Cmos Rf Modeling Characterization And Applications
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Cmos Rf Modeling Characterization And Applications
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Author : M. Jamal Deen
language : en
Publisher: World Scientific
Release Date : 2002
Cmos Rf Modeling Characterization And Applications written by M. Jamal Deen and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Science categories.
CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.
Device Modeling For Analog And Rf Cmos Circuit Design
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Author : Trond Ytterdal
language : en
Publisher: John Wiley & Sons
Release Date : 2003-08-01
Device Modeling For Analog And Rf Cmos Circuit Design written by Trond Ytterdal and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-08-01 with Technology & Engineering categories.
Bridges the gap between device modelling and analog circuit design. Includes dedicated software enabling actual circuit design. Covers the three significant models: BSIM3, Model 9 &, and EKV. Presents practical guidance on device development and circuit implementation. The authors offer a combination of extensive academic and industrial experience.
Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices
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Author : Dan M. Fleetwood
language : en
Publisher: World Scientific
Release Date : 2004
Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices written by Dan M. Fleetwood and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Technology & Engineering categories.
This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metalOCooxideOCosemiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level. Contents: Single Event Effects in Avionics and on the Ground (E Normand); Soft Errors in Commercial Integrated Circuits (R C Baumann); System Level Single Event Upset Mitigation Strategies (W F Heidergott); Space Radiation Effects in Optocouplers (R A Reed et al.); The Effects of Space Radiation Exposure on Power MOSFETs: A Review (K Shenai et al.); Total Dose Effects in Linear Bipolar Integrated Circuits (H J Barnaby); Hardness Assurance for Commercial Microelectronics (R L Pease); Switching Oxide Traps (T R Oldham); Online and Realtime Dosimetry Using Optically Stimulated Luminescence (L Dusseau & J Gasiot); and other articles. Readership: Practitioners, researchers, managers and graduate students in electrical and electronic engineering, semiconductor science and technology, and microelectronics."
High Performance Devices Proceedings Of The 2004 Ieee Lester Eastman Conference
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Author : Robert Leoni
language : en
Publisher: World Scientific
Release Date : 2005-04-26
High Performance Devices Proceedings Of The 2004 Ieee Lester Eastman Conference written by Robert Leoni and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-04-26 with Technology & Engineering categories.
This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers covering a wide range of materials, device types, and applications. These papers describe the results of ongoing research in three general areas: high speed technologies for advanced mixed signal and terahertz applications, advanced technologies for high performance optical links and light sources, and high power density and high efficiency technologies for next generation microwave front ends and power electronics.
Design Of High Speed Communication Circuits
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Author : Ramesh Harjani
language : en
Publisher: World Scientific
Release Date : 2006-01-17
Design Of High Speed Communication Circuits written by Ramesh Harjani and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-01-17 with Technology & Engineering categories.
MOS technology has rapidly become the de facto standard for mixed-signal integrated circuit design due to the high levels of integration possible as device geometries shrink to nanometer scales. The reduction in feature size means that the number of transistor and clock speeds have increased significantly. In fact, current day microprocessors contain hundreds of millions of transistors operating at multiple gigahertz. Furthermore, this reduction in feature size also has a significant impact on mixed-signal circuits. Due to the higher levels of integration, the majority of ASICs possesses some analog components. It has now become nearly mandatory to integrate both analog and digital circuits on the same substrate due to cost and power constraints. This book presents some of the newer problems and opportunities offered by the small device geometries and the high levels of integration that is now possible.The aim of this book is to summarize some of the most critical aspects of high-speed analog/RF communications circuits. Attention is focused on the impact of scaling, substrate noise, data converters, RF and wireless communication circuits and wireline communication circuits, including high-speed I/O.
Power Distribution Networks With On Chip Decoupling Capacitors
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Author : Renatas Jakushokas
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-11-23
Power Distribution Networks With On Chip Decoupling Capacitors written by Renatas Jakushokas and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-11-23 with Technology & Engineering categories.
This book describes methods for distributing power in high speed, high complexity integrated circuits with power levels exceeding many tens of watts and power supplies below a volt. It provides a broad and cohesive treatment of power distribution systems and related design problems, including both circuit network models and design techniques for on-chip decoupling capacitors, providing insight and intuition into the behavior and design of on-chip power distribution systems. Organized into subareas to provide a more intuitive flow to the reader, this second edition adds more than a hundred pages of new content, including inductance models for interdigitated structures, design strategies for multi-layer power grids, advanced methods for efficient power grid design and analysis, and methodologies for simultaneously placing on-chip multiple power supplies and decoupling capacitors. The emphasis of this additional material is on managing the complexity of on-chip power distribution networks.
Breakdown Phenomena In Semiconductors And Semiconductor Devices
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Author : Michael Levinshtein
language : en
Publisher: World Scientific
Release Date : 2005
Breakdown Phenomena In Semiconductors And Semiconductor Devices written by Michael Levinshtein and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Technology & Engineering categories.
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices.The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.
Diagnosis Fault Detection Tolerant Control
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Author : Nabil Derbel
language : en
Publisher: Springer Nature
Release Date : 2020-02-20
Diagnosis Fault Detection Tolerant Control written by Nabil Derbel and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-02-20 with Technology & Engineering categories.
This book focuses on unhealthy cyber-physical systems. Consisting of 14 chapters, it discusses recognizing the beginning of the fault, diagnosing the appearance of the fault, and stopping the system or switching to a special control mode known as fault-tolerant control. Each chapter includes the background, motivation, quantitative development (equations), and case studies/illustration/tutorial (simulations, experiences, curves, tables, etc.). Readers can easily tailor the techniques presented to accommodate their ad hoc applications.
Frontiers In Electronics With Cd Rom Proceedings Of The Wofe 04
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Author : Michael S Shur
language : en
Publisher: World Scientific
Release Date : 2006-08-10
Frontiers In Electronics With Cd Rom Proceedings Of The Wofe 04 written by Michael S Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-08-10 with Technology & Engineering categories.
Frontiers in Electronics reports on the most recent developments and future trends in the electronics and photonics industry. The issues address CMOS, SOI and wide band gap semiconductor technology, terahertz technology, and bioelectronics, providing a unique interdisciplinary overview of the key emerging issues.This volume accurately reflects the recent research and development trends: from pure research to research and development; and its contributors are leading experts in microelectronics, nanoelectronics, and nanophotonics from academia, industry, and government agencies.
Sic Materials And Devices
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Author : Michael Shur
language : en
Publisher: World Scientific
Release Date : 2006
Sic Materials And Devices written by Michael Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Technology & Engineering categories.
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.