The Source Drain Engineering Of Nanoscale Germanium Based Mos Devices
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The Source Drain Engineering Of Nanoscale Germanium Based Mos Devices
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Author : Zhiqiang Li
language : en
Publisher: Springer
Release Date : 2016-03-24
The Source Drain Engineering Of Nanoscale Germanium Based Mos Devices written by Zhiqiang Li and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-03-24 with Technology & Engineering categories.
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600°C and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
Stress And Strain Engineering At Nanoscale In Semiconductor Devices
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Author : Chinmay K. Maiti
language : en
Publisher: CRC Press
Release Date : 2021-06-29
Stress And Strain Engineering At Nanoscale In Semiconductor Devices written by Chinmay K. Maiti and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-06-29 with Science categories.
Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.
Carrier Transport In Nanoscale Mos Transistors
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Author : Hideaki Tsuchiya
language : en
Publisher: John Wiley & Sons
Release Date : 2017-06-13
Carrier Transport In Nanoscale Mos Transistors written by Hideaki Tsuchiya and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-06-13 with Technology & Engineering categories.
A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds
Nanoscale Mos Transistors
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Author : David Esseni
language : en
Publisher: Cambridge University Press
Release Date : 2011-01-20
Nanoscale Mos Transistors written by David Esseni and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-01-20 with Technology & Engineering categories.
Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results
Nano Cmos Circuit And Physical Design
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Author : Ban Wong
language : en
Publisher: John Wiley & Sons
Release Date : 2005-04-08
Nano Cmos Circuit And Physical Design written by Ban Wong and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-04-08 with Technology & Engineering categories.
Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation.
Safety Security And Reliability Of Robotic Systems
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Author : Brij B. Gupta
language : en
Publisher: CRC Press
Release Date : 2020-12-30
Safety Security And Reliability Of Robotic Systems written by Brij B. Gupta and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-12-30 with Technology & Engineering categories.
With the increasing demand of robots for industrial and domestic use, it becomes indispensable to ensure their safety, security, and reliability. Safety, Security and Reliability of Robotic Systems: Algorithms, Applications, and Technologies provides a broad and comprehensive coverage of the evolution of robotic systems, as well as industrial statistics and future forecasts. First, it analyzes the safety-related parameters of these systems. Then, it covers security attacks and related countermeasures, and how to establish reliability in these systems. The later sections of the book then discuss various applications of these systems in modern industrial and domestic settings. By the end of this book, you will be familiarized with the theoretical frameworks, algorithms, applications, technologies, and empirical research findings on the safety, security, and reliability of robotic systems, while the book’s modular structure and comprehensive material will keep you interested and involved throughout. This book is an essential resource for students, professionals, and entrepreneurs who wish to understand the safe, secure, and reliable use of robotics in real-world applications. It is edited by two specialists in the field, with chapter contributions from an array of experts on robotics systems and applications.
Tunneling Field Effect Transistors
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Author : T. S. Arun Samuel
language : en
Publisher: CRC Press
Release Date : 2023-06-08
Tunneling Field Effect Transistors written by T. S. Arun Samuel and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-06-08 with Technology & Engineering categories.
This book will give insight into emerging semiconductor devices from their applications in electronic circuits, which form the backbone of electronic equipment. It provides desired exposure to the ever-growing field of low-power electronic devices and their applications in nanoscale devices, memory design, and biosensing applications. Tunneling Field Effect Transistors: Design, Modeling and Applications brings researchers and engineers from various disciplines of the VLSI domain to together tackle the emerging challenges in the field of nanoelectronics and applications of advanced low-power devices. The book begins by discussing the challenges of conventional CMOS technology from the perspective of low-power applications, and it also reviews the basic science and developments of subthreshold swing technology and recent advancements in the field. The authors discuss the impact of semiconductor materials and architecture designs on TFET devices and the performance and usage of FET devices in various domains such as nanoelectronics, Memory Devices, and biosensing applications. They also cover a variety of FET devices, such as MOSFETs and TFETs, with various structures based on the tunneling transport phenomenon. The contents of the book have been designed and arranged in such a way that Electrical Engineering students, researchers in the field of nanodevices and device-circuit codesign, as well as industry professionals working in the domain of semiconductor devices, will find the material useful and easy to follow.
Mechanical Stress On The Nanoscale
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Author : Margrit Hanbücken
language : en
Publisher: John Wiley & Sons
Release Date : 2011-12-07
Mechanical Stress On The Nanoscale written by Margrit Hanbücken and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-12-07 with Technology & Engineering categories.
Bringing together experts from the various disciplines involved, this first comprehensive overview of the current level of stress engineering on the nanoscale is unique in combining the theoretical fundamentals with simulation methods, model systems and characterization techniques. Essential reading for researchers in microelectronics, optoelectronics, sensing, and photonics.
Advanced Nanoscale Ulsi Interconnects Fundamentals And Applications
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Author : Yosi Shacham-Diamand
language : en
Publisher: Springer Science & Business Media
Release Date : 2009-09-19
Advanced Nanoscale Ulsi Interconnects Fundamentals And Applications written by Yosi Shacham-Diamand and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-09-19 with Science categories.
In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.
Nanoscale Devices Materials And Biological Systems
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Author : M. Cahay
language : en
Publisher:
Release Date : 2005
Nanoscale Devices Materials And Biological Systems written by M. Cahay and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Science categories.