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Defects In Semiconductors 18


Defects In Semiconductors 18
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Defects In Semiconductors 18


Defects In Semiconductors 18
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Author : Masashi Suezawa
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 1995-11-21

Defects In Semiconductors 18 written by Masashi Suezawa and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995-11-21 with Technology & Engineering categories.


The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.



Proceedings Of The 18th International Conference On Defects In Semiconductors


Proceedings Of The 18th International Conference On Defects In Semiconductors
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Author : Masashi Suezawa
language : en
Publisher:
Release Date : 1995

Proceedings Of The 18th International Conference On Defects In Semiconductors written by Masashi Suezawa and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Semiconductors categories.




Defects In Semiconductors Icds 18


Defects In Semiconductors Icds 18
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Author : M. Suezawa
language : en
Publisher: Trans Tech Publications
Release Date : 1996

Defects In Semiconductors Icds 18 written by M. Suezawa and has been published by Trans Tech Publications this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Science categories.


The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.



Proceedings Of The 18th International Conference On Defects In Semiconductors


Proceedings Of The 18th International Conference On Defects In Semiconductors
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Author : Masashi Suezawa
language : en
Publisher:
Release Date : 1995

Proceedings Of The 18th International Conference On Defects In Semiconductors written by Masashi Suezawa and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Semiconductors categories.




D X Centres And Other Metastable Defects In Semiconductors Proceedings Of The Int Symposium Mauterndorf Austria 18 22 February 1991


D X Centres And Other Metastable Defects In Semiconductors Proceedings Of The Int Symposium Mauterndorf Austria 18 22 February 1991
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Author : W. Jantsch
language : en
Publisher: CRC Press
Release Date : 2020-11-25

D X Centres And Other Metastable Defects In Semiconductors Proceedings Of The Int Symposium Mauterndorf Austria 18 22 February 1991 written by W. Jantsch and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-11-25 with Science categories.


Since the first reports on metastable defects in III-V and II-VI compound semiconductors appeared in the late 1960s, the number of reports on defects with metastable states has been growing at an ever increasing rate. D(X)-center and other metastability defects cause many technical problems that are exacerbated by the uncertainty and controversy surrounding the mechanisms that cause them. A lively mix of theoretical and experimental discussions, D(X)-Centres and other Metastable Defects in Semiconductors presents a timely investigation of these systems. The book discusses topics such as, the validity of negative or positive U models, as well as alternative views that challenge existing ideas. The richness and precision of experimental data now emerging in the field is chronicled as are new investigative techniques. Based on an INT symposium, this book provides a successful forum where an extraordinary variety of ideas, including new perspectives, are examined critically.



Proceedings Of The 14th International Conference On Defects In Semiconductors


Proceedings Of The 14th International Conference On Defects In Semiconductors
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Author : H. J. von Bardeleben
language : en
Publisher:
Release Date : 1986

Proceedings Of The 14th International Conference On Defects In Semiconductors written by H. J. von Bardeleben and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1986 with Semiconductors categories.




Proceedings Of The 14th International Conference On Defects In Semiconductors


Proceedings Of The 14th International Conference On Defects In Semiconductors
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Author : H. J. von Bardeleben
language : en
Publisher:
Release Date : 1986

Proceedings Of The 14th International Conference On Defects In Semiconductors written by H. J. von Bardeleben and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1986 with Semiconductors categories.




International Conference On Defects In Semiconductors


 International Conference On Defects In Semiconductors
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Author : International Conference on Defects in Semiconductors
language : en
Publisher:
Release Date : 1986

International Conference On Defects In Semiconductors written by International Conference on Defects in Semiconductors and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1986 with categories.




Photo Induced Defects In Semiconductors


Photo Induced Defects In Semiconductors
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Author : David Redfield
language : en
Publisher: Cambridge University Press
Release Date : 1996-01-26

Photo Induced Defects In Semiconductors written by David Redfield and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996-01-26 with Science categories.


A thorough review of the properties of deep-level, localized defects in semiconductors.



Dopants And Defects In Semiconductors Second Edition


Dopants And Defects In Semiconductors Second Edition
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Author : Matthew D. McCluskey
language : en
Publisher: CRC Press
Release Date : 2018-02-19

Dopants And Defects In Semiconductors Second Edition written by Matthew D. McCluskey and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-02-19 with Science categories.


Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ?Materials Today "... well written, with clear, lucid explanations ..." ?Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.