Copper Impurity Defects In Silicon
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Copper Impurity Defects In Silicon
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Author : Sze-Ching Goh
language : en
Publisher:
Release Date : 2000
Copper Impurity Defects In Silicon written by Sze-Ching Goh and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.
Metal Impurities In Silicon And Germanium Based Technologies
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Author : Cor Claeys
language : en
Publisher: Springer
Release Date : 2018-08-13
Metal Impurities In Silicon And Germanium Based Technologies written by Cor Claeys and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-08-13 with Technology & Engineering categories.
This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.
Defects And Impurities In Silicon Materials
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Author : Yutaka Yoshida
language : en
Publisher: Springer
Release Date : 2016-03-30
Defects And Impurities In Silicon Materials written by Yutaka Yoshida and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-03-30 with Technology & Engineering categories.
This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
Transition Metal Defects In Silicon
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Author : Michael Steger
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-02-26
Transition Metal Defects In Silicon written by Michael Steger and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-02-26 with Science categories.
The fundamental properties of deep luminescence centres in Si associated with transition metals such as Cu, Ag, Au, and Pt have been a focus of interest for decades, both as markers for these deleterious contaminants, and also in the quest for efficient Si-based light emission. This dissertation presents the results of ultra-high resolution photoluminescence studies of these centres in specially prepared, highly enriched 28-Si samples. The greatly improved spectral resolution due to this enrichment led to the discovery of isotopic fingerprints. These fingerprints have revealed that the detailed constituents of all of the centres previously studied had been identified incorrectly. They also revealed the existence of several different families of impurity complexes containing either four or five atoms chosen from Li, Cu, Ag, Au, and Pt. These centres’ constituents have been determined, together with no-phonon transition energies, no-phonon isotope shifts, local vibrational mode energies, and the isotope shifts of the local vibrational mode energies. The data presented here for these centres should prove useful for the currently sought theoretical explanations of their formation, stability, and properties.
Metal Impurities In Silicon Device Fabrication
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Author : Klaus Graff
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-03-08
Metal Impurities In Silicon Device Fabrication written by Klaus Graff and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-08 with Technology & Engineering categories.
A discussion of the different mechanisms responsible for contamination together with a survey of their impact on device performance. The author examines the specific properties of main and rare impurities in silicon, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. Throughout all of these subjects, the book presents only reliable and up-to-date data so as to provide a thorough review of recent scientific investigations.
Copper And Hydrogen Related Defects In Silicon
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Author : Steffen Knack
language : en
Publisher:
Release Date : 2002
Copper And Hydrogen Related Defects In Silicon written by Steffen Knack and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with categories.
Fifth Workshop On The Role Of Impurities And Defects In Silicon Device Processing August 13 16 1995 Copper Mountain Colorado
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Author : Bhushan Lal Sopori
language : en
Publisher:
Release Date : 1995
Fifth Workshop On The Role Of Impurities And Defects In Silicon Device Processing August 13 16 1995 Copper Mountain Colorado written by Bhushan Lal Sopori and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Crystal growth categories.
Fifth Workshop On The Role Of Impurities And Defects In Silicon Device Processing Summary Of Panel Discussions 13 16 August 1995 Copper Mountain Colorado
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Author :
language : en
Publisher:
Release Date : 1995
Fifth Workshop On The Role Of Impurities And Defects In Silicon Device Processing Summary Of Panel Discussions 13 16 August 1995 Copper Mountain Colorado written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with categories.
Of the panel discussions included with the Fifth Workshop of the Role of Impurities and Defects in Silicon Device Processing.
Defects In Semiconductors 18
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Author : Masashi Suezawa
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 1995-11-21
Defects In Semiconductors 18 written by Masashi Suezawa and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995-11-21 with Technology & Engineering categories.
The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.
Release Of Impurities From Structural Defects In Polycrystalline Silicon Solar Cells
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Author :
language : en
Publisher:
Release Date : 1997
Release Of Impurities From Structural Defects In Polycrystalline Silicon Solar Cells written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with categories.
It is critical to understand the behavior of metallic impurities in polycrystalline silicon used for solar cells. These impurities significantly increase the minority carrier recombination rate and, in turn, degrade cell performance. Impurity gettering is a commonly used method to remove these impurities from the material, however, past work has suggested that impurity release from structural defects drastically limits the gettering process. Presently, there is only a limited understanding of impurity release from structural defects. In this work, a correlation between structural defects and the location of metal impurities in as-grown material is established and the release of nickel and copper from structural defects in polycrystalline silicon was studied in as-grown material and after sequential thermal treatments which dissolve the impurities into the silicon matrix. Synchrotron-based x-ray fluorescence impurity mapping with spatial resolution of ≈ 1 [mu]m, was used to determine impurity distributions after each thermal treatment.
