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Stress And Strain Engineering At Nanoscale In Semiconductor Devices


Stress And Strain Engineering At Nanoscale In Semiconductor Devices
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Stress And Strain Engineering At Nanoscale In Semiconductor Devices


Stress And Strain Engineering At Nanoscale In Semiconductor Devices
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Author : Chinmay K. Maiti
language : en
Publisher: CRC Press
Release Date : 2021-06-29

Stress And Strain Engineering At Nanoscale In Semiconductor Devices written by Chinmay K. Maiti and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-06-29 with Science categories.


Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.



Advanced Nanoscale Mosfet Architectures


Advanced Nanoscale Mosfet Architectures
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Author : Kalyan Biswas
language : en
Publisher: John Wiley & Sons
Release Date : 2024-05-29

Advanced Nanoscale Mosfet Architectures written by Kalyan Biswas and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-05-29 with Technology & Engineering categories.


Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.



Strain Effect In Semiconductors


Strain Effect In Semiconductors
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Author : Yongke Sun
language : en
Publisher: Springer Science & Business Media
Release Date : 2009-11-14

Strain Effect In Semiconductors written by Yongke Sun and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-11-14 with Technology & Engineering categories.


Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.



Electrical And Electronic Devices Circuits And Materials


Electrical And Electronic Devices Circuits And Materials
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Author : Suman Lata Tripathi
language : en
Publisher: CRC Press
Release Date : 2021-03-15

Electrical And Electronic Devices Circuits And Materials written by Suman Lata Tripathi and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-03-15 with Technology & Engineering categories.


The increasing demand in home and industry for electronic devices has encouraged designers and researchers to investigate new devices and circuits using new materials that can perform several tasks efficiently with low IC (integrated circuit) area and low power consumption. Furthermore, the increasing demand for portable devices intensifies the search to design sensor elements, an efficient storage cell, and large-capacity memory elements. Electrical and Electronic Devices, Circuits and Materials: Design and Applications will assist the development of basic concepts and fundamentals behind devices, circuits, materials, and systems. This book will allow its readers to develop their understanding of new materials to improve device performance with even smaller dimensions and lower costs. Additionally, this book covers major challenges in MEMS (micro-electromechanical system)-based device and thin-film fabrication and characterization, including their applications in different fields such as sensors, actuators, and biomedical engineering. Key Features: Assists researchers working on devices and circuits to correlate their work with other requirements of advanced electronic systems. Offers guidance for application-oriented electrical and electronic device and circuit design for future energy-efficient systems. Encourages awareness of the international standards for electrical and electronic device and circuit design. Organized into 23 chapters, Electrical and Electronic Devices, Circuits and Materials: Design and Applications will create a foundation to generate new electrical and electronic devices and their applications. It will be of vital significance for students and researchers seeking to establish the key parameters for future work.



Engineering Applications Of Residual Stress Volume 8


Engineering Applications Of Residual Stress Volume 8
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Author : Tom Proulx
language : en
Publisher: Springer Science & Business Media
Release Date : 2011-06-10

Engineering Applications Of Residual Stress Volume 8 written by Tom Proulx and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-06-10 with Technology & Engineering categories.


Engineering Applications of Residual Stress represents one of eight volumes of technical papers presented at the Society for Experimental Mechanics Annual Conference on Experimental and Applied Mechanics, held at Uncasville, Connecticut, June 13-16, 2011. The full set of proceedings also includes volumes on Dynamic Behavior of Materials, Mechanics of Biological Systems and Materials, Mechanics of Time-Dependent Materials and Processes in Conventional and Multifunctional Materials, MEMS and Nanotechnology; Optical Measurements, Modeling and, Metrology; Experimental and Applied Mechanics, and Thermomechanics and Infra-Red Imaging.



China Semiconductor Technology International Conference 2010 Cstic 2010


China Semiconductor Technology International Conference 2010 Cstic 2010
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Author : Han-Ming Wu
language : en
Publisher: The Electrochemical Society
Release Date : 2010-03

China Semiconductor Technology International Conference 2010 Cstic 2010 written by Han-Ming Wu and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-03 with Science categories.


Our mission is to provide a forum for world experts to discuss technologies, address the growing needs associated with silicon technology, and exchange their discoveries and solutions for current issues of high interest. We encourage collaboration, open discussion, and critical reviews at this conference. Furthermore, we hope that this conference will also provide collaborative opportunities for those who are interested in the semiconductor industry in Asia, particularly in China.



Mechanical Stress On The Nanoscale


Mechanical Stress On The Nanoscale
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Author : Margrit Hanbücken
language : en
Publisher: John Wiley & Sons
Release Date : 2011-12-07

Mechanical Stress On The Nanoscale written by Margrit Hanbücken and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-12-07 with Technology & Engineering categories.


Bringing together experts from the various disciplines involved, this first comprehensive overview of the current level of stress engineering on the nanoscale is unique in combining the theoretical fundamentals with simulation methods, model systems and characterization techniques. Essential reading for researchers in microelectronics, optoelectronics, sensing, and photonics.



An Assessment Of The National Institute Of Standards And Technology Materials Science And Engineering Laboratory


An Assessment Of The National Institute Of Standards And Technology Materials Science And Engineering Laboratory
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Author : National Research Council
language : en
Publisher: National Academies Press
Release Date : 2008-11-27

An Assessment Of The National Institute Of Standards And Technology Materials Science And Engineering Laboratory written by National Research Council and has been published by National Academies Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-11-27 with Technology & Engineering categories.


The Materials Science and Engineering Laboratory (MSEL) of the National Institute of Standards and Technology (NIST) works with industry, standards bodies, universities, and other government laboratories to improve the nation's measurements and standards infrastructure for materials. A panel of experts appointed by the National Research Council (NRC) assessed the four divisions of MSEL, by visiting these divisions and reviewing their activities. This book concludes that, for the selected portion of the MSEL programs reviewed, the staff, the projects, and many facilities are outstanding. The projects are clearly focused on the mission of MSEL. The facilities and equipment are rationally upgraded within budget constraints, with several facilities being unique; the funding provided through the America COMPETES Act of 2007 is being used effectively. Division chiefs and staff evinced high morale, attributable to several factors: clear definitions of expectations and of the processes for realizing them, strong support of the MSEL from NIST leadership and of NIST generally from the President and from the Congress (through the American Competitiveness Initiative and the America COMPETES Act), and positive feedback from customers.



Silicon Germanium Sige Nanostructures


Silicon Germanium Sige Nanostructures
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Author : Y. Shiraki
language : en
Publisher: Elsevier
Release Date : 2011-02-26

Silicon Germanium Sige Nanostructures written by Y. Shiraki and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-02-26 with Technology & Engineering categories.


Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. - Reviews the materials science of nanostructures and their properties and applications in different electronic devices - Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys - Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition



Semiconductor Strain Metrology


Semiconductor Strain Metrology
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Author : Terence K. S. Wong
language : en
Publisher: Bentham Science Publishers
Release Date : 2012

Semiconductor Strain Metrology written by Terence K. S. Wong and has been published by Bentham Science Publishers this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with Technology & Engineering categories.


This book surveys the major and newly developed techniques for semiconductor strain metrology. Semiconductor strain metrology has emerged in recent years as a topic of great interest to researchers involved in thin film and nanoscale device characterizati