Characterization Of A Monolithic Pixel Sensor Prototype In Hv Cmos Technology For The High Luminosity Lhc
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Characterization Of A Monolithic Pixel Sensor Prototype In Hv Cmos Technology For The High Luminosity Lhc
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Author : Adrian Herkert
language : en
Publisher:
Release Date : 2020*
Characterization Of A Monolithic Pixel Sensor Prototype In Hv Cmos Technology For The High Luminosity Lhc written by Adrian Herkert and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020* with categories.
Teilchendetektoren
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Author : Hermann Kolanoski
language : de
Publisher: Springer-Verlag
Release Date : 2016-02-04
Teilchendetektoren written by Hermann Kolanoski and has been published by Springer-Verlag this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-02-04 with Science categories.
In diesem Buch werden die experimentellen Grundlagen von Teilchendetektoren und ihre Anwendung in Experimenten beschrieben. Die Entwicklung von Detektoren ist ein wichtiger Bestandteil der Teilchen-, Astroteilchen- und Kernphysik und gehört daher zum Handwerk des Experimentalphysikers in diesen Gebieten. Dieses umfassende Werk beinhaltet den kompletten Stoff für entsprechende Master-Module in der experimentellen Teilchenphysik, geht aber im Inhalt auch darüber hinaus. Zielgruppe sind Studierende, die sich in die Materie vertiefen möchten, aber auch Lehrende und Wissenschaftler, die das Buch zum Einstieg in das wissenschaftliche Arbeiten an Detektorentwicklungen verwenden können. Zielrichtung des Buches ist, die physikalischen Grundlagen für die Detektoren und ihrer verschiedenen Ausführungen so klar wie möglich und so tiefgehend wie nötig darzustellen. Die Breite des für die Detektorentwicklung nötigen Wissens umfasst viele Bereiche der Physik und Technik, von den Wechselwirkungen der Teilchen mit Materie, der Gas- und Festkörperphysik über Ladungstransport und Signalentstehung bis zur Mikroelektronik. Autoren: Hermann Kolanoski ist Professor i.R. für Physik an der Humboldt-Universität zu Berlin und am Forschungszentrum DESY (Zeuthen). Vorher arbeitete er an den Universitäten Stanford, Bonn und Dortmund. Sein Fachgebiet ist die experimentelle Teilchen- und Astroteilchenphysik. Er forscht an den Experimenten IceCube am Südpol und ATLAS am CERN. Norbert Wermes ist Physikprofessor an der Universität Bonn mit dem Forschungsgebiet experimentelle Elementarteilchenphysik und Detektorentwicklung. Vorher forschte er an den Forschungszentren DESY und CERN sowie in Stanford und Heidelberg. Mit seiner Gruppe ist er an den Großexperimenten ATLAS (CERN) und Belle II am japanischen Forschungszentrum KEK beteiligt.
Design And Characterization In Depleted Cmos Technology For Particle Physics Pixel Detector
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Author : Siddharth Bhat
language : en
Publisher:
Release Date : 2019
Design And Characterization In Depleted Cmos Technology For Particle Physics Pixel Detector written by Siddharth Bhat and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019 with categories.
The ATLAS experiment will start operating at the High Luminosity LHC accelerator (HL-LHC) in 2026 to increase the probability of new discoveries. Depleted CMOS monolithic pixel detector technology has been one of the options considered for the outer layer of an upgraded ATLAS pixel detector and is a high potential technology for future pixel detectors. In this thesis, several prototypes have been developed using different depleted CMOS technologies, for instance, LFoundry (LF) 150 nm, TowerJazz (TJ) 180 nm and austriamicrosystems AG (AMS) 180 nm. In a high-energy environment like HL-LHC, Single Event Upsets (SEU), which become of concern for reliable circuit operation. Several test-chips in AMS, TowerJazz and LFoundry technologies with different SEU tolerant structures have been prototyped and tested. The SEU tolerant structures were designed with appropriate electronics simulations using Computer Aided Design (CAD) tools in order to study the sensitivity of injected charge to upset a memory state. An alternative powering scheme named Serial Powering scheme is foreseen for the future Inner Tracker (ITk) detector of the ATLAS experiment. To meet the requirements ofthe ATLAS experiment to the environment of a pixelated layer in a high radiation collider environment, new developments with depleted CMOS sensors have been made in Shunt-LDO regulator and sensor biasing which are designed in modified TowerJazz 180 nm CMOS imaging technology. In the TowerJazz modified process, two different voltage levels are used for the purpose of sensor depletion. The bias voltages are generated by using a negative charge pump circuit.
Depleted Cmos Sensor Development For Pixel Particle Detectors Under High Intensity And High Radiative Dose
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Author : Zongde Chen
language : en
Publisher:
Release Date : 2019
Depleted Cmos Sensor Development For Pixel Particle Detectors Under High Intensity And High Radiative Dose written by Zongde Chen and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019 with categories.
The Inner Tracker (ITk) system of the ATLAS experiment will be upgraded for the 2026 High Luminosity Large Hadron Collider (HL-LHC) run. The HL-LHC will operate with a center of mass energy of 14 TeV and a peak instantaneous luminosity five times higher than at present. The increased luminosity will result in roughly ten times higher radiation levels and data rates. To cope with the ATLAS requirements in terms of radiation hardness, readout speed and granularity at the HL-LHC, the replacement of the present ATLAS Inner Tracker (ITk) is needed. Two large-scale depleted CMOS sensors in the 150 nm LF-technology called LF-CPIX and LF-MONOPIX, developed in the framework of the ATLAS Inner Tracker (ITK) upgrade for High Luminosity LHC. The work presented here shows the characterization for these three prototypes, with contributions concerning the setup development, 55Fe and 90Sr source calibration, modifications of the FPGA firmware and development of test programs. A main concern was the investigation on the radiation hardness for both the electronics and the sensor parts. We will show results concerning characterizations for these prototypes in the laboratory performance at CPPM, as well as results in multiple radiation campaigns performed at the 24 GeV IRRAD proton facility at CERN, to study the effects of Non-Ionizing Energy Loss (NIEL) and Total Ionizing Dose (TID) on the prototypes.
Characterization Of Prototype Pixel Sensors For The Cms Inner Tracker At The High Luminosity Lhc
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Author : Anna Liisa Purchert
language : en
Publisher:
Release Date : 2021
Characterization Of Prototype Pixel Sensors For The Cms Inner Tracker At The High Luminosity Lhc written by Anna Liisa Purchert and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021 with categories.
Results Of The 2015 Testbeam Of A 180 Nm Ams High Voltage Cmos Sensor Prototype
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Author :
language : en
Publisher:
Release Date : 2016
Results Of The 2015 Testbeam Of A 180 Nm Ams High Voltage Cmos Sensor Prototype written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016 with categories.
We investigated the active pixel sensors based on the High-Voltage CMOS technology as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. Our paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. These results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.
Charakterisierung Von Monolithischen Hv Cmos Pixelsensoren F R Teilchenphysikexperimente
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Author : Felix Ehrler
language : en
Publisher:
Release Date : 2021*
Charakterisierung Von Monolithischen Hv Cmos Pixelsensoren F R Teilchenphysikexperimente written by Felix Ehrler and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021* with categories.
Search For Higgs Boson Decays To Charm Quarks With The Atlas Experiment And Development Of Novel Silicon Pixel Detectors
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Author : Maria Mironova
language : en
Publisher: Springer Nature
Release Date : 2023-07-20
Search For Higgs Boson Decays To Charm Quarks With The Atlas Experiment And Development Of Novel Silicon Pixel Detectors written by Maria Mironova and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-07-20 with Science categories.
This book explores the Higgs boson and its interactions with fermions, as well as the detector technologies used to measure it. The Standard Model of Particle Physics has been a groundbreaking theory in our understanding of the fundamental properties of the universe, but it is incomplete, and there are significant hints which require new physics. The discovery of the Higgs boson in 2012 was a substantial confirmation of the Standard Model, but many of its decay modes remain elusive. This book presents the latest search for Higgs boson decays into c-quarks using a proton-proton collision dataset collected by the ATLAS experiment at the Large Hadron Collider (LHC). This decay mode has yet to be observed and requires advanced machine learning algorithms to identify c-quarks in the experiment. The results provide an upper limit on the rate of Higgs boson decays to c-quarks and a direct measurement of the Higgs boson coupling strength to c-quarks. The book also discusses the future of particle physics and the need for significant improvements to the detector to cope with increased radiation damage and higher data rates at the High-Luminosity LHC. It presents the characterization of the ATLAS pixel detector readout chip for the inner detector upgrade (ITk). The chip was subjected to irradiations using X-rays and protons to simulate the radiation environment at the HL-LHC. The tests showed that all readout chip components, including the digital logic and analogue front-end, are sufficiently radiation-tolerant to withstand the expected radiation dose. Finally, this book describes monolithic pixel detectors as a possible technology for future pixel detectors. This book is ideal for individuals interested in exploring particle physics, the Higgs boson, and the development of silicon pixel detectors.
Characterisation Of Advanced Silicon Pixel Detector Prototypes For The Inner Tracker Of The Atlas Experiment For The High Luminosity Lhc
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Author : Abhishek Sharma
language : en
Publisher:
Release Date : 2020
Characterisation Of Advanced Silicon Pixel Detector Prototypes For The Inner Tracker Of The Atlas Experiment For The High Luminosity Lhc written by Abhishek Sharma and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020 with categories.
Laboratory And Testbeam Results For Thin And Epitaxial Planar Sensors For Hl Lhc
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Author :
language : en
Publisher:
Release Date : 2015
Laboratory And Testbeam Results For Thin And Epitaxial Planar Sensors For Hl Lhc written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015 with categories.
The High-Luminosity LHC (HL-LHC) upgrade of the CMS pixel detector will require the development of novel pixel sensors which can withstand the increase in instantaneous luminosity to L = 5 × 1034 cm-2s-1 and collect ~ 3000fb-1 of data. The innermost layer of the pixel detector will be exposed to doses of about 1016 neq/ cm2. Hence, new pixel sensors with improved radiation hardness need to be investigated. A variety of silicon materials (Float-zone, Magnetic Czochralski and Epitaxially grown silicon), with thicknesses from 50 [mu]m to 320 [mu]m in p-type and n-type substrates have been fabricated using single-sided processing. The effect of reducing the sensor active thickness to improve radiation hardness by using various techniques (deep diffusion, wafer thinning, or growing epitaxial silicon on a handle wafer) has been studied. Furthermore, the results for electrical characterization, charge collection efficiency, and position resolution of various n-on-p pixel sensors with different substrates and different pixel geometries (different bias dot gaps and pixel implant sizes) will be presented.