Nanoscale Mos Transistors
DOWNLOAD
Download Nanoscale Mos Transistors PDF/ePub or read online books in Mobi eBooks. Click Download or Read Online button to get Nanoscale Mos Transistors book now. This website allows unlimited access to, at the time of writing, more than 1.5 million titles, including hundreds of thousands of titles in various foreign languages. If the content not found or just blank you must refresh this page
Nanoscale Mos Transistors
DOWNLOAD
Author : David Esseni
language : en
Publisher: Cambridge University Press
Release Date : 2011-01-20
Nanoscale Mos Transistors written by David Esseni and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-01-20 with Technology & Engineering categories.
Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results
Nanoscale Mos Transistors
DOWNLOAD
Author : David Esseni
language : en
Publisher:
Release Date : 2014-05-14
Nanoscale Mos Transistors written by David Esseni and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-05-14 with Electron transport categories.
Provides the theoretical background and the physical insight needed to understand new and future developments in nanoscale CMOS technologies.
Carrier Transport In Nanoscale Mos Transistors
DOWNLOAD
Author : Hideaki Tsuchiya
language : en
Publisher: John Wiley & Sons
Release Date : 2017-05-02
Carrier Transport In Nanoscale Mos Transistors written by Hideaki Tsuchiya and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-05-02 with Technology & Engineering categories.
A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds
Nanoscale Transistors
DOWNLOAD
Author : Mark Lundstrom
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-06-18
Nanoscale Transistors written by Mark Lundstrom and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-06-18 with Technology & Engineering categories.
To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules
Advanced Nanoscale Mosfet Architectures
DOWNLOAD
Author : Kalyan Biswas
language : en
Publisher: John Wiley & Sons
Release Date : 2024-07-03
Advanced Nanoscale Mosfet Architectures written by Kalyan Biswas and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-07-03 with Technology & Engineering categories.
Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.
Fundamentals Of Nanotransistors
DOWNLOAD
Author : Mark Lundstrom
language : en
Publisher: World Scientific Publishing Company
Release Date : 2017-07-11
Fundamentals Of Nanotransistors written by Mark Lundstrom and has been published by World Scientific Publishing Company this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-07-11 with Technology & Engineering categories.
The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, “bottom-up approach” that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits. Complemented with online lecture by Prof Lundstrom: nanoHUB-U Nanoscale Transistor Contents:MOSFET Fundamentals:OverviewThe Transistor as a Black BoxThe MOSFET: A Barrier-Controlled DeviceMOSFET IV: Traditional ApproachMOSFET IV: The Virtual Source ModelMOS Electrostatics:Poisson Equation and the Depletion ApproximationGate Voltage and Surface PotentialMobile Charge: Bulk MOSMobile Charge: Extremely Thin SOI2D MOS ElectrostaticsThe VS Model RevisitedThe Ballistic MOSFET:The Landauer Approach to TransportThe Ballistic MOSFETThe Ballistic Injection VelocityConnecting the Ballistic and VS ModelsTransmission Theory of the MOSFET:Carrier Scattering and TransmissionTransmission Theory of the MOSFETConnecting the Transmission and VS ModelsVS Characterization of Transport in NanotransistorsLimits and Limitations Readership: Any student and professional with an undergraduate degree in the physical sciences or engineering.
Fundamentals Of Nanoscaled Field Effect Transistors
DOWNLOAD
Author : Amit Chaudhry
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-23
Fundamentals Of Nanoscaled Field Effect Transistors written by Amit Chaudhry and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-23 with Technology & Engineering categories.
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Modeling Nanoscale Quasi Ballistic Mos Transistors
DOWNLOAD
Author : Anurag Mangla
language : en
Publisher:
Release Date : 2014
Modeling Nanoscale Quasi Ballistic Mos Transistors written by Anurag Mangla and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.
Fundamentals Of Nanotransistors
DOWNLOAD
Author : Mark S. Lundstrom
language : en
Publisher:
Release Date : 2017
Fundamentals Of Nanotransistors written by Mark S. Lundstrom and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with Electronic books categories.
The Source Drain Engineering Of Nanoscale Germanium Based Mos Devices
DOWNLOAD
Author : Zhiqiang Li
language : en
Publisher: Springer
Release Date : 2016-03-24
The Source Drain Engineering Of Nanoscale Germanium Based Mos Devices written by Zhiqiang Li and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-03-24 with Technology & Engineering categories.
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600°C and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
