Polarization Effects In Semiconductors
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Polarization Effects In Semiconductors
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Author : Debdeep Jena
language : en
Publisher: Springer Science & Business Media
Release Date : 2008
Polarization Effects In Semiconductors written by Debdeep Jena and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Science categories.
Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.
Polarization Effects In Semiconductors
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Author : Colin Wood
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-10-16
Polarization Effects In Semiconductors written by Colin Wood and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-10-16 with Technology & Engineering categories.
This book presents the latest understanding of the solid physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of hexagonal semiconductors, and the piezo-electric effects in thin film hetero-structures which are used in wide forbidden band gap sensor, electronic and opto-electronic semiconductor devices.
Handbook Of Nitride Semiconductors And Devices Materials Properties Physics And Growth
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Author : Hadis Morkoç
language : en
Publisher: John Wiley & Sons
Release Date : 2009-07-30
Handbook Of Nitride Semiconductors And Devices Materials Properties Physics And Growth written by Hadis Morkoç and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-07-30 with Technology & Engineering categories.
The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.
Nitride Semiconductors And Devices
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Author : Hadis Morkoç
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-03-08
Nitride Semiconductors And Devices written by Hadis Morkoç and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-08 with Technology & Engineering categories.
A View of the Past, and a Look into the Future by a Pioneer By Jacques I. Pankove This forword will be a brief review of important developments in the early and recent history of gallium nitride, and also a perspective on the current and future evolution of this exciting field. Gallium nitride (GaN) was syn thesized more than 50 years ago by Johnson et al. [1] in 1932, and also by Juza and Hahn [2] in 1938, who passed ammonia over hot gallium. This method produced small needles and platelets. The purpose of Juza and Hahn was to investiagte the crystal structure and lattice constant of GaN as part of a systematic study of many compounds. Two decades later, Grim al. [3] in 1959 employed the same technique to produce small cry meiss et stals of GaN for the purpose of measuring their photoluminescence spectra. Another decade later Maruska and Tietjen [4] in 1969 used a chloride trans port vapor technique to make a large-area layer of GaN on sapphire. All of the GaN made at that time was very conducting n-type even when not deli berately doped. The donors were believed to be nitrogen vacancies. Later this model was questioned by Seifert et al. [5] in 1983, and oxygen was pro as the donor. Oxygen with its 6 valence electrons on a N site (N has 5 posed valence electrons) would be a single donor.
Nitride Semiconductors
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Author : Pierre Ruterana
language : en
Publisher: John Wiley & Sons
Release Date : 2006-05-12
Nitride Semiconductors written by Pierre Ruterana and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-05-12 with Science categories.
Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currently the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components. This collection of review articles provides a systematic and in-depth overview of the topic, on both a high and current level. It offers information on the physical basics as well as the latest results in a compact yet comprehensive manner. The contributions cover the physical processes involved in manufacture, from semiconductor growth, via their atomic structures and the related characteristics right up to future industrial applications. A highly pertinent book for anyone working in applied materials research or the semiconductor industry.
Electron And Nuclear Spin Dynamics In Semiconductor Nanostructures
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Author : M. M. Glazov
language : en
Publisher:
Release Date : 2018
Electron And Nuclear Spin Dynamics In Semiconductor Nanostructures written by M. M. Glazov and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018 with Science categories.
This book focuses on the main aspects of electron and nuclear spin dynamics in semiconductor nanostructures. It summarizes main results of theoretical and experimental studies of interactions in spin systems, effects of ultrafast spin manipulation by light, phenomena of spin losses, and the physics of the omnipresent spin noise.
Ultrafast Phenomena In Semiconductors
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Author : Kong-Thon Tsen
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Ultrafast Phenomena In Semiconductors written by Kong-Thon Tsen and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
There are many books in the market devoted to the review of certain fields. This book is different from those in that authors not only provide reviews of the fields but also present their own important contributions to the fields in a tutorial way. As a result, researchers who are already in the field of ultrafast dynamics in semicon ductors and its device applications as well as researchers and graduate students just entering the field will benefit from it. This book is made up of recent new developments in the field of ultrafast dynamics in semiconductors. It consists of nine chapters. Chapter 1 reviews a mi croscopic many-body theory which allows one to compute the linear and non-linear optical properties of semiconductor superlattices in the presence of homogeneous electric fields. Chapter 2 deals with ultrafast intersubband dynamics in quantum wells and device structures. Chapter 3 is devoted to Bloch oscillations in semicon ductors and their applications. Chapter 4 discusses transient electron transport phe nomena, such as electron ballistic transport and electron velocity overshoot phe nomena as well as non-equilibrium phonon dynamics in nanostructure semicon ductors. Chapter 5 reviews experimental and theoretical work on the use of the phase properties of one or more ultrashort optical pulses to generate and control electrical currents in semiconductors.
Iii V Nitride Semiconductors
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Author : Edward T. Yu
language : en
Publisher: CRC Press
Release Date : 2022-10-30
Iii V Nitride Semiconductors written by Edward T. Yu and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-10-30 with Technology & Engineering categories.
The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.
Quantum Coherence Correlation And Decoherence In Semiconductor Nanostructures
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Author : Toshihide Takagahara
language : en
Publisher:
Release Date : 2003
Quantum Coherence Correlation And Decoherence In Semiconductor Nanostructures written by Toshihide Takagahara and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with Science categories.
Semiconductor nanostructures are attracting a great deal of interest as the most promising device with which to implement quantum information processing and quantum computing. This book surveys the present status of nanofabrication techniques, near field spectroscopy and microscopy to assist the fabricated nanostructures. It will be essential reading for academic and industrial researchers in pure and applied physics, optics, semiconductors and microelectronics. Key Features: The first up-to-date review articles on various aspects on quantum coherence, correlation and decoherence in semiconductor nanostructures
Iii Nitride Semiconductors
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Author : Hongxing Jiang
language : en
Publisher: CRC Press
Release Date : 2024-11-01
Iii Nitride Semiconductors written by Hongxing Jiang and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-11-01 with Technology & Engineering categories.
This second part presents a comprehensive overview of fundamental optical properties of the III Nitride Semiconductor. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the second of a two part Volume in the seriesOptoelectronic Properties of Semiconductors and Superlattices.