Effectiveness Of Strain Solutions For Next Generation Mosfets
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Effectiveness Of Strain Solutions For Next Generation Mosfets
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Author : Nuo Xu
language : en
Publisher:
Release Date : 2012
Effectiveness Of Strain Solutions For Next Generation Mosfets written by Nuo Xu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with categories.
The conventional planar bulk MOSFET is difficult to scale down to sub-20nm gate length, due to the worsening performance variability and short channel effects. Thin body transistors, including Multiple-Gate (FinFET & Tri-Gate FET) and Fully Depleted SOI (FD-SOI) MOSFETs are anticipated to replace the current transistor architecture, and will be used in future CMOS technology nodes. Strained Silicon technology is widely used today to boost planar bulk transistor performance. Thus it's technically important to examine the strain-induced performance enhancement in these thin body transistors, for nanometer scale channel length. A comprehensive study on impact of channel stress on ultra-thin-body FD-SOI MOSFETs is presented. It's found that strain-induced mobility enhancement diminishes with Silicon body thickness scaling below 5nm for electrons, but not for holes. Strain-induced carrier transport enhancement is maintained with gate-length scaling. By applying forward back biasing (FBB) through the ultra-thin Buried Oxide layer, both carrier mobilities and their responses to strain get enhanced. For Multiple-gate FETs, the impact of performance enhancement through various types of stressors (including CESL, SiGe Source/Drain, Strained SOI and Metal Gate Last process) is studied, for different fin crystalline orientations and aspect ratios, to provide guidance for 3-D transistor design optimization.
Novel Applications Of Piezoelectric And Thermoelectric Materials
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Author : Rafael Vargas-Bernal
language : en
Publisher: BoD – Books on Demand
Release Date : 2024-01-31
Novel Applications Of Piezoelectric And Thermoelectric Materials written by Rafael Vargas-Bernal and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-01-31 with Science categories.
Piezoelectric and thermoelectric materials represent emerging cutting-edge technological materials for energy harvesting for high-value-added applications. Although these materials have been exhaustively exploited for decades, researchers around the world continue to find technological and scientific innovations that must be disseminated to the engineers of yesterday, today, and tomorrow. Piezoelectric materials, through mechanical stresses applied to them, are capable of generating electricity, while thermoelectric materials are capable of producing electricity thanks to the heat applied to them. Therefore, the direct application of these materials is in energy harvesting, which, together with the reduction of materials, leads them to portable and wearable functional applications. The purpose of this work is to disseminate some of the latest scientific and technological advances by different researchers around the world in the development of devices and applications based on these materials. The book compiles state-of-the-art fundamentals, current uses, as well as emerging applications of piezoelectric and thermoelectric materials. It is a source of inspiration for continued scientific research on the commercial, industrial, and military applications of these materials. Furthermore, it is a valuable and informative resource for undergraduate and graduate students, as well as experts and researchers in the field.
Strain Engineered Mosfets
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Author : C.K. Maiti
language : en
Publisher: CRC Press
Release Date : 2012-11-28
Strain Engineered Mosfets written by C.K. Maiti and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-11-28 with Technology & Engineering categories.
Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.
Ulsi Process Integration 6
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Author : C. Claeys
language : en
Publisher: The Electrochemical Society
Release Date : 2009-09
Ulsi Process Integration 6 written by C. Claeys and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-09 with Integrated circuits categories.
ULSI Process Integration 6 covers all aspects of process integration. Sections are devoted to 1) Device Technologies, 2) Front-end-of-line integration (gate stacks, shallow junctions, dry etching, etc.), 3) Back-end-of-line integration (CMP, low-k, Cu interconnect, air-gaps, 3D packaging, etc.), 4) Alternative channel technologies (Ge, III-V, hybrid integration), and 5) Emerging technologies (CNT, graphene, polymer electronics, nanotubes).
Microelectronics Technology And Devices Sbmicro 2009
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Author : Davies William de Lima Monteiro
language : en
Publisher: The Electrochemical Society
Release Date : 2009-08
Microelectronics Technology And Devices Sbmicro 2009 written by Davies William de Lima Monteiro and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-08 with Science categories.
This issue of ECS Transactions features eight invited and sixty-seven regular papers on technology, devices, systems, optoelectronics, modeling and characterization; all either directly or indirectly related to microelectronics. The topics presented herein reveal the multidisciplinary character of this field, which definitely incites the highly cooperative trace of human nature.
Microelectronics Technology And Devices Sbmicro 2008
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Author : Jacobus W. Swart
language : en
Publisher: The Electrochemical Society
Release Date : 2008-08
Microelectronics Technology And Devices Sbmicro 2008 written by Jacobus W. Swart and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-08 with Science categories.
The SBMicro symposium is a forum dedicated to fabrication and modeling of microsystems, integrated circuits and devices. The goal of the symposium is to bring together researchers in the areas of processing, materials, characterization, modeling and TCAD of integrated circuits, microsensors, microactuators and MEMS. This issue of ECS Transactions contains the papers presented at the 2008 conference.
Silicon On Insulator Technology And Devices 14
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Author : Yasuhisa Omura
language : en
Publisher: The Electrochemical Society
Release Date : 2009
Silicon On Insulator Technology And Devices 14 written by Yasuhisa Omura and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with Semiconductors categories.
This issue of ECS Transactions contains papers on silicon-on-insulator subjects including devices, device physics, modelling, simulations, microelectronics, photonics, nano-technology, integrated circuits, radiation hardness, material characterization, reliability, and sensors
Sige Ge And Related Compounds 6 Materials Processing And Devices
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Author : D. Harame
language : en
Publisher: The Electrochemical Society
Release Date :
Sige Ge And Related Compounds 6 Materials Processing And Devices written by D. Harame and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on with categories.
Strain Engineered Mosfets
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Author : C.K. Maiti
language : en
Publisher: CRC Press
Release Date : 2018-10-03
Strain Engineered Mosfets written by C.K. Maiti and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-03 with Technology & Engineering categories.
Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.
Electrical And Electronic Devices Circuits And Materials
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Author : Suman Lata Tripathi
language : en
Publisher: John Wiley & Sons
Release Date : 2021-03-24
Electrical And Electronic Devices Circuits And Materials written by Suman Lata Tripathi and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-03-24 with Technology & Engineering categories.
The increasing demand for electronic devices for private and industrial purposes lead designers and researchers to explore new electronic devices and circuits that can perform several tasks efficiently with low IC area and low power consumption. In addition, the increasing demand for portable devices intensifies the call from industry to design sensor elements, an efficient storage cell, and large capacity memory elements. Several industry-related issues have also forced a redesign of basic electronic components for certain specific applications. The researchers, designers, and students working in the area of electronic devices, circuits, and materials sometimesneed standard examples with certain specifications. This breakthrough work presents this knowledge of standard electronic device and circuit design analysis, including advanced technologies and materials. This outstanding new volume presents the basic concepts and fundamentals behind devices, circuits, and systems. It is a valuable reference for the veteran engineer and a learning tool for the student, the practicing engineer, or an engineer from another field crossing over into electrical engineering. It is a must-have for any library.