Characterization Integration And Reliability Of Hfo2 And Laluo3 High Metal Gate Stacks For Cmos Applications
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Characterization Integration And Reliability Of Hfo2 And Laluo3 High Metal Gate Stacks For Cmos Applications
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Author : Alexander Nichau
language : en
Publisher: Forschungszentrum Jülich
Release Date : 2014-04-03
Characterization Integration And Reliability Of Hfo2 And Laluo3 High Metal Gate Stacks For Cmos Applications written by Alexander Nichau and has been published by Forschungszentrum Jülich this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-04-03 with categories.
Resistive Switching In Zro2 Based Metal Oxide Metal Structures
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Author : Irina Kärkkänen
language : en
Publisher: Forschungszentrum Jülich
Release Date : 2014
Resistive Switching In Zro2 Based Metal Oxide Metal Structures written by Irina Kärkkänen and has been published by Forschungszentrum Jülich this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.
Oxygen Transport In Thin Oxide Films At High Field Strength
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Author : Dieter Weber
language : en
Publisher: Forschungszentrum Jülich
Release Date : 2014
Oxygen Transport In Thin Oxide Films At High Field Strength written by Dieter Weber and has been published by Forschungszentrum Jülich this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.
Ionic transport in nanostructures at high eld strength has recently gained attention, because novel types of computer memory with potentially superior properties rely on such phenomena. The applied voltages are only moderate, but they drop over the distance of a few nanometers and lead to extreme eld strengths in the MV/cm region. Such strong elds contributes signi cantly to the activation energy for ionic jump processes. This leads to an exponential increase of transport speed with voltage. Conventional high-temperature ionic conduction, in contrast, only relies on thermal activation for such jumps. In this thesis, the transport of minute amounts of oxygen through a thin dielectric layer sandwiched between two thin conducting oxide electrodes was detected semiquantitatively by measuring the conductance change of the electrodes after applying a current through the dielectric layer. The relative conductance change G=G as a function of current I and duration t follows over several orders of magnitude a simple, empirical law of the form G=G = CIAtB with t parameters C, A and B; A;B 2 [0; 1]. This empirical law can be linked to a predicted exponential increase of the transport speed with voltage at high eld strength. The behavior in the time domain can be explained with a spectrum of relaxation processes, similar to the relaxation of dielectrics. The in uence of temperature on the transport is strong, but still much lower than expected. This contradicts a commonly used law for high- eld ionic transport. The di erent oxide layers are epitaxial with thicknesses between 5 and 70 nm. First large-scale test samples were fabricated using shadow masks. The general behavior of such devices was studied extensively. In an attempt to achieve quantitative results with defect-free, miniaturized devices, a lithographic manufacturing process that uses repeated steps of epitaxial deposition and structuring of the layers was developed. It employs newly developed and optimized wet chemical etching processes for the conducting electrodes. First high-quality devices could be manufactured with this process and con rmed that such devices su er less from parasitic e ects. The lithographically structured samples were made from di erent materials. The results from the rst test samples and the lithographically structured samples are therefore not directly comparable. They do exhibit however in principle the same behavior. Further investigation of such lithographically structured samples appears promising
Micro Spectroscopic Investigation Of Valence Change Processes In Resistive Switching Srtio3 Thin Films
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Author : Annemarie Köhl
language : en
Publisher: Forschungszentrum Jülich
Release Date : 2014
Micro Spectroscopic Investigation Of Valence Change Processes In Resistive Switching Srtio3 Thin Films written by Annemarie Köhl and has been published by Forschungszentrum Jülich this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.
The Role Of Defects At Functional Interfaces Between Polar And Non Polar Perovskite Oxides
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Author : Felix Gunkel
language : en
Publisher: Forschungszentrum Jülich
Release Date : 2013
The Role Of Defects At Functional Interfaces Between Polar And Non Polar Perovskite Oxides written by Felix Gunkel and has been published by Forschungszentrum Jülich this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with categories.
Characterization Integration And Reliability Of Hfo2 And Laluo3 High Kappa Metal Gate Stacks For Cmos Applications
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Author : Alexander Nichau
language : en
Publisher:
Release Date : 2013
Characterization Integration And Reliability Of Hfo2 And Laluo3 High Kappa Metal Gate Stacks For Cmos Applications written by Alexander Nichau and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with categories.
Herstellung Ultra D Nner Hoch R Oxide Und Deren Verhalten Unter Dynamischen Elektrischen Stressbedingungen
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Author : Steve Knebel
language : de
Publisher: Logos Verlag Berlin GmbH
Release Date : 2019-10-08
Herstellung Ultra D Nner Hoch R Oxide Und Deren Verhalten Unter Dynamischen Elektrischen Stressbedingungen written by Steve Knebel and has been published by Logos Verlag Berlin GmbH this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-10-08 with Technology & Engineering categories.
Im Rahmen dieser Arbeit werden HfO2 und ZrO2 basierte hoch-εr Materialsysteme mit ihrer jeweiligen Anwendung als Gateoxid bzw. DRAM Isolalationsschicht untersucht. Es werden alternative dielektrische Schichten für Speicherkondensatoren diskutiert und Alternativen zum ZrO2/Al2O3/ZrO2 (ZAZ) Schichtstapel untersucht. Neben ZAZ, wurden Schichtstapel mit SrO oder Sc2O3 Zwischenschicht abgeschieden und strukturell und elektrisch charakterisiert. Weiterhin wurden die abgeschiedenen Schichten hinsichtlich ihres dielektrischen Absorptionsverhalten sowie ihres Durchbruchsverhalten geprüft und verglichen. Ein weiterer Schwerpunkt ist das statische und dynamische Verhalten des zeitabhängigen dielektrischen Durchbruchs. Als Alternative zum DRAM Konzept wird die ferroelektrische Eigenschaft von dotierten HfO2 und dessen Einsatz als ferroelektrischer RAM vorgestellt. Bei diesem Konzept wird das paraelektrische Dielektrikum eines DRAMs durch das ferroelektrische Material ersetzt. Des Weiteren wurde im Rahmen dieser Arbeit HfO2 als hoch-εr Dielektrikum für Transistoren mit metallischem Gate (HKMG) untersucht. Mittels temperaturabhängigen Leckstrommessungen wird der dominante Leistungsmechanismus untersucht. Wie im vorangegangenen Teil der Arbeit wird das dielektrische Absorptionsverhalten studiert. Auch für HKMG Transistoren wird der zeitabhängige dielektrische Durchbruch bei alternierendem elektrischem Stress und die Rolle von Defekten in Form von Sauerstofffehlstellen beleuchtet.
50 Years Of Materials Science In Singapore
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Author : Freddy Yin Chiang Boey
language : en
Publisher: World Scientific
Release Date : 2016-06-17
50 Years Of Materials Science In Singapore written by Freddy Yin Chiang Boey and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-06-17 with Technology & Engineering categories.
50 Years of Materials Science in Singapore describes in vivid detail how a newly independent nation like Singapore developed world-class research capabilities in materials science that helped the country make rapid progress in energy, biomedical and electronics sectors. The economy mirrored this rapid trail of progress, utilizing home-grown technology and the contribution of materials science to the various sectors is undeniable in ensuring the economic growth and stability of Singapore.
Atomic Layer Deposition For Semiconductors
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Author : Cheol Seong Hwang
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-10-18
Atomic Layer Deposition For Semiconductors written by Cheol Seong Hwang and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-10-18 with Science categories.
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Characterization Integration And Reliability Of Hfo 2 And Laluo 3 High Kappa Metal Gate Stacks For Cmos Applications
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Author : Alexander Nichau
language : en
Publisher:
Release Date : 2013
Characterization Integration And Reliability Of Hfo 2 And Laluo 3 High Kappa Metal Gate Stacks For Cmos Applications written by Alexander Nichau and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with categories.