNLOAD
Author :
language : en
Publisher:
Release Date : 2008
Dissertation Abstracts International written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Dissertations, Academic categories.
Electrical Electronics Abstracts
DOWNLOAD
Author :
language : en
Publisher:
Release Date : 1997
Electrical Electronics Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Electrical engineering categories.