Circuit Technology Co Optimization Of Sram Design In Advanced Cmos Nodes
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Circuit Technology Co Optimization Of Sram Design In Advanced Cmos Nodes
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Author : Hsiao-Hsuan Liu
language : en
Publisher: Springer Nature
Release Date : 2024-12-20
Circuit Technology Co Optimization Of Sram Design In Advanced Cmos Nodes written by Hsiao-Hsuan Liu and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-12-20 with Computers categories.
Modern computing engines—CPUs, GPUs, and NPUs—require extensive SRAM for cache designs, driven by the increasing demand for higher density, performance, and energy efficiency. This book delves into two primary areas within ultra-scaled technology nodes: (1) advancing SRAM bitcell scaling and (2) exploring innovative subarray designs to enhance power-performance-area (PPA) metrics across technology nodes. The first part of the book utilizes a bottom-up design-technology co-optimization (DTCO) approach, employing a dedicated PPA simulation framework to evaluate and identify the most promising strategies for SRAM bitcell scaling. It offers a comprehensive examination of SRAM bitcell scaling beyond 1 nm node, outlining a structured research cycle that includes identifying scaling bottlenecks, developing cutting-edge architectures with complementary field-effect transistor (CFET) technology, and addressing challenges such as process integration and routing complexities. Additionally, this book introduces a novel write margin methodology to better address the risks of write failures in resistance-dominated nodes. This methodology accounts for time-dependent parasitic bitline effects and incorporates timing setup of write-assist techniques to prevent underestimating the yield loss. In the second part, the focus shifts to a top-down DTCO approach due to the diminishing returns of bitcell scaling beyond 5 Å node at the macro level. As technology scales, increasing resistance and capacitance (RC) lead designers to adopt smaller subarray sizes to reduce effective RC and enhance subarray-level PPA. However, this approach can result in increased inter-subarray interconnect overhead, potentially offsetting macro-level improvements. This book examines the effects of various subarray sizes on macro-level PPA and finds that larger subarrays can significantly reduce interconnect overhead and improve the energy-delay-area product (EDAP) of SRAM macro. The introduction of the active interconnect (AIC) concept enables the use of larger subarray sizes, while integrating carbon nanotube FET as back-end-of-line compatible devices results in macro-level EDAP improvements of up to 65% when transitioning from standard subarrays to AIC divided subarrays. These findings highlight the future trajectory of SRAM subarray design in deeply scaled nodes.
Low Power Semiconductor Devices And Processes For Emerging Applications In Communications Computing And Sensing
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Author : Sumeet Walia
language : en
Publisher: CRC Press
Release Date : 2018-08-06
Low Power Semiconductor Devices And Processes For Emerging Applications In Communications Computing And Sensing written by Sumeet Walia and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-08-06 with Computers categories.
The book addresses the need to investigate new approaches to lower energy requirement in multiple application areas and serves as a guide into emerging circuit technologies. It explores revolutionary device concepts, sensors, and associated circuits and architectures that will greatly extend the practical engineering limits of energy-efficient computation. The book responds to the need to develop disruptive new system architectures and semiconductor processes aimed at achieving the highest level of computational energy efficiency for general purpose computing systems. Discusses unique technologies and material only available in specialized journal and conferences. Covers emerging materials and device structures, such as ultra-low power technologies, nanoelectronics, and microsystem manufacturing. Explores semiconductor processing and manufacturing, device design, and performance. Contains practical applications in the engineering field, as well as graduate studies. Written by international experts from both academia and industry.
Energy Efficient Computing Electronics
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Author : Santosh K. Kurinec
language : en
Publisher: CRC Press
Release Date : 2019-01-31
Energy Efficient Computing Electronics written by Santosh K. Kurinec and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-01-31 with Computers categories.
In our abundant computing infrastructure, performance improvements across most all application spaces are now severely limited by the energy dissipation involved in processing, storing, and moving data. The exponential increase in the volume of data to be handled by our computational infrastructure is driven in large part by unstructured data from countless sources. This book explores revolutionary device concepts, associated circuits, and architectures that will greatly extend the practical engineering limits of energy-efficient computation from device to circuit to system level. With chapters written by international experts in their corresponding field, the text investigates new approaches to lower energy requirements in computing. Features • Has a comprehensive coverage of various technologies • Written by international experts in their corresponding field • Covers revolutionary concepts at the device, circuit, and system levels
Handbook Of Integrated Circuit Industry
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Author : Yangyuan Wang
language : en
Publisher: Springer Nature
Release Date : 2023-11-27
Handbook Of Integrated Circuit Industry written by Yangyuan Wang and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-11-27 with Technology & Engineering categories.
Written by hundreds experts who have made contributions to both enterprise and academics research, these excellent reference books provide all necessary knowledge of the whole industrial chain of integrated circuits, and cover topics related to the technology evolution trends, fabrication, applications, new materials, equipment, economy, investment, and industrial developments of integrated circuits. Especially, the coverage is broad in scope and deep enough for all kind of readers being interested in integrated circuit industry. Remarkable data collection, update marketing evaluation, enough working knowledge of integrated circuit fabrication, clear and accessible category of integrated circuit products, and good equipment insight explanation, etc. can make general readers build up a clear overview about the whole integrated circuit industry. This encyclopedia is designed as a reference book for scientists and engineers actively involved in integrated circuit research and development field. In addition, this book provides enough guide lines and knowledges to benefit enterprisers being interested in integrated circuit industry.
Semiconductor Memories And Systems
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Author : Andrea Redaelli
language : en
Publisher: Woodhead Publishing
Release Date : 2022-06-07
Semiconductor Memories And Systems written by Andrea Redaelli and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-06-07 with Technology & Engineering categories.
Semiconductor Memories and Systems provides a comprehensive overview of the current state of semiconductor memory at the technology and system levels. After an introduction on market trends and memory applications, the book focuses on mainstream technologies, illustrating their current status, challenges and opportunities, with special attention paid to scalability paths. Technologies discussed include static random access memory (SRAM), dynamic random access memory (DRAM), non-volatile memory (NVM), and NAND flash memory. Embedded memory and requirements and system level needs for storage class memory are also addressed. Each chapter covers physical operating mechanisms, fabrication technologies, and the main challenges to scalability.Finally, the work reviews the emerging trends for storage class memory, mainly focusing on the advantages and opportunities of phase change based memory technologies. - Features contributions from experts from leading companies in semiconductor memory - Discusses physical operating mechanisms, fabrication technologies and paths to scalability for current and emerging semiconductor memories - Reviews primary memory technologies, including SRAM, DRAM, NVM and NAND flash memory - Includes emerging storage class memory technologies such as phase change memory
Electrical Electronics Abstracts
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Author :
language : en
Publisher:
Release Date : 1997
Electrical Electronics Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Electrical engineering categories.
Variation Aware Advanced Cmos Devices And Sram
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Author : Changhwan Shin
language : en
Publisher: Springer
Release Date : 2016-06-06
Variation Aware Advanced Cmos Devices And Sram written by Changhwan Shin and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-06-06 with Technology & Engineering categories.
This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM.
Low Power Circuit Design Using Advanced Cmos Technology
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Author : Milin Zhang
language : en
Publisher: CRC Press
Release Date : 2022-09-01
Low Power Circuit Design Using Advanced Cmos Technology written by Milin Zhang and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-09-01 with Science categories.
Low Power Circuit Design Using Advanced CMOS Technology is a summary of lectures from the first Advanced CMOS Technology Summer School (ACTS) 2017. The slides are selected from the handouts, while the text was edited according to the lecturers talk.ACTS is a joint activity supported by the IEEE Circuit and System Society (CASS) and the IEEE Solid-State Circuits Society (SSCS). The goal of the school is to provide society members as well researchers and engineers from industry the opportunity to learn about new emerging areas from leading experts in the field. ACTS is an example of high-level continuous education for junior engineers, teachers in academe, and students. ACTS was the results of a successful collaboration between societies, the local chapter leaders, and industry leaders. This summer school was the brainchild of Dr. Zhihua Wang, with strong support from volunteers from both the IEEE SSCS and CASS. In addition, the local companies, Synopsys China and Beijing IC Park, provided support.This first ACTS was held in the summer 2017 in Beijing. The lectures were given by academic researchers and industry experts, who presented each 6-hour long lectures on topics covering process technology, EDA skill, and circuit and layout design skills. The school was hosted and organized by the CASS Beijing Chapter, SSCS Beijing Chapter, and SSCS Tsinghua Student Chapter. The co-chairs of the first ACTS were Dr. Milin Zhang, Dr. Hanjun Jiang and Dr. Liyuan Liu. The first ACTS was a great success as illustrated by the many participants from all over China as well as by the publicity it has been received in various media outlets, including Xinhua News, one of the most popular news channels in China.
Design Of Variation Tolerant Circuits For Nanometer Cmos Technology
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Author : Mohamed Hassan Abu-Rahma
language : en
Publisher:
Release Date : 2008
Design Of Variation Tolerant Circuits For Nanometer Cmos Technology written by Mohamed Hassan Abu-Rahma and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.
Aggressive scaling of CMOS technology in sub-90nm nodes has created huge challenges. Variations due to fundamental physical limits, such as random dopants fluctuation (RDF) and line edge roughness (LER) are increasing significantly with technology scaling. In addition, manufacturing tolerances in process technology are not scaling at the same pace as transistor's channel length due to process control limitations (e.g., sub-wavelength lithography). Therefore, within-die process variations worsen with successive technology generations. These variations have a strong impact on the maximum clock frequency and leakage power for any digital circuit, and can also result in functional yield losses in variation-sensitive digital circuits (such as SRAM). Moreover, in nanometer technologies, digital circuits show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost while achieving higher performance and density. It is therefore not surprising that the International Technology Roadmap for Semiconductors (ITRS) lists variability as one of the most challenging obstacles for IC design in nanometer regime. To facilitate variation-tolerant design, we study the impact of random variations on the delay variability of a logic gate and derive simple and scalable statistical models to evaluate delay variations in the presence of within-die variations. This work provides new design insight and highlights the importance of accounting for the effect of input slew on delay variations, especially at lower supply voltages.
Cmos Sram Circuit Design And Parametric Test In Nano Scaled Technologies
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Author : Andrei Pavlov
language : en
Publisher: Springer Science & Business Media
Release Date : 2008-06-01
Cmos Sram Circuit Design And Parametric Test In Nano Scaled Technologies written by Andrei Pavlov and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-06-01 with Technology & Engineering categories.
The monograph will be dedicated to SRAM (memory) design and test issues in nano-scaled technologies by adapting the cell design and chip design considerations to the growing process variations with associated test issues. Purpose: provide process-aware solutions for SRAM design and test challenges.