Deep Impurities In Semiconductors
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Deep Impurities In Semiconductors
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Author : Arthur George Milnes
language : en
Publisher: Wiley-Interscience
Release Date : 1973
Deep Impurities In Semiconductors written by Arthur George Milnes and has been published by Wiley-Interscience this book supported file pdf, txt, epub, kindle and other format this book has been release on 1973 with Science categories.
Doping In Iii V Semiconductors
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Author : E. Fred Schubert
language : en
Publisher: E. Fred Schubert
Release Date : 2015-08-18
Doping In Iii V Semiconductors written by E. Fred Schubert and has been published by E. Fred Schubert this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-08-18 with Science categories.
This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.
Impurities In Semiconductors
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Author : Victor I. Fistul
language : en
Publisher: CRC Press
Release Date : 2004-01-27
Impurities In Semiconductors written by Victor I. Fistul and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004-01-27 with Science categories.
Although there is a good deal of research concerning semiconductor impurities available, most publications on the subject are very specialized and very theoretical. Until now, the field lacked a text that described the current experimental data, applications, and theory concerning impurities in semiconductor physics. Impurities in Semicondu
Deep Centers In Semiconductors
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Author : Sokrates T. Pantelides
language : en
Publisher: CRC Press
Release Date : 1992-11-30
Deep Centers In Semiconductors written by Sokrates T. Pantelides and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992-11-30 with Science categories.
Examines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap. For each deep center chosen, a scientist instrumental in its development discusses the theoretical and experimental techniques used to understand that center. The second edition contains four new sections treating recent developments, including a chapter on hydrogen in crystalline semiconductors. Annotation copyright by Book News, Inc., Portland, OR
Transition Metal Impurities In Semiconductors
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Author : Victor N Fleurov
language : en
Publisher: World Scientific
Release Date : 1994-08-31
Transition Metal Impurities In Semiconductors written by Victor N Fleurov and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994-08-31 with Science categories.
This book discusses the theory of the electron states of transition metal impurities in semiconductors in connection with the general theory of isoelectronic impurities. It contains brief descriptions of the experimental data available for transition metal impurities belonging to iron, palladium and platinum groups and for rare-earth impurities in elemental semiconductors (III-IV, II-VI and IV-VI compounds) and in several oxide compounds (TiO2, BaTiO3, SrTiO3). Also included are applications of the theory to the optical, electrical and resonance properties of semiconductors doped by the transition metal impurities.The book presents a theory unifying previously proposed ligand-field and band descriptions of transition metal impurities. It describes the theory in the context of the general theory of neutral impurities in semiconductors and demonstrates the capabilities of this description to explain the basic experimental properties of semiconductors doped by transition metal impurities. A detailed discussion of various experimental results and their theoretical interpretation is carried out.This book comprises three parts. The first two parts consider several exactly solvable models and describe numerical techniques. All the models and simulations constitute a general pattern describing transition metal and rare-earth impurities in semiconductors. The final part uses this theory in order to address various experimentally observed properties of these systems.
Transition Metal Impurities In Semiconductors
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Author : Ėrazm Mikhaĭlovich Omelʹi︠a︡novskiĭ
language : en
Publisher: CRC Press
Release Date : 1986
Transition Metal Impurities In Semiconductors written by Ėrazm Mikhaĭlovich Omelʹi︠a︡novskiĭ and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1986 with Art categories.
The study of impurities and defects in semiconductors is of fundamental interest and is important for technological applications. This monograph is a first attempt to generalise experimental data and theoretical interpretation about the nature and behaviour of impurity atoms of transition metals in semiconductors. The nature of impurities and changes in their electronic structure are analysed. The molecualr orbital approach is followed extensively in the theoretical interpretation, with particular emphasis on crystal field splitting, electron paramagnetic resonance and optical absorption spectoscopies. Coverage of experimental data is extensive with more the 300 references to the literature. This is a translation of a Russian text published in 1983. The authors have updated the content for the English language edition. This book will be of interest to scientists and engineers in solid state physics and chemistry, materials science and electronic engineering. It should also be useful for postgraduate students in these fields.
Getting To Know Semiconductors
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Author : M. Levinshtein
language : en
Publisher: World Scientific
Release Date : 1992-09
Getting To Know Semiconductors written by M. Levinshtein and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992-09 with Technology & Engineering categories.
Getting to Know Semiconductors is a simple introductory text on semiconductors. First published in Russian, 150, 000 copies of the first edition were sold out immediately. This translated English version by two of Russia's foremost scientists in the field of semiconductors is now available.Clearly written in a simple and lively manner, this book presents the most important phenomena of semiconductor physics and devices.
Shallow Impurities In Semiconductors Proceedings Of The 3rd Int Conference On Shallow Impurities In Semiconductors Held At Linkoping Sweden 10 12 August 1988
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Author : Bo Monemar
language : en
Publisher: CRC Press
Release Date : 1989-04
Shallow Impurities In Semiconductors Proceedings Of The 3rd Int Conference On Shallow Impurities In Semiconductors Held At Linkoping Sweden 10 12 August 1988 written by Bo Monemar and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1989-04 with Art categories.
Shallow impurities in semiconductors, well established as the backbone of semiconductor applications in electronics, continue to play an important role in today's research. The Third International Conference on Shallow Impurities in Semiconductors was organised to critically review some of the recent and current developments, with emphasis given to certain topics. These included shallow impurities in quantum structures, silicon and germanium, thermal donors and related defects in silicon, DX centres in III-V compounds, hydrogen passivation and diffusion of shallow impurities. Shallow Impurities in Semiconductors 1988 brings together selected papers from this conference, both invited and contributed. A broad range of physical phenomena related to shallow impurities in a large number of semiconductor materials are included. These proceedings should be of wide interest, both in the physics community and in the broad engineering field of microelectronics.
Metal Impurities In Silicon And Germanium Based Technologies
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Author : Cor Claeys
language : en
Publisher: Springer
Release Date : 2018-08-13
Metal Impurities In Silicon And Germanium Based Technologies written by Cor Claeys and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-08-13 with Technology & Engineering categories.
This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.
Dopants And Defects In Semiconductors
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Author : Matthew D. McCluskey
language : en
Publisher: CRC Press
Release Date : 2012-02-23
Dopants And Defects In Semiconductors written by Matthew D. McCluskey and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-02-23 with Science categories.
Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts.The authors first present introductory concepts, including basic semiconductor theory, defect classif