Defects And Radiation Effects In Semiconductors 1978
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Impurities In Semiconductors
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Author : Victor I. Fistul
language : en
Publisher: CRC Press
Release Date : 2004-01-27
Impurities In Semiconductors written by Victor I. Fistul and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004-01-27 with Science categories.
Although there is a good deal of research concerning semiconductor impurities available, most publications on the subject are very specialized and very theoretical. Until now, the field lacked a text that described the current experimental data, applications, and theory concerning impurities in semiconductor physics. Impurities in Semicondu
Defects And Radiation Effects In Semiconductors 1978
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Author : J.H. Albany
language : en
Publisher:
Release Date : 1979
Defects And Radiation Effects In Semiconductors 1978 written by J.H. Albany and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1979 with categories.
Defects In Optoelectronic Materials
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Author : Kazumi Wada
language : en
Publisher: CRC Press
Release Date : 2022-09-16
Defects In Optoelectronic Materials written by Kazumi Wada and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-09-16 with Science categories.
Defects in Optoelectronic Materials bridges the gap between device process engineers and defect physicists by describing current problems in device processing and current understanding of these defects based on defect physics. The volume covers defects and their behaviors in epitaxial growth, in various processes such as plasma processing, deposition and implantation, and in device degradation. This book also provides graduate students cutting-edge information on devices and materials interaction.
Extended Defects In Semiconductors
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Author : D. B. Holt
language : en
Publisher: Cambridge University Press
Release Date : 2007-04-12
Extended Defects In Semiconductors written by D. B. Holt and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-04-12 with Science categories.
A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Physics Of Radiation Effects In Crystals
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Author : R.A. Johnson
language : en
Publisher: Elsevier
Release Date : 2012-12-02
Physics Of Radiation Effects In Crystals written by R.A. Johnson and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-02 with Science categories.
``Physics of Radiation Effects in Crystals'' is presented in two parts. The first part covers the general background and theory of radiation effects in crystals, including the theory describing the generation of crystal lattice defects by radiation, the kinetic approach to the study of the disposition of these defects and the effects of the diffusion of these defects on alloy compositions and phases. Specific problems of current interest are treated in the second part and include anisotropic dimensional changes in x-uranium, zirconium and graphite, acceleration of thermal creep in reactor materials, and radiation damage of semiconductors and superconductors.
Deep Centers In Semiconductors
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Author : Sokrates T. Pantelides
language : en
Publisher: CRC Press
Release Date : 1992-11-30
Deep Centers In Semiconductors written by Sokrates T. Pantelides and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992-11-30 with Science categories.
Examines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap. For each deep center chosen, a scientist instrumental in its development discusses the theoretical and experimental techniques used to understand that center. The second edition contains four new sections treating recent developments, including a chapter on hydrogen in crystalline semiconductors. Annotation copyright by Book News, Inc., Portland, OR
Neutron Transmutation Doping Of Semiconductor Materials
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Author : Robert D. Larrabee
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-11
Neutron Transmutation Doping Of Semiconductor Materials written by Robert D. Larrabee and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-11 with Science categories.
viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.
Defects And Radiation Effects In Semiconductors 1978
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Author : J. H. Albany
language : en
Publisher:
Release Date : 1979
Defects And Radiation Effects In Semiconductors 1978 written by J. H. Albany and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1979 with Semiconductors categories.
Optical Absorption Of Impurities And Defects In Semiconducting Crystals
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Author : Bernard Pajot
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-08-28
Optical Absorption Of Impurities And Defects In Semiconducting Crystals written by Bernard Pajot and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-08-28 with Science categories.
This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.
Intrinsic Point Defects Impurities And Their Diffusion In Silicon
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Author : Peter Pichler
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Intrinsic Point Defects Impurities And Their Diffusion In Silicon written by Peter Pichler and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis needed for a thorough understanding of the text. Therefore, the book is able to provide an introduction to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes.