Cmos Compatible Key Engineering Devices For High Speed Silicon Based Optical Interconnections
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Cmos Compatible Key Engineering Devices For High Speed Silicon Based Optical Interconnections
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Author : Jing Wang
language : en
Publisher: Springer
Release Date : 2018-11-23
Cmos Compatible Key Engineering Devices For High Speed Silicon Based Optical Interconnections written by Jing Wang and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-11-23 with Technology & Engineering categories.
This book discusses some research results for CMOS-compatible silicon-based optical devices and interconnections. With accurate simulation and experimental demonstration, it provides insights on silicon-based modulation, advanced multiplexing, polarization and efficient coupling controlling technologies, which are widely used in silicon photonics. Researchers, scientists, engineers and especially students in the field of silicon photonics can benefit from the book. This book provides valuable knowledge, useful methods and practical design that can be considered in emerging silicon-based optical interconnections and communications. And it also give some guidance to student how to organize and complete an good dissertation.
Optical Interconnects
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Author : Lorenzo Pavesi
language : en
Publisher: Springer
Release Date : 2007-05-17
Optical Interconnects written by Lorenzo Pavesi and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-05-17 with Science categories.
Optical Interconnects provides a fascinating picture of the state of the art in optical interconnects and a perspective on what can be expected in the near future. It is composed of selected reviews authored by world leaders in the field, and these reviews are written from either an academic or industrial viewpoint. An in-depth discussion of the path towards fully-integrated optical interconnects in microelectronics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of microelectronics and optoelectronics.
Advanced Gate Stack Source Drain And Channel Engineering For Si Based Cmos 6 New Materials Processes And Equipment
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Author : E. P. Gusev
language : en
Publisher: The Electrochemical Society
Release Date : 2010-04
Advanced Gate Stack Source Drain And Channel Engineering For Si Based Cmos 6 New Materials Processes And Equipment written by E. P. Gusev and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-04 with Science categories.
These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Strained Ge And Gesn Band Engineering For Si Photonic Integrated Circuits
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Author : Yijie Huo
language : en
Publisher: Stanford University
Release Date : 2010
Strained Ge And Gesn Band Engineering For Si Photonic Integrated Circuits written by Yijie Huo and has been published by Stanford University this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
The on-chip interconnect bandwidth limitation is becoming an increasingly critical challenge for integrated circuits (ICs) as device scaling continues to push the speed and density of ICs. Silicon photonics has the ability to solve this emerging problem due to its high speed, high bandwidth, low power consumption, and ability to be monolithically integrated on silicon. Most of the key devices for Si photonic ICs have already been demonstrated. However, a practical CMOS compatible coherent light source is still a major challenge. Germanium (Ge) has already been demonstrated to be a promising material for optoelectronic devices, such as photo-detectors and modulators. However, Ge is an indirect band gap semiconductor, which makes Ge-based light sources very inefficient and limits their practical use. Fortunately, the direct [uppercase Gamma] valley of the Ge conduction band is only 0.14 eV higher than the indirect L valley, suggesting that with band-structure engineering, Ge has the potential to become a direct band gap material and an efficient light emitter. In this dissertation, we first discuss our work on highly biaxial tensile strained Ge grown by molecular beam epitaxy (MBE). Relaxed step-graded InGaAs buffer layers, which are prepared with low temperature growth and high temperature annealing, are used to provide a larger lattice constant substrate to produce tensile strain in Ge epitaxial layers. Up to 2.3% in-plane biaxial tensile strained thin Ge epitaxial layers were achieved with smooth surfaces and low threading dislocation density. A strong increase of photoluminescence with highly tensile strained Ge layers at low temperature suggests that a direct band gap semiconductor has been achieved. This dissertation also presents our work on more than 9% Sn incorporation in epitaxial GeSn alloys using a low temperature MBE growth method. This amount of Sn is 10 times greater than the solid-solubility of Sn in crystalline Ge. Material characterization shows good crystalline quality without Sn precipitation or phase segregation. With increasing Sn percentage, direct band gap narrowing is observed by optical transmission measurements. The studies described in this dissertation will help enable efficient germanium based CMOS compatible coherent light sources. Other possible applications of this work are also discussed in the concluding chapter.
Photonic Integration And Photonics Electronics Convergence On Silicon Platform
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Author : Koji Yamada
language : en
Publisher: Frontiers Media SA
Release Date : 2015-11-10
Photonic Integration And Photonics Electronics Convergence On Silicon Platform written by Koji Yamada and has been published by Frontiers Media SA this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-11-10 with Engineering (General). Civil engineering (General) categories.
Silicon photonics technology, which has the DNA of silicon electronics technology, promises to provide a compact photonic integration platform with high integration density, mass-producibility, and excellent cost performance. This technology has been used to develop and to integrate various photonic functions on silicon substrate. Moreover, photonics-electronics convergence based on silicon substrate is now being pursued. Thanks to these features, silicon photonics will have the potential to be a superior technology used in the construction of energy-efficient cost-effective apparatuses for various applications, such as communications, information processing, and sensing. Considering the material characteristics of silicon and difficulties in microfabrication technology, however, silicon by itself is not necessarily an ideal material. For example, silicon is not suitable for light emitting devices because it is an indirect transition material. The resolution and dynamic range of silicon-based interference devices, such as wavelength filters, are significantly limited by fabrication errors in microfabrication processes. For further performance improvement, therefore, various assisting materials, such as indium-phosphide, silicon-nitride, germanium-tin, are now being imported into silicon photonics by using various heterogeneous integration technologies, such as low-temperature film deposition and wafer/die bonding. These assisting materials and heterogeneous integration technologies would also expand the application field of silicon photonics technology. Fortunately, silicon photonics technology has superior flexibility and robustness for heterogeneous integration. Moreover, along with photonic functions, silicon photonics technology has an ability of integration of electronic functions. In other words, we are on the verge of obtaining an ultimate technology that can integrate all photonic and electronic functions on a single Si chip. This e-Book aims at covering recent developments of the silicon photonic platform and novel functionalities with heterogeneous material integrations on this platform.
High Speed Low Driving Voltage Vertical Cavity Germanium Silicon Modulators For Optical Interconnect
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Author : Yiwen Rong
language : en
Publisher: Stanford University
Release Date : 2010
High Speed Low Driving Voltage Vertical Cavity Germanium Silicon Modulators For Optical Interconnect written by Yiwen Rong and has been published by Stanford University this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
Information processing requires interconnects to carry information from one place to another. Optical interconnects between electronics systems have attracted significant attention and development for a number of years because optical links have demonstrated potential advantages for high-speed, low-power, and interference immunity. With increasing system speed and greater bandwidth requirements, the distance over which optical communication is useful has continually decreased to chip-to-chip and on-chip levels. Monolithic integration of photonics and electronics will significantly reduce the cost of optical components and further combine the functionalities of chips on the same or different boards or systems. Modulators are one of the fundamental building blocks for optical interconnects. Previous work demonstrated modulators based upon the quantum confined Stark effect (QCSE) in SiGe p-i-n devices with strained Ge/SiGe multi-quantum-well (MQW) structures in the i region. While the previous work demonstrated the effect, it did not examine the high-speed aspects of the device, which is the focus of this dissertation. High-speed modulation and low driving voltage are the keys for the device's practical use. At lower optical intensity operation, the ultimate limitation in speed will be the RC time constant of the device itself. At high optical intensity, the large number of photo generated carriers in the MQW region will limit the performance of the device through photo carrier related voltage drop and exciton saturation. In previous work, the devices consist of MQWs configured as p-i-n diodes. The electric field induced absorption change by QCSE modulates the optical transmission of the device. The focus of this thesis is the optimization of MQW material deposition, minimization of the parasitic capacitance of the probe pads for high speed, low voltage and high contrast ratio operation. The design, fabrication and high-speed characterization of devices of different sizes, with different bias voltages are presented. The device fabrication is based on processes for standard silicon electronics and is suitable for mass-production. This research will enable efficient transceivers to be monolithically integrated with silicon chips for high-speed optical interconnects. We demonstrated a modulator, with an eye diagram of 3.125GHz, a small driving voltage of 2.5V and an f3dB bandwidth greater than 30GHz. Carrier dynamics under ultra-fast laser excitation and high-speed photocurrent response are also investigated.
Optoelectronics
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Author : Sergei Pyshkin
language : en
Publisher: BoD – Books on Demand
Release Date : 2017-07-12
Optoelectronics written by Sergei Pyshkin and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-07-12 with Technology & Engineering categories.
Optoelectronics - Advanced Device Structures (Book IV) is following the Optoelectronics (Books I, II, and III) published in 2011, 2013, and 2015, as part of the InTech collection of international works on optoelectronics. Accordingly, as with the first three books of the collection, this book covers recent achievements by specialists around the world. The growing number of countries participating in this endeavor as well as joint participation of the US and Moldova scientists in edition of this book testifies to the unifying effect of science. An interested reader will find in the book the description of properties and applications employing organic and inorganic materials, as well as the methods of fabrication and analysis of operation and regions of application of modern optoelectronic devices.
Optical Engineering
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Author :
language : en
Publisher:
Release Date : 2005
Optical Engineering written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Electronic journals categories.
Publishes papers reporting on research and development in optical science and engineering and the practical applications of known optical science, engineering, and technology.
Superconducting Devices In Quantum Optics
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Author : Robert Hadfield
language : en
Publisher: Springer
Release Date : 2016-02-29
Superconducting Devices In Quantum Optics written by Robert Hadfield and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-02-29 with Computers categories.
This book presents the basics and applications of superconducting devices in quantum optics. Over the past decade, superconducting devices have risen to prominence in the arena of quantum optics and quantum information processing. Superconducting detectors provide unparalleled performance for the detection of infrared photons in quantum cryptography, enable fundamental advances in quantum optics, and provide a direct route to on-chip optical quantum information processing. Superconducting circuits based on Josephson junctions provide a blueprint for scalable quantum information processing as well as opening up a new regime for quantum optics at microwave wavelengths. The new field of quantum acoustics allows the state of a superconducting qubit to be transmitted as a phonon excitation. This volume, edited by two leading researchers, provides a timely compilation of contributions from top groups worldwide across this dynamic field, anticipating future advances in this domain.
Miniaturized Silicon Photodetectors
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Author : Maurizio Casalino
language : en
Publisher: MDPI
Release Date : 2021-01-15
Miniaturized Silicon Photodetectors written by Maurizio Casalino and has been published by MDPI this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-01-15 with Technology & Engineering categories.
Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications.