Optical Absorption Of Impurities And Defects In Semiconducting Crystals
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Optical Absorption Of Impurities And Defects In Semiconducting Crystals
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Author : Bernard Pajot
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-08-28
Optical Absorption Of Impurities And Defects In Semiconducting Crystals written by Bernard Pajot and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-08-28 with Science categories.
This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.
Optical Absorption Of Impurities And Defects In Semiconducting Crystals
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Author : Bernard Pajot
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-05-26
Optical Absorption Of Impurities And Defects In Semiconducting Crystals written by Bernard Pajot and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-05-26 with Science categories.
Semiconducting and Insulating Crystals details how absorption spectroscopy provides information on the nature, concentration, charge state and configuration of impurities in crystals and also on their kinetics and transformations under annealing. After an introduction of the bulk optical properties of semiconductors and insulators and of impurities in crystals, this book presents the physical bases necessary for the understanding of impurity spectra. The description of various set-ups and accessories used in absorption spectroscopy is followed by a presentation of experimental results on specific impurities and classes of impurities and their relation with those obtained by various computation and by other experimental techniques.
Characterization And Optimization Of Dopants Impurities And Defects In Bulk Optical And Semiconductor Materials
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Author : Muad Saleh
language : en
Publisher:
Release Date : 2019
Characterization And Optimization Of Dopants Impurities And Defects In Bulk Optical And Semiconductor Materials written by Muad Saleh and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019 with Semiconductors categories.
Defects are what make most optical and semiconductor materials interesting, versatile in their behavior, and useable in different applications. Defects at the level of one atom in 106 to 109 atoms of the host material can have a significant influence on the electrical and optical properties, and depending on the identity of the defect and the site it is occupying, they can either enhance, degrade, or have no effect on the properties. Thus, it is crucial to characterize and understand the role of various dopants/defects on the properties and performance optical and semiconductor materials, and the defect/dopant formation, incorporation, and variation. This dissertation examines the influence of dopants and defects in ZnS, [beta]-Ga2O3 and Nd:YAG. Finally, the implementation of the accelerated crucible rotation technique (ACRT) is described to modify the Nd concentration profile in YAG grown by Czochralski (CZ). ZnS is a well-known scintillator used mainly in the powder forms; this study examines using bulk ZnS as a scintillator by modeling. The study also evaluates bulk ZnS single crystals by photoluminescence (PL), PL excitation, optical absorption, radioluminescence, and thermoluminescence and shows that samples show diverse luminescence behavior that can be attributed to the differences between samples' impurity concentrations. Study of the bulk ZnS by optical deep level transient spectroscopy (ODLTS), photoinduced current transient spectroscopy (PICTS), and photoconductivity shows the applicability of ODLTS/PICTS in studying ZnS, and show peculiar optically induced electrical behavior that is caused by a combination of point and extended defects. [beta]-Ga2O3 is an ultra-wide bandgap transparent semiconducting oxide of interest for high breakdown voltage electronics. This study evaluates parameters that affect the Czochralski (CZ) growth of [beta]-Ga2O3, and introduces two new shallow donors, Zr and Hf; these dopants show potentially superior electrical properties over other donors, such as Si and Sn, in [beta]-Ga2O3 and the ability to degenerately dope [beta]-Ga2O3. Finally, Nd:YAG is an important laser material that suffers from dopant segregation. In this study, we use ACRT to modify the Nd radial and vertical concentration profile during the CZ growth of Nd:YAG and enable enhanced incorporation of Nd, better homogeneity, and lower stresses.
Dopants And Defects In Semiconductors
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Author : Matthew D. McCluskey
language : en
Publisher: CRC Press
Release Date : 2012-02-23
Dopants And Defects In Semiconductors written by Matthew D. McCluskey and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-02-23 with Science categories.
Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts. The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and doping. They then explain electrical, vibrational, optical, and thermal properties. Moving on to characterization approaches, the text concludes with chapters on the measurement of electrical properties, optical spectroscopy, particle-beam methods, and microscopy. By treating dopants and defects in semiconductors as a unified subject, this book helps define the field and prepares students for work in technologically important areas. It provides students with a solid foundation in both experimental methods and the theory of defects in semiconductors.
Identification Of Defects In Semiconductors
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Author :
language : en
Publisher: Academic Press
Release Date : 1998-07-02
Identification Of Defects In Semiconductors written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-07-02 with Technology & Engineering categories.
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Semiconducting Iii V Compounds
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Author : C. Hilsum
language : en
Publisher: Elsevier
Release Date : 2014-07-17
Semiconducting Iii V Compounds written by C. Hilsum and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-07-17 with Science categories.
Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide). Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, focusing on the properties of the zinc-blende structure as well as processes ranging from ionicity and infrared lattice absorption to electronegativity. The reader is then introduced to the band structure of III-V compounds and its theoretical aspects, along with cyclotron resonance and the diamagnetic Landau effect. Subsequent chapters discuss impurities and defects; optical and electrical properties; photoelectric effects; and preparation and applications of III-V compounds. This monograph will be of interest to physicists.
Optical Properties Of Semiconducting Crystals
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Author : Werner R. Rambauske
language : en
Publisher:
Release Date : 1964
Optical Properties Of Semiconducting Crystals written by Werner R. Rambauske and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1964 with Semiconductors categories.
An extended program about optical properties of some selected semiconducting crystals under varied conditions of temperature, pressure, magnetic and electric fields, means of excitation, and influence of impurities is briefly summarized. (Author).
Defects And Impurity Centers In Ionic Crystals
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Author :
language : en
Publisher:
Release Date : 1991
Defects And Impurity Centers In Ionic Crystals written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with categories.
Growth And Optical Properties Of Wide Gap Ii Vi Low Dimensional Semiconductors
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Author : T.C. McGill
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Growth And Optical Properties Of Wide Gap Ii Vi Low Dimensional Semiconductors written by T.C. McGill and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
This volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors", held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme. Semiconducting compounds formed by combining an element from column II of the periodic table with an element from column VI (so called II-VI Semiconductors) have long promised many optoelectronic devices operating in the visible region of the spectrum. However, these materials have encountered numerous problems including: large number of defects and difficulties in obtaining p- and n-type doping. Advances in new methods of material preparation may hold the key to unlocking the unfulfilled promises. During the workshop a full session was taken up covering the prospects for wide-gap II-VI Semiconductor devices, particularly light emitting ones. The growth of bulk materials was reviewed with the view of considering II-VI substrates for the novel epitaxial techniques such as MOCVD, MBE, ALE, MOMBE and ALE-MBE. The controlled introduction of impurities during non-equilibrium growth to provide control of the doping type and conductivity was emphasized.
Silicon Germanium And Their Alloys
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Author : Gudrun Kissinger
language : en
Publisher: CRC Press
Release Date : 2014-12-09
Silicon Germanium And Their Alloys written by Gudrun Kissinger and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-12-09 with Science categories.
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic