Chemical Vapour Deposition Of Sp2 Hybridised Boron Nitride
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Chemical Vapour Deposition Of Sp2 Hybridised Boron Nitride
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Author : Mikhail Chubarov
language : en
Publisher: Linköping University Electronic Press
Release Date : 2014-12-04
Chemical Vapour Deposition Of Sp2 Hybridised Boron Nitride written by Mikhail Chubarov and has been published by Linköping University Electronic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-12-04 with categories.
The aim of this work was to develop a chemical vapour deposition process and understand the growth of sp2 hybridised Boron Nitride (sp2-BN). Thus, the growth on different substrates together with the variation of growth parameters was investigated in details and is presented in the papers included in this thesis. Deposited films of sp2-BN were characterised with the purpose to determine optimal deposition process parameters for the growth of high crystal quality thin films with further investigations of chemical composition, morphology and other properties important for the implementation of this material towards electronic, optoelectronic devices and devices based on graphene/BN heterostructures. For the growth of sp2-BN triethyl boron and ammonia were employed as B and N precursors, respectively. Pure H2 as carrier gas is found to be necessary for the growth of crystalline sp2-BN. Addition of small amount of silane to the gas mixture improves the crystalline quality of the growing sp2-BN film. It was observed that for the growth of crystalline sp2-BN on c-axis oriented ?-Al2O3 a thin and strained AlN buffer layer is needed to support epitaxial growth of sp2-BN, while it was possible to deposit rhombohedral BN (r-BN) on various polytypes of SiC without the need for a buffer layer. The growth temperature suitable for the growth of crystalline sp2-BN is 1500 °C. Nevertheless, the growth of crystalline sp2-BN was also observed on ?-Al2O3 with an AlN buffer layer at a lower temperature of 1200 °C. Growth at this low temperature was found to be hardly controllable due to the low amount of Si that is necessary at this temperature and its accumulation in the reaction cell. When SiC was used as a substrate at the growth temperature of 1200 °C, no crystalline sp2-BN was formed, according to X-ray diffraction. Crystalline structure investigations of the deposited films showed formation of twinned r-BN on both substrates used. Additionally, it was found that the growth on ?-Al2O3 with an AlN buffer layer starts with the formation of hexagonal BN (h-BN) for a thickness of around 4 nm. The formation of h-BN was observed at growth temperatures of 1200 °C and 1500 °C on ?-Al2O3 with AlN buffer layer while there were no traces of h-BN found in the films deposited on SiC substrates in the temperature range between 1200 °C and 1700 °C. As an explanation for such growth behaviour, reproduction of the substrate crystal stacking is suggested. Nucleation and growth mechanism are investigated and presented in the papers included in this thesis.
Chemical Vapor Deposition Growth And Characterization Of Two Dimensional Hexagonal Boron Nitride
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Author : Roland Yingjie Tay
language : en
Publisher: Springer
Release Date : 2018-06-20
Chemical Vapor Deposition Growth And Characterization Of Two Dimensional Hexagonal Boron Nitride written by Roland Yingjie Tay and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-06-20 with Technology & Engineering categories.
This thesis focuses on the growth of a new type of two-dimensional (2D) material known as hexagonal boron nitride (h-BN) using chemical vapor deposition (CVD). It also presents several significant breakthroughs in the authors’ understanding of the growth mechanism and development of new growth techniques, which are now well known in the field. Of particular importance is the pioneering work showing experimental proof that 2D crystals of h-BN can indeed be hexagonal in shape. This came as a major surprise to many working in the 2D field, as it had been generally assumed that hexagonal-shaped h-BN was impossible due to energy dynamics. Beyond growth, the thesis also reports on synthesis techniques that are geared toward commercial applications. Large-area aligned growth and up to an eightfold reduction in the cost of h-BN production are demonstrated. At present, all other 2D materials generally use h-BN as their dielectric layer and for encapsulation. As such, this thesis lays the cornerstone for using CVD 2D h-BN for this purpose.
Hexagonal Boron Nitride
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Author : Kalim Deshmukh
language : en
Publisher: Elsevier
Release Date : 2024-05-31
Hexagonal Boron Nitride written by Kalim Deshmukh and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-05-31 with Technology & Engineering categories.
Hexagonal Boron Nitride: Synthesis, Properties, and Applications offers a comprehensive approach to hexagonal boron nitride (h-BN), covering synthesis, exfoliation, properties, characterization, functionalization, heterostructures, nanocomposites, and modelling and simulation, and guiding the reader towards advanced applications in biomedicine, electronics, energy storage, wastewater treatment, and other areas.The book begins by introducing hexagonal boron nitride, discussing classification, structure, synthesis methods, exfoliation, and functionalization techniques. This is followed by in-depth coverage of properties and characterization, as well as heterostructures and other two-dimensional materials, as well as nanocomposites. The fourth section of the book examines specific target applications, covering a range of cutting-edge areas including micro- and nano-electronics, anti-friction and anti-corrosive coatings, bone tissue engineering, wound healing, nanomedicine, drug delivery, catalysis, water treatment, energy storage and conversion, sensing and bio-sensing, and fire-retardant applications. Finally, computational modelling and simulation, and environmental aspects, are addressed in detail.This is a valuable resource for researchers and advanced students across nanotechnology, materials science, chemistry, environmental science, chemical engineering, biomedicine, electronics, and engineering. In an industrial setting, this book supports scientists, engineers, and R&D professionals with an interest in advanced 2D materials or nanomaterials for advanced applications. Presents the synthesis, properties, functionalization, and characterization methods for hexagonal boron nitride Explores novel applications across biomedicine, electronics, energy storage, and water treatment Addresses key challenges, such as biocompatibility, toxicity, and environmental and health impact
Plasma Enhanced Chemical Vapor Deposition Of Boron Nitride
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Author : Todd Hideo Yuzuriha
language : en
Publisher:
Release Date : 1984
Plasma Enhanced Chemical Vapor Deposition Of Boron Nitride written by Todd Hideo Yuzuriha and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1984 with categories.
Chemical Vapour Deposition Of Sp 2 Hybridised B C N Materials From Organoborons
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Author : Laurent Souqui
language : en
Publisher:
Release Date : 2019
Chemical Vapour Deposition Of Sp 2 Hybridised B C N Materials From Organoborons written by Laurent Souqui and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019 with categories.
Method Of Chemical Vapor Deposition Of Boron Nitride Using Polymeric Cyanoborane
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Author :
language : en
Publisher:
Release Date : 1994
Method Of Chemical Vapor Deposition Of Boron Nitride Using Polymeric Cyanoborane written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with categories.
Polymeric cyanoborane is volatilized, decomposed by thermal or microwave plasma energy, and deposited on a substrate as an amorphous film containing boron, nitrogen and carbon. Residual carbon present in the film is removed by ammonia treatment at an increased temperature, producing an adherent, essentially stoichiometric boron nitride film.
Phase Evolution Of Boron Nitride And Carbide During Chemical Vapor Deposition
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Author : Sachin Sharma
language : en
Publisher: Linköping University Electronic Press
Release Date : 2024-05-02
Phase Evolution Of Boron Nitride And Carbide During Chemical Vapor Deposition written by Sachin Sharma and has been published by Linköping University Electronic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-05-02 with categories.
Thin films of Boron Nitride (BN) and Boron Carbide (BC) possess properties that make them attractive for various applications. Epitaxially grown BN exhibits potential for optoelectronic devices, as piezoelectric materials, and graphene technology. Epitaxial BC is a semiconductor that could allow bandgap tuning and has potential applications in thermoelectric and optoelectronic devices. Both BN and BC material systems, generally deposited using chemical vapour deposition (CVD), are limited by the lack of control in depositing epitaxial films. In my thesis work, I have studied the evolution of various crystal phases of BN and BC and the factors that affect them during their CVD processes. I deposited and compared the growth of BN on Al2O3 (0001), (11 2 over bar 0), (1 1 over bar 02) and (10 1 over bar 0) substrates and used two organoboranes as boron precursors. Only Al2O3(11 2 over bar 0) and Al2O3 (0001) rendered crystalline films while the BN growth on the remaining substrates was X-ray amorphous. Furthermore, the less investigated Al2O3(11 2 over bar 0) had better crystalline quality versus the commonly used Al2O3 (0001). To further understand this, I studied crystalline BN thin films on an atomic scale and with a time evolution approach, uncovering the influence of carbon on hexagonal BN (h-BN). I showed that h-BN nucleates on both substrates but then either polytype transforms to rhombohedral-BN (r-BN) in stages, turns to less ordered turbostratic-BN or is terminated. An increase in local carbon content is the cause of these changes in epitaxial BN films during CVD. From the time evolution, we studied the effect of Al2O3 modification on h-BN nucleation during CVD. The interaction between boron and carbon during BN growth motivated studies also on the BxC materials. BxC was deposited using CVD at different temperatures on 4H-SiC(0001) (Si-face) and 4H-SiC(000 1 over bar) (C-face) substrates. Epitaxial rhombohedral-B4C (r-B4C) grew at 1300 °C on the C-face while the films deposited on the Si-face were polycrystalline. Comparing the initial nucleation layers on both 4H-SiC substrates on an atomic scale we showed that no interface phenomena are affecting epitaxial r-B4C growth conditions. We suggest that the difference in surface energy on the two substrate surfaces is the most plausible reason for the differences in epitaxial r-B4C growth conditions. In this thesis work, I identify the challenges and propose alternative routes to synthesise epitaxial BN and B4C materials using CVD. This fundamental materials science work enhances the understanding of growing these material systems epitaxially and in doing so furthers their development.
Synthesis Of Sp2 And Sp3 Carbon Materials
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Author : Derek Keefer
language : en
Publisher:
Release Date : 2016
Synthesis Of Sp2 And Sp3 Carbon Materials written by Derek Keefer and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016 with categories.
Carbon is the backbone of hundreds of products ranging from conductors to insulators and lubricants to machining tools. Diamond is the hardest material known and graphite is one of the softest, but there is a need for materials in between these two extremes. By taking advantage of the different pressure-dependent thermodynamic stabilities of graphite and diamond, the degree of sp2 and sp3 bonding in amorphous carbon materials can be varied. This control over bonding opens avenues for tuning properties such as electrical conductivity, hardness, and optical transmission. Two approaches to controlling sp3 and sp2 carbon formation have been studied. The first investigates techniques to deposit carbon at elevated pressures by high-pressure chemical vapor deposition. The second group of experiments involves high pressure synthesis techniques using a diamond anvil cell and developing precursors that will react at lower temperatures and pressures to give materials with sought after properties. This report is an investigation of the effect of high-pressure on the formation of amorphous carbon materials deposited by high-pressure chemical vapor deposition, dielectric breakdown plasma enhanced chemical vapor deposition, and laser induced plasma enhanced chemical vapor deposition. This report describes novel deposition and growth techniques such as high-pressure CVD of sp2 carbon wires in microcapillaries, with preliminary results showing increased sp3 bonding with the formation of a hydrogenated carbon material via plasma enhanced depositions. The second method approaches the tuning of sp2 and sp3 hybridization of carbon from the other direction of taking high pressure synthesis techniques and develop initial precursors that react at lower pressures forming an sp3 interconnected network. With pressure, amorphous carbons can also be made by compressing materials to the point where it is favorable for atoms to form new bonds. My focus is on developing a precursor that will react at lower pressure and temperatures than current fabrication techniques for forming ultra-hard materials such as diamond and cubic boron nitride. We have investigated precursors with highly unsaturated groups like cyanides and acetylenes because they have the potential to form new bonds. We have characterized these compounds with in situ Raman, IR, and XRD to track structural changes. Three different precursors have been studied to understand the effect of the starting structure on the reactivity and sp2/sp3 nature. By lowering the reaction pressure, bulk high pressure synthesis techniques could be used for more commercial applications.
Setup Of Low Pressure Chemical Vapor Deposition Of Boron Nitride Thin Films
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Author : Hsiao C. Liu
language : en
Publisher:
Release Date : 1991
Setup Of Low Pressure Chemical Vapor Deposition Of Boron Nitride Thin Films written by Hsiao C. Liu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with categories.
Parameters Affecting Deposition Of Boron Nitride Films In A Microwave Assisted Plasma Enhanced Chemical Vapor Deposition Apparatus
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Author : Matthew A. Evanko
language : en
Publisher:
Release Date : 1989
Parameters Affecting Deposition Of Boron Nitride Films In A Microwave Assisted Plasma Enhanced Chemical Vapor Deposition Apparatus written by Matthew A. Evanko and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1989 with categories.