Distributed Model For Thermal Characterisation Of Oxide Isolated Silicone Germanium Heterojunction Bipolar Transistors
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Distributed Model For Thermal Characterisation Of Oxide Isolated Silicone Germanium Heterojunction Bipolar Transistors
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Author : Sharath Patil
language : en
Publisher:
Release Date : 2011
Distributed Model For Thermal Characterisation Of Oxide Isolated Silicone Germanium Heterojunction Bipolar Transistors written by Sharath Patil and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.
Demand for high-speed and cost-effective devices has resulted in the development of smaller, high frequency devices. Since semiconductor devices are getting smaller, self-heating effects have become more important. Self-heating increases the temperature of the devices and results in variations in the electrical properties of the circuit in which these devices are used. Hence, it is important to accurately characterize the self-heating effects and develop reliable models, so that these effects can be taken into consideration in the simulations during the design process. This work deals with the development of the Vertical Bipolar Inter-Company (VBIC) model parameters to characterize self-heating in SOI SiGe transistors which have been fabricated by National Semiconductors (NSC). The distributed nature of thermal impedance of the wafer has been studied. The dependence of thermal resistance on the power dissipation has also been verified by DC characterization results. The time domain, DC and frequency domain measurements provide similar results for thermal resistance. The thermal resistance varies from 2400 K/W to 4700 K/W for a 0.25x20 [mu]m2 device manufactured by NSC.
Sige Heterojunction Bipolar Transistors
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Author : Peter Ashburn
language : en
Publisher: John Wiley & Sons
Release Date : 2004-02-06
Sige Heterojunction Bipolar Transistors written by Peter Ashburn and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004-02-06 with Technology & Engineering categories.
SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Chemical Abstracts
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Author :
language : en
Publisher:
Release Date : 2002
Chemical Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Chemistry categories.
American Doctoral Dissertations
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Author :
language : en
Publisher:
Release Date : 1997
American Doctoral Dissertations written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Dissertation abstracts categories.
Compact Modeling
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Author : Gennady Gildenblat
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-06-22
Compact Modeling written by Gennady Gildenblat and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-06-22 with Technology & Engineering categories.
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Essderc 98
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Author :
language : en
Publisher: Atlantica Séguier Frontières
Release Date : 1998
Essderc 98 written by and has been published by Atlantica Séguier Frontières this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Semiconductors categories.
Semiconductor Material And Device Characterization
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Author : Dieter K. Schroder
language : en
Publisher: John Wiley & Sons
Release Date : 2015-06-29
Semiconductor Material And Device Characterization written by Dieter K. Schroder and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-06-29 with Technology & Engineering categories.
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Scientific And Technical Aerospace Reports
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Author :
language : en
Publisher:
Release Date : 1987
Scientific And Technical Aerospace Reports written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987 with Aeronautics categories.
Technology Computer Aided Design
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Author : Chandan Kumar Sarkar
language : en
Publisher: CRC Press
Release Date : 2018-09-03
Technology Computer Aided Design written by Chandan Kumar Sarkar and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-09-03 with Technology & Engineering categories.
Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.
Comprehensive Dissertation Index
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Author :
language : en
Publisher:
Release Date : 1989
Comprehensive Dissertation Index written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1989 with Dissertations, Academic categories.