Design Fabrication And Characterization Of The Si Gexsi1 X Alloy Dislocation Based Field Effect Transistor
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Design Fabrication And Characterization Of The Si Gexsi1 X Alloy Dislocation Based Field Effect Transistor
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Author : Paul Wai-Hung Chau
language : en
Publisher:
Release Date : 1991
Design Fabrication And Characterization Of The Si Gexsi1 X Alloy Dislocation Based Field Effect Transistor written by Paul Wai-Hung Chau and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with Lithography, Electron beam categories.
Chemical Abstracts
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Author :
language : en
Publisher:
Release Date : 2002
Chemical Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Chemistry categories.
Nano Cmos Circuit And Physical Design
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Author : Ban Wong
language : en
Publisher: John Wiley & Sons
Release Date : 2005-04-08
Nano Cmos Circuit And Physical Design written by Ban Wong and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-04-08 with Technology & Engineering categories.
Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation.
Investigation On Sige Selective Epitaxy For Source And Drain Engineering In 22 Nm Cmos Technology Node And Beyond
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Author : Guilei Wang
language : en
Publisher: Springer Nature
Release Date : 2019-09-20
Investigation On Sige Selective Epitaxy For Source And Drain Engineering In 22 Nm Cmos Technology Node And Beyond written by Guilei Wang and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-09-20 with Technology & Engineering categories.
This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.
Fibre Optic Communication Devices
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Author : Norbert Grote
language : en
Publisher: Springer Science & Business Media
Release Date : 2001-01-26
Fibre Optic Communication Devices written by Norbert Grote and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001-01-26 with Technology & Engineering categories.
Optoelectronic devices and fibre optics are the basis of cutting-edge communication systems. This monograph deals with the various components of these systems, including lasers, amplifiers, modulators, converters, filters, sensors, and more.
Simox
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Author : Maria J. Anc
language : en
Publisher: IET
Release Date : 2004-12-03
Simox written by Maria J. Anc and has been published by IET this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004-12-03 with Technology & Engineering categories.
SIMOX represents the first effort to compile a broad spectrum of knowledge from various groups of researchers and technologists in the world. It provides the reader with a basic understanding of SIMOX technology and in addition gives a good starting point for further investigation and applications.
Properties Of Crystalline Silicon
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Author : Robert Hull
language : en
Publisher: IET
Release Date : 1999
Properties Of Crystalline Silicon written by Robert Hull and has been published by IET this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with Electronic books categories.
A unique and well-organized reference, this book provides illuminating data, distinctive insight and expert guidance on silicon properties.
Two Dimensional Transition Metal Dichalcogenides
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Author : Alexander V. Kolobov
language : en
Publisher: Springer
Release Date : 2016-07-26
Two Dimensional Transition Metal Dichalcogenides written by Alexander V. Kolobov and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-07-26 with Technology & Engineering categories.
This book summarizes the current status of theoretical and experimental progress in 2 dimensional graphene-like monolayers and few-layers of transition metal dichalcogenides (TMDCs). Semiconducting monolayer TMDCs, due to the presence of a direct gap, significantly extend the potential of low-dimensional nanomaterials for applications in nanoelectronics and nano-optoelectronics as well as flexible nano-electronics with unprecedented possibilities to control the gap by external stimuli. Strong quantum confinement results in extremely high exciton binding energies which forms an interesting platform for both fundamental studies and device applications. Breaking of spatial inversion symmetry in monolayers results in strong spin-valley coupling potentially leading to their use in valleytronics. Starting with the basic chemistry of transition metals, the reader is introduced to the rich field of transition metal dichalcogenides. After a chapter on three dimensional crystals and a description of top-down and bottom-up fabrication methods of few-layer and single layer structures, the fascinating world of two-dimensional TMDCs structures is presented with their unique atomic, electronic, and magnetic properties. The book covers in detail particular features associated with decreased dimensionality such as stability and phase-transitions in monolayers, the appearance of a direct gap, large binding energy of 2D excitons and trions and their dynamics, Raman scattering associated with decreased dimensionality, extraordinarily strong light-matter interaction, layer-dependent photoluminescence properties, new physics associated with the destruction of the spatial inversion symmetry of the bulk phase, spin-orbit and spin-valley couplings. The book concludes with chapters on engineered heterostructures and device applications such as a monolayer MoS2 transistor. Considering the explosive interest in physics and applications of two-dimensional materials, this book is a valuable source of information for material scientists and engineers working in the field as well as for the graduate students majoring in materials science.
Strained Silicon Heterostructures
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Author : C. K. Maiti
language : en
Publisher: IET
Release Date : 2001
Strained Silicon Heterostructures written by C. K. Maiti and has been published by IET this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with Technology & Engineering categories.
This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.
Fundamentals Of Solid State Electronics
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Author : Chih-Tang Sah
language : en
Publisher: World Scientific Publishing Company
Release Date : 1996-09-30
Fundamentals Of Solid State Electronics written by Chih-Tang Sah and has been published by World Scientific Publishing Company this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996-09-30 with Technology & Engineering categories.
This Solution Manual, a companion volume of the book, Fundamentals of Solid-State Electronics, provides the solutions to selected problems listed in the book. Most of the solutions are for the selected problems that had been assigned to the engineering undergraduate students who were taking an introductory device core course using this book. This Solution Manual also contains an extensive appendix which illustrates the application of the fundamentals to solutions of state-of-the-art transistor reliability problems which have been taught to advanced undergraduate and graduate students. This book is also available as a set with Fundamentals of Solid-State Electronics and Fundamentals of Solid-State Electronics — Study Guide.