Design And Performance Trade Offs In Igbt Modules For Hard And Soft Switching Applications
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Design And Performance Trade Offs In Igbt Modules For Hard And Soft Switching Applications
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Author : Sameer P. Pendharkar
language : en
Publisher:
Release Date : 1996
Design And Performance Trade Offs In Igbt Modules For Hard And Soft Switching Applications written by Sameer P. Pendharkar and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with categories.
Application Specific Performance Evaluation Of Power Semiconductor Devices
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Author : Malay Trivedi
language : en
Publisher:
Release Date : 1996
Application Specific Performance Evaluation Of Power Semiconductor Devices written by Malay Trivedi and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with categories.
Electrical Electronics Abstracts
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Author :
language : en
Publisher:
Release Date : 1997
Electrical Electronics Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Electrical engineering categories.
Igbt Modules
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Author : Andreas Volke
language : en
Publisher:
Release Date : 2012
Igbt Modules written by Andreas Volke and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with Insulated gate bipolar transistors categories.
Proceedings Of The International Symposium On Power Semiconductor Devices And Ics
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Author :
language : en
Publisher:
Release Date : 2000
Proceedings Of The International Symposium On Power Semiconductor Devices And Ics written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Integrated circuits categories.
Ias 93
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Author : IEEE Industry Applications Society. Meeting
language : en
Publisher:
Release Date : 1993
Ias 93 written by IEEE Industry Applications Society. Meeting and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993 with Electric machinery categories.
Modeling And Simulation For Electric Vehicle Applications
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Author : Mohamed Amine Fakhfakh
language : en
Publisher: BoD – Books on Demand
Release Date : 2016-10-05
Modeling And Simulation For Electric Vehicle Applications written by Mohamed Amine Fakhfakh and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-10-05 with Technology & Engineering categories.
The book presents interesting topics from the area of modeling and simulation of electric vehicles application. The results presented by the authors of the book chapters are very interesting and inspiring. The book will familiarize the readers with the solutions and enable the readers to enlarge them by their own research. It will be useful for students of Electrical Engineering; it helps them solve practical problems.
Gallium Nitride Power Devices
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Author : Hongyu Yu
language : en
Publisher: CRC Press
Release Date : 2017-07-06
Gallium Nitride Power Devices written by Hongyu Yu and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-07-06 with Science categories.
GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.
Insulated Gate Bipolar Transistor Igbt Theory And Design
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Author : Vinod Kumar Khanna
language : en
Publisher: John Wiley & Sons
Release Date : 2004-04-05
Insulated Gate Bipolar Transistor Igbt Theory And Design written by Vinod Kumar Khanna and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004-04-05 with Technology & Engineering categories.
A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.
Power Gan Devices
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Author : Matteo Meneghini
language : en
Publisher: Springer
Release Date : 2016-09-08
Power Gan Devices written by Matteo Meneghini and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-09-08 with Technology & Engineering categories.
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.