Advanced Nanoscale Mosfet Architectures
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Advanced Nanoscale Mosfet Architectures
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Author : Kalyan Biswas
language : en
Publisher: John Wiley & Sons
Release Date : 2024-07-03
Advanced Nanoscale Mosfet Architectures written by Kalyan Biswas and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-07-03 with Technology & Engineering categories.
Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.
Advanced Fabrication Techniques For Designing Nanoscale Mosfet
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Author : Suei Huey Wong
language : en
Publisher:
Release Date : 2007
Advanced Fabrication Techniques For Designing Nanoscale Mosfet written by Suei Huey Wong and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Metal oxide semiconductor field-effect transistors categories.
Reliability Of High Mobility Sige Channel Mosfets For Future Cmos Applications
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Author : Jacopo Franco
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-10-19
Reliability Of High Mobility Sige Channel Mosfets For Future Cmos Applications written by Jacopo Franco and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-10-19 with Technology & Engineering categories.
Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.
Nanoscale Field Effect Transistors Emerging Applications
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Author : Ekta Goel, Archana Pandey
language : en
Publisher: Bentham Science Publishers
Release Date : 2023-12-20
Nanoscale Field Effect Transistors Emerging Applications written by Ekta Goel, Archana Pandey and has been published by Bentham Science Publishers this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-12-20 with Technology & Engineering categories.
Nanoscale Field Effect Transistors: Emerging Applications is a comprehensive guide to understanding, simulating, and applying nanotechnology for design and development of specialized transistors. This book provides in-depth information on the modeling, simulation, characterization, and fabrication of semiconductor FET transistors. The book contents are structured into chapters that explain concepts with simple language and scientific references. The core of the book revolves around the fundamental physics that underlie the design of solid-state nanostructures and the optimization of these nanoscale devices for real-time applications. Readers will learn how to achieve superior performance in terms of reduced size and weight, enhanced subthreshold characteristics, improved switching efficiency, and minimal power consumption. Key Features: Quick summaries: Each chapter provides an introduction and summary to explain concepts in a concise manner. In-Depth Analysis: This book provides an extensive exploration of the theory and practice of nanoscale materials and devices, offering a detailed understanding of the technical aspects of Nano electronic FET transistors. Multidisciplinary Approach: It discusses various aspects of nanoscale materials and devices for applications such as quantum computation, biomedical applications, energy generation and storage, environmental protection, and more. It showcases how nanoscale FET devices are reshaping multiple industries. References: Chapters include references that encourage advanced readers to further explore key topics. Designed for a diverse audience, this book caters to students, academics and advanced readers interested in learning about Nano FET devices. Readership Students, academics and advanced readers
Fundamentals Of Nanoscaled Field Effect Transistors
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Author : Amit Chaudhry
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-23
Fundamentals Of Nanoscaled Field Effect Transistors written by Amit Chaudhry and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-23 with Technology & Engineering categories.
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Springer Handbook Of Semiconductor Devices
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Author : Massimo Rudan
language : en
Publisher: Springer Nature
Release Date : 2022-11-10
Springer Handbook Of Semiconductor Devices written by Massimo Rudan and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-11-10 with Technology & Engineering categories.
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Carrier Transport In Nanoscale Mos Transistors
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Author : Hideaki Tsuchiya
language : en
Publisher: John Wiley & Sons
Release Date : 2017-05-02
Carrier Transport In Nanoscale Mos Transistors written by Hideaki Tsuchiya and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-05-02 with Technology & Engineering categories.
A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds
Characterization And Modeling Of Nanoscale Mosfet For Ultra Low Power Rf Ic Design
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Author : Maria-Anna Chalkiadaki
language : en
Publisher:
Release Date : 2016
Characterization And Modeling Of Nanoscale Mosfet For Ultra Low Power Rf Ic Design written by Maria-Anna Chalkiadaki and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016 with categories.
Mots-clés de l'autrice: Advanced CMOS ; Nanoscale Bulk MOSFET ; Low-Power ; Analytical Modeling ; Compact Modeling ; BSIM6 ; RF Small-Signal ; RF Noise ; Parameter Extraction ; IC Design Methodology.
Advanced Source Drain And Contact Design For Nanoscale Cmos
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Author : Reinaldo A. Vega
language : en
Publisher:
Release Date : 2010
Advanced Source Drain And Contact Design For Nanoscale Cmos written by Reinaldo A. Vega and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
Frontiers In Electronics Advanced Modeling Of Nanoscale Electron Devices
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Author : Benjamin Iniguez
language : en
Publisher: World Scientific
Release Date : 2014-01-10
Frontiers In Electronics Advanced Modeling Of Nanoscale Electron Devices written by Benjamin Iniguez and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-01-10 with Technology & Engineering categories.
This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear explanation of theapproaches used and the links with modeling techniques for either higher or lower levels.