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Dispersion Relations In Heavily Doped Nanostructures


Dispersion Relations In Heavily Doped Nanostructures
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Dispersion Relations In Heavily Doped Nanostructures


Dispersion Relations In Heavily Doped Nanostructures
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Author : Kamakhya Prasad Ghatak
language : en
Publisher: Springer
Release Date : 2015-10-26

Dispersion Relations In Heavily Doped Nanostructures written by Kamakhya Prasad Ghatak and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-10-26 with Technology & Engineering categories.


This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.



Elastic Constants In Heavily Doped Low Dimensional Materials


Elastic Constants In Heavily Doped Low Dimensional Materials
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Author : Kamakhya Prasad Ghatak
language : en
Publisher: World Scientific
Release Date : 2021-03-15

Elastic Constants In Heavily Doped Low Dimensional Materials written by Kamakhya Prasad Ghatak and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-03-15 with Science categories.


The elastic constant (EC) is a very important mechanical property of the these materials and its significance is already well known in literature. This first monograph solely deals with the quantum effects in EC of heavily doped (HD) low dimensional materials. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb₂, stressed materials, GaSb, Te, II-V, Bi₂Te₃, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, II-VI, IV-VI, and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices changes the band structure of semiconductors in fundamental ways, which have also been incorporated in the study of EC in HD low dimensional optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under intense external fields has also been discussed in this context. The influences of magnetic quantization, crossed electric and quantizing fields, electric field and light waves on the EC in HD semiconductors and super-lattices are discussed.The content of this book finds twenty-five different applications in the arena of nano-science and nano-technology. We The authors have discussed the experimental methods of determining the Einstein Relation, screening length and EC in this context. This book contains circa 200 open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers in the fields of condensed matter physics, materials science, solid state sciences, nano-science and technology and allied fields in addition to the graduate courses in semiconductor nanostructures.



Einstein Relation In Compound Semiconductors And Their Nanostructures


Einstein Relation In Compound Semiconductors And Their Nanostructures
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Author : Kamakhya Prasad Ghatak
language : en
Publisher: Springer Science & Business Media
Release Date : 2008-11-16

Einstein Relation In Compound Semiconductors And Their Nanostructures written by Kamakhya Prasad Ghatak and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-11-16 with Science categories.


Focusing only on the Einstein relation in compound semiconductors and their nanostructures, this book deals with open research problems from carbon nanotubes to quantum wire superlattices with different band structures, and other field assisted systems.



Electron Statistics In Quantum Confined Superlattices


Electron Statistics In Quantum Confined Superlattices
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Author : Kamakhya Prasad Ghatak
language : en
Publisher: World Scientific
Release Date : 2023-03-14

Electron Statistics In Quantum Confined Superlattices written by Kamakhya Prasad Ghatak and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-03-14 with Science categories.


The concepts of the Electron Statistics (ES) and the ES dependent electronic properties are basic pillars in semiconductor electronics and this first-of-its-kind book deals with the said concepts in doping superlattices (SLs), quantum well, quantum wire and quantum dot SLs, effective mass SLs, SLs with graded interfaces and Fibonacci SLs under different physical conditions respectively. The influences of intense radiation and strong electric fields under said concepts have been considered together with the heavily doped SLs in this context on the basis of newly formulated the electron energy spectra in all the cases. We have suggested experimental determinations of the Einstein relation for the Diffusivity-Mobility ratio, the Debye screening length, Elastic Constants and the content of this book finds 25 different applications in the arena of nanoscience and nanotechnology.This book contains hundred open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers. It is written for post graduate students of various departments of different academic organizations, engineers and professionals in the fields of solid state electronics, materials science, solid state sciences, nano-science, nanotechnology and nano materials in general.



Quantum Effects Heavy Doping And The Effective Mass


Quantum Effects Heavy Doping And The Effective Mass
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Author : Kamakhya Prasad Ghatak
language : en
Publisher: World Scientific
Release Date : 2016-12-08

Quantum Effects Heavy Doping And The Effective Mass written by Kamakhya Prasad Ghatak and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-12-08 with Science categories.


The importance of the effective mass (EM) is already well known since the inception of solid-state physics and this first-of-its-kind monograph solely deals with the quantum effects in EM of heavily doped (HD) nanostructures. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb2, stressed materials, GaSb, Te, II-V, Bi2Te3, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, II-VI, IV-VI, and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices change the band structure of semiconductors in fundamental ways, which have also been incorporated in the study of EM in HD quantized structures of optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under intense external fields has also been discussed in this context. The influences of magnetic quantization, crossed electric and quantizing fields, electric field and light waves on the EM in HD semiconductors and super-lattices are discussed.The content of this book finds twenty-eight different applications in the arena of nano-science and nano-technology. This book contains 200 open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers in the fields of condensed matter physics, materials science, solid state sciences, nano-science and technology and allied fields in addition to the graduate courses in semiconductor nanostructures. The book is written for post-graduate students, researchers, engineers and professionals in the fields of condensed matter physics, solid state sciences, materials science, nanoscience and technology and nanostructured materials in general.



Generation Detection And Processing Of Terahertz Signals


Generation Detection And Processing Of Terahertz Signals
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Author : Aritra Acharyya
language : en
Publisher: Springer Nature
Release Date : 2021-09-21

Generation Detection And Processing Of Terahertz Signals written by Aritra Acharyya and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-09-21 with Technology & Engineering categories.


This book contains detailed descriptions and associated discussions regarding different generation, detection and signal processing techniques for the electrical and optical signals within the THz frequency spectrum (0.3–10 THz). It includes detailed reviews of some recently developed electronic and photonic devices for generating and detecting THz waves, potential materials for implementing THz passive circuits, some newly developed systems and methods associated with THz wireless communication, THz antennas and some cutting-edge techniques associated with the THz signal and image processing. The book especially focuses on the recent advancements and several research issues related to THz sources, detectors and THz signal and image processing techniques; it also discusses theoretical, experimental, established and validated empirical works on these topics. The book caters to a very wide range of readers from basic science to technological experts as well as students.



Emerging Trends In Terahertz Engineering And System Technologies


Emerging Trends In Terahertz Engineering And System Technologies
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Author : Arindam Biswas
language : en
Publisher: Springer Nature
Release Date : 2021-02-12

Emerging Trends In Terahertz Engineering And System Technologies written by Arindam Biswas and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-02-12 with Science categories.


This book highlights emerging trends in terahertz engineering and system technologies, mainly, devices, advanced materials, and various applications in THz technology. It includes advanced topics such as terahertz biomedical imaging, pattern recognition and tomographic reconstruction for THz biomedical imaging by use of machine learning and artificial intelligence, THz imaging radars for autonomous vehicle applications, THZ imaging system for security and surveillance. It also discusses theoretical, experimental, established and validated empirical work on these topics and the intended audience is both academic and professional.



Advances In Terahertz Technology And Its Applications


Advances In Terahertz Technology And Its Applications
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Author : Sudipta Das
language : en
Publisher: Springer Nature
Release Date : 2021-10-30

Advances In Terahertz Technology And Its Applications written by Sudipta Das and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-10-30 with Science categories.


This book highlights the growing applications of THz technology and various modules used for their successful realization. The enormous advantages of THz devices like higher resolution, spatial directivity, high-speed communication, greater bandwidth, non-ionizing signal nature and compactness make them useful in various applications like communication, sensing, security, safety, spectroscopy, manufacturing, bio-medical, agriculture, imaging, etc. Since the THz radiation covers frequencies from 0.1THz to around 10THz and highly attenuated by atmospheric gases, they are used in short-distance applications only. The book focuses on recent advances and different research issues in terahertz technology and presents theoretical, methodological, well-established and validated empirical works dealing with the different topics.



Density Of States Function And Related Applications In Quantized Structures


Density Of States Function And Related Applications In Quantized Structures
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Author : Kamakhya Prasad Ghatak
language : en
Publisher: World Scientific
Release Date : 2025-05-29

Density Of States Function And Related Applications In Quantized Structures written by Kamakhya Prasad Ghatak and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2025-05-29 with Science categories.


In recent years there has been considerable interest in studying the DENSITY-OF-STATES (DOS) functions and Related Applications in Quantized Structures of different technologically important materials in low dimensional electronics. The concept of DOS function is of fundamental importance for not only the characterization of semiconductor nanostructures but also in the study of the carrier transport in quantum effect devices. The acoustic mobility limited momentum relaxation time is inversely proportional to the respective DOS function of a particular semiconductor and the DOS function, in turn, is connected to the twenty five important transport topics of quantum effect devices namely the Landau Dia and Pauli's Para Magnetic Susceptibilities, the Einstein's Photoemission, the Einstein Relation, the Debye Screening Length, the Generalized Raman gain, the Normalized Hall coefficient, the Fowler-Nordheim Field Emission, the Gate Capacitance, the Thermoelectric Power, the Plasma Frequency, the Magneto-Thermal effect in Quantized Structures, the Activity coefficient, the Reflection coefficient, the Heat Capacity, the Faraday rotation, the Optical Effective Mass, the Carrier contribution to the elastic constants, the Diffusion coefficient of the minority carriers, the Nonlinear optical response, the Third order nonlinear optical susceptibility, the Righi-Leduc coefficient, the Electric Susceptibility, the Electric Susceptibility Mass, the Electron Diffusion Thermo-power and the Hydrostatic Piezo-resistance Coefficient respectively.This first-of-a-kind monograph investigates the DOS function and the aforementioned applications in quantized structures of tetragonal and non-linear optical, III-V, II-VI, Gallium Phosphide, Germanium, Platinum Antimonide, stressed, IV-VI, Lead Germanium Telluride, II-V, Zinc and Cadmium diphosphides and Bismuth Telluride respectively. We have also formulated the same and the allied physical properties of III-V, II-VI, IV-VI and HgTe/CdTe quantum well Heavily Doped (HD) superlattices with graded interfaces under magnetic quantization, III-V, II-VI, IV-VI and HgTe/CdTe HD effective mass superlattices under magnetic quantization, quantum confined effective mass superlattices and superlattices of HD optoelectronic materials with graded interfaces in addition to other quantized structures respectively.This book covers from elementary applications in the first chapter up to rather advanced investigations in the later chapters. We have suggested experimental determinations of the Einstein relation for the Diffusivity-Mobility ratio, the Debye screening length and Elastic Constants in various types of quantized structures under different physical conditions. This book contains 222 current open research problems which form an integral part of the text and are useful for both aspiring students and researchers. It is written for graduate / post graduate students, engineers and professionals in the fields of condensed matter physics, solid state sciences, materials science, nanoscience, nanotechnology and nanostructured materials in general and this book will be invaluable to all those researching in academic and industrial laboratories in the said cases worldwide.



Quantum Capacitance In Quantized Transistors


Quantum Capacitance In Quantized Transistors
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Author : Kamakhya Prasad Ghatak
language : en
Publisher: World Scientific
Release Date : 2024-02-06

Quantum Capacitance In Quantized Transistors written by Kamakhya Prasad Ghatak and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-02-06 with Science categories.


In recent years, there has been considerable interest in studying the quantum capacitance (QC) in 2D quantum MOSFETs (QMOSFET) and 1D Nano Wire FET (NWFET) devices of various technologically important materials which find extensive applications in many directions in low dimensional electronics. The 2D and 1D electron statistics in inversion layers of MOSFETs can rather easily be varied by changing the gate voltage which, in turn, brings a change of the surface electric field, the QC depends on the gate-voltage. This first-of-its-kind book deals solely with the QC in 2D MOSFETs of non-linear optical, ternary, quaternary, III-V compounds, II-VI, IV-VI, stressed Kane type, Ge, GaP, Bismuth telluride, Gallium Antimonide and their 1D NWFETs counter parts. The influence of quantizing magnetic field, crossed electric and magnetic fields, parallel magnetic field, have also been considered on the QC of the said devices of the aforementioned materials. The influences of strong light waves and ultra-strong electric field present in nano-devices have also been considered. The accumulation layers of the quantum effect devices of the said materials have also been discussed in detail by formulating the respective dispersion relations of the heavily doped compounds. The QC in 1D MOSFET of the said materials have also been investigated in this context on the basis of newly formulated electron energy spectra in all the cases. The QC in quantum well transistors and magneto quantum well transistors together with CNTFETs have been formulated and discussed in detail along with I-V equations of ballistic QWFETs and NWFETs together with their heavily doped counter parts under different external physical conditions. In this context, experimental determinations are suggested of the Einstein relation for the Diffusivity-Mobility ratio, the Debye screening length, Elastic Constants and the content of this book finds twenty-two different applications in the arena of nanoscience and nanotechnology.This book contains hundred open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers.