Design Fabrication And Characterization Of Modulation Doped Field Effect Transistors
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Design Fabrication And Characterization Of Modulation Doped Field Effect Transistors
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Author : Hyunchang Park
language : en
Publisher:
Release Date : 1989
Design Fabrication And Characterization Of Modulation Doped Field Effect Transistors written by Hyunchang Park and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1989 with Doped semiconductors categories.
Design Fabrication And Characterization Of Indium Phosphide Based Heterostructure Field Effect Transistors For High Power Microwave Applications
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Author : Daniel Gerard Ballegeer
language : en
Publisher:
Release Date : 1995
Design Fabrication And Characterization Of Indium Phosphide Based Heterostructure Field Effect Transistors For High Power Microwave Applications written by Daniel Gerard Ballegeer and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with categories.
InP-based heterostructure field effect transistors (HFETs) have, over the past several years, demonstrated microwave performance capabilities superior to those of GaAs-based and Si-based transistors. In particular, InGaAs/InAlAs modulation-doped field effect transistors (MODFETs) have exhibited world-record unity current gain frequencies ($fsb{t}$s) as well as extremely high power cutoff frequencies ($fsb{rm max}$s) and have, therefore, become the optimum devices for small-signal applications at high frequencies, particularly in low-noise applications. Despite these strengths, InP-based HFETs have inherent weaknesses which limit their capabilities for large-signal, high output power applications. Due to a combination of the poor Schottky characteristics of InAlAs, which is often the material in contact with the metal gate, and the small bandgap of InGaAs, which is the material often used for the channel, the devices typically have lower breakdown voltages than their GaAs counterparts. However, because of the phenomenally high values of $fsb{t}$ and $fsb{rm max}$ obtainable for these devices, there has been a growing desire to overcome these weaknesses in order that the devices can be used for high-power applications at microwave frequencies. The subject of this work is the investigation of the possibility of designing InP-based HFETs for use as high-power devices. The emphasis is not on obtaining a world-record high frequency power device; instead, the focus is on the critical issues involved when designing the devices for high power applications. Hence, the goal is to obtain an in-depth understanding of the internal physics of the FETs when they are operating as power devices, and in so doing, attempt to arrive at designs and techniques which will overcome some of the limitations of InP-based HFETs.
Fabrication And Characterization Of Modulation Doped Field Effect Transistors For Quantum Waveguide Structures
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Author : Wipawan Yindeepol
language : en
Publisher:
Release Date : 1990
Fabrication And Characterization Of Modulation Doped Field Effect Transistors For Quantum Waveguide Structures written by Wipawan Yindeepol and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1990 with Modulation-doped field-effect transistors categories.
Split and normal gate A1GaAs /GaAs MODFETs were fabricated along with the ohmic test structures and the Hall bar geometries. The DC characteristics of normal gate transistors were evaluated at room temperature and at 77K and the threshold voltages were extracted from the measurements and compared to the theoretical results. The performance of normal gate transistors was reasonable. The sheet carrier density and the mobility extracted from Hall measurements using the Hall bar geometry showed increase of carrier density with increasing gate voltage and an increase of mobility with increasing carrier density. The contact resistance obtained from the ohmic test structure was high and not uniform within the sample.
Design Fabrication And Characterization Of Complementary Heterojunction Field Effect Transistors
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Author : Terry E. McMahon
language : en
Publisher:
Release Date : 1994
Design Fabrication And Characterization Of Complementary Heterojunction Field Effect Transistors written by Terry E. McMahon and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with Modulation-doped field-effect transistors categories.
Characterization Of Modulation Doped Field Effect Transistors With Gate Lengths Down To 600 Angstroms
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Author : Paul Raymond De la Houssaye
language : en
Publisher:
Release Date : 1988
Characterization Of Modulation Doped Field Effect Transistors With Gate Lengths Down To 600 Angstroms written by Paul Raymond De la Houssaye and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988 with Modulation-doped field-effect transistors categories.
Design Fabrication And Performance Of Aluminum Gallium Arsenide Gallium Arsenide Modulation Doped Field Effect Transistors For High Speed Applications
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Author : Allen Nicholas Lepore
language : en
Publisher:
Release Date : 1988
Design Fabrication And Performance Of Aluminum Gallium Arsenide Gallium Arsenide Modulation Doped Field Effect Transistors For High Speed Applications written by Allen Nicholas Lepore and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988 with Doped semiconductors categories.
Design Fabrication And Characterization Of Inas Alsb Heterojunction Field Effect Transistors
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Author : James David Werking
language : en
Publisher:
Release Date : 1993
Design Fabrication And Characterization Of Inas Alsb Heterojunction Field Effect Transistors written by James David Werking and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993 with categories.
Design Fabrication And Characterization Of The Si Based Tailored Field Effect Transistor
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Author : Pavan Vidyadhar Muzumdar
language : en
Publisher:
Release Date : 1991
Design Fabrication And Characterization Of The Si Based Tailored Field Effect Transistor written by Pavan Vidyadhar Muzumdar and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with Field-effect transistors categories.
Design Fabrication And Characterization Of Inp Based Heterostructure Field Effect Transistors For High Power Microwave Applications
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Author : Daniel Gerard Ballegeer
language : en
Publisher:
Release Date : 1995
Design Fabrication And Characterization Of Inp Based Heterostructure Field Effect Transistors For High Power Microwave Applications written by Daniel Gerard Ballegeer and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Heterostructures categories.
Masters Theses In The Pure And Applied Sciences
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Author : Wade H. Shafer
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Masters Theses In The Pure And Applied Sciences written by Wade H. Shafer and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 34 (thesis year 1989) a total of 13,377 theses titles from 26 Canadian and 184 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this important annual reference work. While Volume 34 reports theses submitted in 1989, on occasion, certain univer sities do report theses submitted in previous years but not reported at the time.