Essderc 98

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Essderc 98

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Author :
language : en
Publisher: Atlantica Séguier Frontières
Release Date : 1998

Essderc 98 written by and has been published by Atlantica Séguier Frontières this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Semiconductors categories.

High Dielectric Constant Materials

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Author : Howard Huff
language : en
Publisher: Springer Science & Business Media
Release Date : 2005

High Dielectric Constant Materials written by Howard Huff and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Science categories.

Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.

Essderc 98

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Author : André Touboul
language : en
Publisher:
Release Date : 1998

Essderc 98 written by André Touboul and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Semiconductors categories.

Silicon Germanium Strained Layers And Heterostructures

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Author : M. Willander
language : en
Publisher: Elsevier
Release Date : 2003-10-02

Silicon Germanium Strained Layers And Heterostructures written by M. Willander and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-10-02 with Technology & Engineering categories.

The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.* Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject* Appropriate for students and senior researchers

Simulation Of Semiconductor Processes And Devices 2001

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Author : Dimitris Tsoukalas
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Simulation Of Semiconductor Processes And Devices 2001 written by Dimitris Tsoukalas and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.

This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.

Semiconductor Silicon 2002

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Author : Howard R. Huff
language : en
Publisher: The Electrochemical Society
Release Date : 2002

Semiconductor Silicon 2002 written by Howard R. Huff and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Science categories.

Frontiers In Electronics With Cd Rom Proceedings Of The Wofe 04

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Author : Michael S Shur
language : en
Publisher: World Scientific
Release Date : 2006-08-10

Frontiers In Electronics With Cd Rom Proceedings Of The Wofe 04 written by Michael S Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-08-10 with Technology & Engineering categories.

Frontiers in Electronics reports on the most recent developments and future trends in the electronics and photonics industry. The issues address CMOS, SOI and wide band gap semiconductor technology, terahertz technology, and bioelectronics, providing a unique interdisciplinary overview of the key emerging issues.This volume accurately reflects the recent research and development trends: from pure research to research and development; and its contributors are leading experts in microelectronics, nanoelectronics, and nanophotonics from academia, industry, and government agencies.

Thin Film Transistors Polycrystalline Silicon Thin Film Transistors

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Author : Yue Kuo
language : en
Publisher: Springer Science & Business Media
Release Date : 2004

Thin Film Transistors Polycrystalline Silicon Thin Film Transistors written by Yue Kuo and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Technology & Engineering categories.

This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.

Nanotechnology And Nanoelectronics

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Author : Wolfgang Fahrner
language : en
Publisher: Springer Science & Business Media
Release Date : 2005-12-05

Nanotechnology And Nanoelectronics written by Wolfgang Fahrner and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-12-05 with Technology & Engineering categories.

Split a human hair thirty thousand times, and you have the equivalent of a nanometer. The aim of this work is to provide an introduction into nanotechnology for the s- entifically interested. However, such an enterprise requires a balance between comprehensibility and scientific accuracy. In case of doubt, preference is given to the latter. Much more than in microtechnology – whose fundamentals we assume to be known – a certain range of engineering and natural sciences are interwoven in nanotechnology. For instance, newly developed tools from mechanical engine- ing are essential in the production of nanoelectronic structures. Vice versa, - chanical shifts in the nanometer range demand piezoelectric-operated actuators. Therefore, special attention is given to a comprehensive presentation of the matter. In our time, it is no longer sufficient to simply explain how an electronic device operates; the materials and procedures used for its production and the measuring instruments used for its characterization are equally important. The main chapters as well as several important sections in this book end in an evaluation of future prospects. Unfortunately, this way of separating coherent - scription from reflection and speculation could not be strictly maintained. So- times, the complete description of a device calls for discussion of its inherent - tential; the hasty reader in search of the general perspective is therefore advised to study this work’s technical chapters as well.

High K Gate Dielectrics

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Author : Michel Houssa
language : en
Publisher: CRC Press
Release Date : 2003-12-01

High K Gate Dielectrics written by Michel Houssa and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-12-01 with Science categories.

The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ