Neutron Transmutation Doping Of Semiconductor Materials
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Neutron Transmutation Doping Of Semiconductor Materials
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Author : Robert D. Larrabee
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-11
Neutron Transmutation Doping Of Semiconductor Materials written by Robert D. Larrabee and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-11 with Technology & Engineering categories.
viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.
Neutron Transmutation Doping In Semiconductors
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Author : J. Meese
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Neutron Transmutation Doping In Semiconductors written by J. Meese and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.
Neutron Transmutation Doped Silicon
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Author : Jens Guldberg
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-11
Neutron Transmutation Doped Silicon written by Jens Guldberg and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-11 with Technology & Engineering categories.
This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.
Fabrication Of Semiconductor Devices By Neutron Transmutation Doping
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Author :
language : en
Publisher:
Release Date : 1962-12
Fabrication Of Semiconductor Devices By Neutron Transmutation Doping written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1962-12 with Semiconductor doping, Neutron transmutation categories.
Fabrication Of Silicon Microcircuits By Neutron Transmutation Doping
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Author : Carl N. Klahr
language : en
Publisher:
Release Date : 1966
Fabrication Of Silicon Microcircuits By Neutron Transmutation Doping written by Carl N. Klahr and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1966 with Semiconductor doping, Neutron transmutation categories.
Technical Impediments To A More Effective Utilization Of Neutron Transmutation Doped Silicon For High Power Device Fabrication
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Author : D. R. Meyers
language : en
Publisher:
Release Date : 1980
Technical Impediments To A More Effective Utilization Of Neutron Transmutation Doped Silicon For High Power Device Fabrication written by D. R. Meyers and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1980 with Neutron irradiation categories.
Neutron Transmutation Doped Silicon
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Author : Jens Guldberg
language : en
Publisher:
Release Date : 2014-01-15
Neutron Transmutation Doped Silicon written by Jens Guldberg and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-01-15 with categories.
Neutron Transmutation Doping Of Silicon For The Production Of Radiation Detectors
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Author : D. Alexiev
language : en
Publisher:
Release Date : 1987
Neutron Transmutation Doping Of Silicon For The Production Of Radiation Detectors written by D. Alexiev and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987 with Semiconductor doping, Neutron transmutation categories.
Neutron Transmutation Doping Of Gallium Arsenide
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Author : D. Alexiev
language : en
Publisher:
Release Date : 1987
Neutron Transmutation Doping Of Gallium Arsenide written by D. Alexiev and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987 with Gallium arsenide semiconductors categories.
Isotope Effects In Solid State Physics
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Author :
language : en
Publisher: Academic Press
Release Date : 2000-10-24
Isotope Effects In Solid State Physics written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-10-24 with Science categories.
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. First book on the extremely fashionable subject Adopts an original approach to the subject Timely book in a field making significant progress Introduces new optical tools for solid state physics with wide technological potential Important applications are to be expected for information storage, isotopic fiber-optics, and tunable solid state lasers, isotopic optoelectronics, as well as neutron transmutation doping Accessible to physics, chemists, electronic engineers, and materials scientists Contents based on recent theoretical developments