Strain Engineered Mosfets
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Strain Engineered Mosfets
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Author : C.K. Maiti
language : en
Publisher: CRC Press
Release Date : 2018-10-03
Strain Engineered Mosfets written by C.K. Maiti and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-03 with Technology & Engineering categories.
Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.
Advanced Nanoscale Mosfet Architectures
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Author : Kalyan Biswas
language : en
Publisher: John Wiley & Sons
Release Date : 2024-07-03
Advanced Nanoscale Mosfet Architectures written by Kalyan Biswas and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-07-03 with Technology & Engineering categories.
Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.
Electrical And Electronic Devices Circuits And Materials
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Author : Suman Lata Tripathi
language : en
Publisher: CRC Press
Release Date : 2021-03-15
Electrical And Electronic Devices Circuits And Materials written by Suman Lata Tripathi and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-03-15 with Technology & Engineering categories.
The increasing demand in home and industry for electronic devices has encouraged designers and researchers to investigate new devices and circuits using new materials that can perform several tasks efficiently with low IC (integrated circuit) area and low power consumption. Furthermore, the increasing demand for portable devices intensifies the search to design sensor elements, an efficient storage cell, and large-capacity memory elements. Electrical and Electronic Devices, Circuits and Materials: Design and Applications will assist the development of basic concepts and fundamentals behind devices, circuits, materials, and systems. This book will allow its readers to develop their understanding of new materials to improve device performance with even smaller dimensions and lower costs. Additionally, this book covers major challenges in MEMS (micro-electromechanical system)-based device and thin-film fabrication and characterization, including their applications in different fields such as sensors, actuators, and biomedical engineering. Key Features: Assists researchers working on devices and circuits to correlate their work with other requirements of advanced electronic systems. Offers guidance for application-oriented electrical and electronic device and circuit design for future energy-efficient systems. Encourages awareness of the international standards for electrical and electronic device and circuit design. Organized into 23 chapters, Electrical and Electronic Devices, Circuits and Materials: Design and Applications will create a foundation to generate new electrical and electronic devices and their applications. It will be of vital significance for students and researchers seeking to establish the key parameters for future work.
Hot Carrier Reliability Of Strain Engineered Mosfets
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Author : David Quest Kelly
language : en
Publisher:
Release Date : 2003
Hot Carrier Reliability Of Strain Engineered Mosfets written by David Quest Kelly and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with categories.
Fundamentals Of Iii V Semiconductor Mosfets
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Author : Serge Oktyabrsky
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-03-16
Fundamentals Of Iii V Semiconductor Mosfets written by Serge Oktyabrsky and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-03-16 with Technology & Engineering categories.
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Strained Si Heterostructure Field Effect Devices
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Author : C.K Maiti
language : en
Publisher: CRC Press
Release Date : 2007-01-11
Strained Si Heterostructure Field Effect Devices written by C.K Maiti and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-01-11 with Science categories.
A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi
Field Effect Transistors A Comprehensive Overview
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Author : Pouya Valizadeh
language : en
Publisher: John Wiley & Sons
Release Date : 2016-02-01
Field Effect Transistors A Comprehensive Overview written by Pouya Valizadeh and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-02-01 with Technology & Engineering categories.
This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field. It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book contains six chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variations and novel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards of heteroepitaxy. Finally, Chapter 6 examines FETs at molecular scales. Links the discussion of contemporary transistor devices to physical processes Material has been class-tested in undergraduate and graduate courses on the design of integrated circuit components taught by the author Contains examples and end-of-chapter problems Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies is a reference for senior undergraduate / graduate students and professional engineers needing insight into physics of operation of modern FETs. Pouya Valizadeh is Associate Professor in the Department of Electrical and Computer Engineering at Concordia University in Quebec, Canada. He received B.S. and M.S. degrees with honors from the University of Tehran and Ph.D. degree from The University of Michigan (Ann Arbor) all in Electrical Engineering in 1997, 1999, and 2005, respectively. Over the past decade, Dr. Valizadeh has taught numerous sections of five different courses covering topics such as semiconductor process technology, semiconductor materials and their properties, advanced solid state devices, transistor design for modern CMOS technology, and high speed transistors.
Technology Computer Aided Design For Si Sige And Gaas Integrated Circuits
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Author : G.A. Armstrong
language : en
Publisher: IET
Release Date : 2007-11-30
Technology Computer Aided Design For Si Sige And Gaas Integrated Circuits written by G.A. Armstrong and has been published by IET this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-11-30 with Computers categories.
The first book to deal with a broad spectrum of process and device design, and modeling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-development engineers and scientists involved in microelectronics technology and device design via Technology CAD, and TCAD engineers and developers.
Silicon Nanomembranes
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Author : John A. Rogers
language : en
Publisher: John Wiley & Sons
Release Date : 2016-08-08
Silicon Nanomembranes written by John A. Rogers and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-08-08 with Technology & Engineering categories.
Edited by the leaders in the fi eld, with chapters from highly renowned international researchers, this is the fi rst coherent overview of the latest in silicon nanomembrane research. As such, it focuses on the fundamental and applied aspects of silicon nanomembranes, ranging from synthesis and manipulation to manufacturing, device integration and system level applications, including uses in bio-integrated electronics, three-dimensional integrated photonics, solar cells, and transient electronics. The first part describes in detail the fundamental physics and materials science involved, as well as synthetic approaches and assembly and manufacturing strategies, while the second covers the wide range of device applications and system level demonstrators already achieved, with examples taken from electronics and photonics and from biomedicine and energy.
Sige And Ge
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Author : David Louis Harame
language : en
Publisher: The Electrochemical Society
Release Date : 2006
Sige And Ge written by David Louis Harame and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Science categories.
The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.