Field Effect Transistors A Comprehensive Overview

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Field Effect Transistors A Comprehensive Overview

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Author : Pouya Valizadeh
language : en
Publisher: John Wiley & Sons
Release Date : 2016-02-01

Field Effect Transistors A Comprehensive Overview written by Pouya Valizadeh and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-02-01 with Technology & Engineering categories.

This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field. It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book contains six chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variations and novel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards of heteroepitaxy. Finally, Chapter 6 examines FETs at molecular scales. Links the discussion of contemporary transistor devices to physical processes Material has been class-tested in undergraduate and graduate courses on the design of integrated circuit components taught by the author Contains examples and end-of-chapter problems Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies is a reference for senior undergraduate / graduate students and professional engineers needing insight into physics of operation of modern FETs. Pouya Valizadeh is Associate Professor in the Department of Electrical and Computer Engineering at Concordia University in Quebec, Canada. He received B.S. and M.S. degrees with honors from the University of Tehran and Ph.D. degree from The University of Michigan (Ann Arbor) all in Electrical Engineering in 1997, 1999, and 2005, respectively. Over the past decade, Dr. Valizadeh has taught numerous sections of five different courses covering topics such as semiconductor process technology, semiconductor materials and their properties, advanced solid state devices, transistor design for modern CMOS technology, and high speed transistors.

Field Effect Transistors A Comprehensive Overview

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Author : Pouya Valizadeh
language : en
Publisher: John Wiley & Sons
Release Date : 2016-02-23

Field Effect Transistors A Comprehensive Overview written by Pouya Valizadeh and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-02-23 with Technology & Engineering categories.

This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field. It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book contains six chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variations and novel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards of heteroepitaxy. Finally, Chapter 6 examines FETs at molecular scales. Links the discussion of contemporary transistor devices to physical processes Material has been class-tested in undergraduate and graduate courses on the design of integrated circuit components taught by the author Contains examples and end-of-chapter problems Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies is a reference for senior undergraduate / graduate students and professional engineers needing insight into physics of operation of modern FETs. Pouya Valizadeh is Associate Professor in the Department of Electrical and Computer Engineering at Concordia University in Quebec, Canada. He received B.S. and M.S. degrees with honors from the University of Tehran and Ph.D. degree from The University of Michigan (Ann Arbor) all in Electrical Engineering in 1997, 1999, and 2005, respectively. Over the past decade, Dr. Valizadeh has taught numerous sections of five different courses covering topics such as semiconductor process technology, semiconductor materials and their properties, advanced solid state devices, transistor design for modern CMOS technology, and high speed transistors.

Different Types Of Field Effect Transistors

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Author : Momčilo Pejović
language : en
Publisher: BoD – Books on Demand
Release Date : 2017-06-07

Different Types Of Field Effect Transistors written by Momčilo Pejović and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-06-07 with Technology & Engineering categories.

In 1959, Atalla and Kahng at Bell Labs produced the first successful field-effect transistor (FET), which had been long anticipated by other researchers by overcoming the "surface states" that blocked electric fields from penetrating into the semiconductor material. Very quickly, they became the fundamental basis of digital electronic circuits. Up to this point, there are more than 20 different types of field-effect transistors that are incorporated in various applications found in everyday's life. Based on this fact, this book was designed to overview some of the concepts regarding FETs that are currently used as well as some concepts that are still being developed.

Advanced Ultra Low Power Semiconductor Devices

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Author : Shubham Tayal
language : en
Publisher: John Wiley & Sons
Release Date : 2023-11-30

Advanced Ultra Low Power Semiconductor Devices written by Shubham Tayal and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-11-30 with Technology & Engineering categories.

ADVANCED ULTRA LOW-POWER SEMICONDUCTOR DEVICES Written and edited by a team of experts in the field, this important new volume broadly covers the design and applications of metal oxide semiconductor field effect transistors. This outstanding new volume offers a comprehensive overview of cutting-edge semiconductor components tailored for ultra-low power applications. These components, pivotal to the foundation of electronic devices, play a central role in shaping the landscape of electronics. With a focus on emerging low-power electronic devices and their application across domains like wireless communication, biosensing, and circuits, this book presents an invaluable resource for understanding this dynamic field. Bringing together experts and researchers from various facets of the VLSI domain, the book addresses the challenges posed by advanced low-power devices. This collaborative effort aims to propel engineering innovations and refine the practical implementation of these technologies. Specific chapters delve into intricate topics such as Tunnel FET, negative capacitance FET device circuits, and advanced FETs tailored for diverse circuit applications. Beyond device-centric discussions, the book delves into the design intricacies of low-power memory systems, the fascinating realm of neuromorphic computing, and the pivotal issue of thermal reliability. Authors provide a robust foundation in device physics and circuitry while also exploring novel materials and architectures like transistors built on pioneering channel/dielectric materials. This exploration is driven by the need to achieve both minimal power consumption and ultra-fast switching speeds, meeting the relentless demands of the semiconductor industry. The book’s scope encompasses concepts like MOSFET, FinFET, GAA MOSFET, the 5-nm and 7-nm technology nodes, NCFET, ferroelectric materials, subthreshold swing, high-k materials, as well as advanced and emerging materials pivotal for the semiconductor industry’s future.

Organic Field Effect Transistors

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Author : Zhenan Bao
language : en
Publisher: CRC Press
Release Date : 2018-10-03

Organic Field Effect Transistors written by Zhenan Bao and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-03 with Technology & Engineering categories.

The remarkable development of organic thin film transistors (OTFTs) has led to their emerging use in active matrix flat-panel displays, radio frequency identification cards, and sensors. Exploring one class of OTFTs, Organic Field-Effect Transistors provides a comprehensive, multidisciplinary survey of the present theory, charge transport studies, synthetic methodology, materials characterization, and current applications of organic field-effect transistors (OFETs). Covering various aspects of OFETs, the book begins with a theoretical description of charge transport in organic semiconductors at the molecular level. It then discusses the current understanding of charge transport in single-crystal devices, small molecules and oligomers, conjugated polymer devices, and charge injection issues in organic transistors. After describing the design rationales and synthetic methodologies used for organic semiconductors and dielectric materials, the book provides an overview of a variety of characterization techniques used to probe interfacial ordering, microstructure, molecular packing, and orientation crucial to device performance. It also describes the different processing techniques for molecules deposited by vacuum and solution, followed by current technological examples that employ OTFTs in their operation. Featuring respected contributors from around the world, this thorough, up-to-date volume presents both the theory behind OFETs and the latest applications of this promising technology.

Fundamentals Of Nanoscaled Field Effect Transistors

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Author : Amit Chaudhry
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-23

Fundamentals Of Nanoscaled Field Effect Transistors written by Amit Chaudhry and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-23 with Technology & Engineering categories.

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

Modern Microwave Transistors

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Author : Frank Schwierz
language : en
Publisher: Wiley-Interscience
Release Date : 2003

Modern Microwave Transistors written by Frank Schwierz and has been published by Wiley-Interscience this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with Technology & Engineering categories.

Comprehensive and up-to-date coverage of currently used transistors for commercial and military applications. Authors are recognized experts with previous publications. Updated descriptions of state-of-the-art devices available on Wiley Web site.

Modeling Nanowire And Double Gate Junctionless Field Effect Transistors

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Author : Farzan Jazaeri
language : en
Publisher: Cambridge University Press
Release Date : 2018-03

Modeling Nanowire And Double Gate Junctionless Field Effect Transistors written by Farzan Jazaeri and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-03 with Science categories.

A detailed introduction to the design, modeling, and operation of junctionless field effect transistors (FETs), including advantages and limitations.

Field Effect Transistor Applications

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Author : William Gosling
language : en
Publisher:
Release Date : 1964

Field Effect Transistor Applications written by William Gosling and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1964 with Field-effect transistors categories.

Organic Transistor Devices For In Vitro Electrophysiological Applications

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Author : Andrea Spanu
language : en
Publisher: Springer
Release Date : 2016-01-22

Organic Transistor Devices For In Vitro Electrophysiological Applications written by Andrea Spanu and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-01-22 with Technology & Engineering categories.

This thesis reports on a novel system for extracellular recordings of the activity of excitable cells, which relies on an organic, charge-modulated field-effect transistor (FET) called OCMFET. The book shows how, thanks to the intrinsic biocompatibility, lightness, and inexpensiveness of the material used, this new system is able to overcome several problems typical of of “classic” electronic and bioelectronic. It provides a full description of the system, together with a comprehensive report of the successful experimental trials carried out on both cardiac and nerve cells, and a concise yet comprehensive overview of bioelectronic interfaces and organic sensors for electrophysiological applications.