Strain Effect In Semiconductors
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Strain Effect In Semiconductors
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Author : Yongke Sun
language : en
Publisher: Springer Science & Business Media
Release Date : 2009-11-14
Strain Effect In Semiconductors written by Yongke Sun and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-11-14 with Technology & Engineering categories.
Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.
Symmetry And Strain Induced Effects In Semiconductors
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Author : Gennadiĭ Levikovich Bir
language : en
Publisher: Halsted Press
Release Date : 1974-01-01
Symmetry And Strain Induced Effects In Semiconductors written by Gennadiĭ Levikovich Bir and has been published by Halsted Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1974-01-01 with Crystallography, Mathematical categories.
Symmetry And Strain Induced Effects In Semiconductors
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Author : Gennadij Levikovic Bir
language : en
Publisher:
Release Date : 1974
Symmetry And Strain Induced Effects In Semiconductors written by Gennadij Levikovic Bir and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1974 with Crystals categories.
Strain Induced Effects In Advanced Mosfets
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Author : Viktor Sverdlov
language : en
Publisher: Springer Science & Business Media
Release Date : 2011-01-06
Strain Induced Effects In Advanced Mosfets written by Viktor Sverdlov and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-01-06 with Technology & Engineering categories.
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
Polarization Effects In Semiconductors
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Author : Debdeep Jena
language : en
Publisher: Springer Science & Business Media
Release Date : 2008
Polarization Effects In Semiconductors written by Debdeep Jena and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Science categories.
Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.
Strain Effects On The Work Function Of An Organic Semiconductor
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Author :
language : en
Publisher:
Release Date : 2016
Strain Effects On The Work Function Of An Organic Semiconductor written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016 with categories.
Establishing fundamental relationships between strain and work function (WF) in organic semiconductors is important not only for understanding electrical properties of organic thin films, which are subject to both intrinsic and extrinsic strains, but also for developing flexible electronic devices. Here we investigate tensile and compressive strain effects on the WF of rubrene single crystals. Mechanical strain induced by thermal expansion mismatch between the substrate and rubrene is quantified by X-ray diffraction. The corresponding WF change is measured by scanning Kelvin probe microscopy. The WF of rubrene increases (decreases) significantly with in-plane tensile (compressive) strain, which agrees qualitatively with density functional theory calculations. An elastic-to-plastic transition, characterized by a steep rise of the WF, occurs at ~0.05% tensile strain along the rubrene [pi]-stacking direction. Lastly, the results provide the first concrete link between mechanical strain and WF of an organic semiconductor and have important implications for understanding the connection between structural and electronic disorder in soft organic electronic materials.
Stress And Strain Engineering At Nanoscale In Semiconductor Devices
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Author : Chinmay K. Maiti
language : en
Publisher: CRC Press
Release Date : 2021-06-29
Stress And Strain Engineering At Nanoscale In Semiconductor Devices written by Chinmay K. Maiti and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-06-29 with Science categories.
Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.
Electronic Raman Scattering As An Ultra Sensitive Probe Of Strain Effects In Semiconductors
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Author :
language : en
Publisher:
Release Date : 2015
Electronic Raman Scattering As An Ultra Sensitive Probe Of Strain Effects In Semiconductors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015 with categories.
In this study, the semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of strain in thin semiconductor epilayers can be measured using electronic Raman scattering. We applied this strain measurement technique to two different semiconductor alloy systems using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10-4. Comparing our strain sensitivity and signal strength in AlxGa1-xAs with those obtained using the industry-standard technique of phonon Raman scattering, we found that there was a sensitivity improvement of 200-fold and a signal enhancement of 4 × 103, thus obviating key constraints in semiconductor strain metrology.
Materials Science And Technology Strained Layer Superlattices
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Author :
language : en
Publisher: Academic Press
Release Date : 1991-02-20
Materials Science And Technology Strained Layer Superlattices written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991-02-20 with Technology & Engineering categories.
The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.
Compound Semiconductors Strained Layers And Devices
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Author : Suresh Jain
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-27
Compound Semiconductors Strained Layers And Devices written by Suresh Jain and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-27 with Technology & Engineering categories.
In recent years, extensive work has been done on strain, dislocations and mechanical properties of strained layers. Although it is not possible to describe all this work in a monograph of this size, Compound Semiconductors Strained Layers and Devices provides an overview with sufficient detail to cover all the essential aspects of recent developments in the field. The book concentrates on compound semiconductors with emphasis on wideband gap II-VI and III-Nitride semiconductors. GeSi strained layers are discussed for comparison to clarify the underlying physics. The effects of strain on band structure, transport, and optical properties of both the zinc blende and the wurtzite compound semiconductors are discussed, as are Piezoelectric Effects and Quantum Confined Stark Effects. Magnetic polarons in diluted II-VI magnetic polarons are also covered. Among the applications, blue and green LEDs and LDs and mid-IR LDs are included. A whole chapter is devoted to these devices. Another chapter examines transistors based on conventional III-V, II-VI and III-nitride semiconductors. The subject matter is treated at a level appropriate for students and senior researchers interested in material science, and in designing and modeling semiconductor devices. It will also be useful to engineers and material scientists concerned with the effects of strain on the mechanical properties of crystalline layers of any material.