Characterization Of Modulation Doped Field Effect Transistors With Gate Lengths Down To 600 Angstroms
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Characterization Of Modulation Doped Field Effect Transistors With Gate Lengths Down To 600 Angstroms
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Author : Paul Raymond De la Houssaye
language : en
Publisher:
Release Date : 1988
Characterization Of Modulation Doped Field Effect Transistors With Gate Lengths Down To 600 Angstroms written by Paul Raymond De la Houssaye and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988 with Modulation-doped field-effect transistors categories.
Fabrication And Characterization Of Modulation Doped Field Effect Transistors For Quantum Waveguide Structures
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Author : Wipawan Yindeepol
language : en
Publisher:
Release Date : 1990
Fabrication And Characterization Of Modulation Doped Field Effect Transistors For Quantum Waveguide Structures written by Wipawan Yindeepol and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1990 with Modulation-doped field-effect transistors categories.
Split and normal gate A1GaAs /GaAs MODFETs were fabricated along with the ohmic test structures and the Hall bar geometries. The DC characteristics of normal gate transistors were evaluated at room temperature and at 77K and the threshold voltages were extracted from the measurements and compared to the theoretical results. The performance of normal gate transistors was reasonable. The sheet carrier density and the mobility extracted from Hall measurements using the Hall bar geometry showed increase of carrier density with increasing gate voltage and an increase of mobility with increasing carrier density. The contact resistance obtained from the ohmic test structure was high and not uniform within the sample.
Characterization Of Enhanced Schottky Barrier Ingaas Alxga 1 X As Strained Channel Modulation Doped Field Effect Transistors
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Author : James A. Lott
language : en
Publisher:
Release Date : 1987
Characterization Of Enhanced Schottky Barrier Ingaas Alxga 1 X As Strained Channel Modulation Doped Field Effect Transistors written by James A. Lott and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987 with categories.
Enhanced Schottky-barrier In(0.15)Ga(0.85)As/A1xGa(1-x)As pseudomorphic modulation-doped field-effect transistors (MODFETs) were fabricated with 1.2 micron gate-lengths on MBE-grown substrates. The effective gate Schottky-barrier height was enhanced by adding a thin p(+)-GaAs layer beneath the gate. A portion of the n-A1(0.15)Ga(0.85)As barrier layer beneath the p(+)-GaAs surface layer was linearly graded from a mole fraction of 0.15 to 0.30 to further increase the effective Schottky-barrier height. MODFETs of identical dimension and doping density were fabricated without the p(+)-GaAs and/or graded N-A1(x)Ga(1-x)As layers for comparison. The goal was to improve the MODFETs high-frequency performance by reducing the gate leakage current. The effective Schottky-barrier height was shown to increase from 0.9 to 1.6 eV for the p(+)-graded samples. The extrinsic transconductance was as high as 190 mS/mm for the p(+)-grades samples and 311 mS/mm for the graded control samples. The p(+)-graded samples exhibited and f(T) and f(max)of 26 and 54 GHz, respectively, compared to 19 and 28 GHz, respectively, for the graded control samples. The noise figure for the p(+)-graded samples was 1.7 dB at 12 GHz, compared to 1.9 dB for the graded control samples. Overall, the MODFETs with enhanced barriers.
Modulation Doped Field Effect Transistors
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Author : Heinrich Daembkes
language : en
Publisher: Institute of Electrical & Electronics Engineers(IEEE)
Release Date : 1991
Modulation Doped Field Effect Transistors written by Heinrich Daembkes and has been published by Institute of Electrical & Electronics Engineers(IEEE) this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with Technology & Engineering categories.
American Doctoral Dissertations
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Author :
language : en
Publisher:
Release Date : 1988
American Doctoral Dissertations written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988 with Dissertation abstracts categories.
Power Gan Devices
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Author : Matteo Meneghini
language : en
Publisher: Springer
Release Date : 2016-09-08
Power Gan Devices written by Matteo Meneghini and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-09-08 with Technology & Engineering categories.
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Characterization Integration And Reliability Of Hfo2 And Laluo3 High Metal Gate Stacks For Cmos Applications
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Author : Alexander Nichau
language : en
Publisher: Forschungszentrum Jülich
Release Date : 2014-04-03
Characterization Integration And Reliability Of Hfo2 And Laluo3 High Metal Gate Stacks For Cmos Applications written by Alexander Nichau and has been published by Forschungszentrum Jülich this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-04-03 with categories.
The Engineering Index Annual
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Author :
language : en
Publisher:
Release Date : 1993
The Engineering Index Annual written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993 with Engineering categories.
Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.
Physical Limitations Of Semiconductor Devices
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Author : Vladislav A. Vashchenko
language : en
Publisher: Springer Science & Business Media
Release Date : 2008-03-22
Physical Limitations Of Semiconductor Devices written by Vladislav A. Vashchenko and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-03-22 with Technology & Engineering categories.
Providing an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics, the purpose of the book is popularization of the physical approach for reliability assurance. Another unique aspect of the book is the coverage given to the role of local structural defects, their mathematical description, and their impact on the reliability of the semiconductor devices.
Fundamentals Of Solid State Electronics
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Author : Chih-Tang Sah
language : en
Publisher: World Scientific Publishing Company
Release Date : 1996-09-30
Fundamentals Of Solid State Electronics written by Chih-Tang Sah and has been published by World Scientific Publishing Company this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996-09-30 with Technology & Engineering categories.
This Solution Manual, a companion volume of the book, Fundamentals of Solid-State Electronics, provides the solutions to selected problems listed in the book. Most of the solutions are for the selected problems that had been assigned to the engineering undergraduate students who were taking an introductory device core course using this book. This Solution Manual also contains an extensive appendix which illustrates the application of the fundamentals to solutions of state-of-the-art transistor reliability problems which have been taught to advanced undergraduate and graduate students. This book is also available as a set with Fundamentals of Solid-State Electronics and Fundamentals of Solid-State Electronics — Study Guide.