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Polarization Effects In Semiconductors


Polarization Effects In Semiconductors
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Polarization Effects In Semiconductors


Polarization Effects In Semiconductors
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Author : Debdeep Jena
language : en
Publisher: Springer Science & Business Media
Release Date : 2008

Polarization Effects In Semiconductors written by Debdeep Jena and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Science categories.


Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.



Electron Tunneling In Semiconductor Structures


Electron Tunneling In Semiconductor Structures
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Author : Björn G. R. Rudberg
language : en
Publisher:
Release Date : 1991

Electron Tunneling In Semiconductor Structures written by Björn G. R. Rudberg and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with Electrons categories.




Polarization Effects In Semiconductors


Polarization Effects In Semiconductors
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Author : Colin Wood
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-10-16

Polarization Effects In Semiconductors written by Colin Wood and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-10-16 with Technology & Engineering categories.


This book presents the latest understanding of the solid physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of hexagonal semiconductors, and the piezo-electric effects in thin film hetero-structures which are used in wide forbidden band gap sensor, electronic and opto-electronic semiconductor devices.



Spontaneous Polarization Effects In Nanoscale Systems Based On Narrow Gap Semiconductors


Spontaneous Polarization Effects In Nanoscale Systems Based On Narrow Gap Semiconductors
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Author : Leonid Isaev
language : en
Publisher:
Release Date : 2005

Spontaneous Polarization Effects In Nanoscale Systems Based On Narrow Gap Semiconductors written by Leonid Isaev and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Narrow gap semiconductors categories.




Theory Of An Electric Current Flow Induced Polarization Effect On The Optical Absorption Of A Semiconductor


Theory Of An Electric Current Flow Induced Polarization Effect On The Optical Absorption Of A Semiconductor
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Author : Carl Anthony Baumgardner
language : en
Publisher:
Release Date : 1967

Theory Of An Electric Current Flow Induced Polarization Effect On The Optical Absorption Of A Semiconductor written by Carl Anthony Baumgardner and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1967 with Polarization (Light) categories.




Current Induced Polarization Effect On The Permittivity And Reflectivity Of A Semiconductor


Current Induced Polarization Effect On The Permittivity And Reflectivity Of A Semiconductor
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Author : Clody Vernon Hodge
language : en
Publisher:
Release Date : 1969

Current Induced Polarization Effect On The Permittivity And Reflectivity Of A Semiconductor written by Clody Vernon Hodge and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1969 with Polarization (Electricity) categories.




Polarization Effects In Group Iii Nitride Materials And Devices


Polarization Effects In Group Iii Nitride Materials And Devices
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Author : Qiyuan Wei
language : en
Publisher:
Release Date : 2012

Polarization Effects In Group Iii Nitride Materials And Devices written by Qiyuan Wei and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with Nitrides categories.


Group III-nitride semiconductors have wide application in optoelectronic devices. Spontaneous and piezoelectric polarization effects have been found to be critical for electric and optical properties of group III-nitrides. In this dissertation, firstly, the crystal orientation dependence of the polarization is calculated and in-plane polarization is revealed. The in-plane polarization is sensitive to the lateral characteristic dimension determined by the microstructure. Specific semi-polar plane growth is suggested for reducing quantum-confined Stark effect. The macroscopic electrostatic field from the polarization discontinuity in the heterostructures is discussed, b ased on that, the band diagram of InGaN/GaN quantum well/barrier and AlGaN/GaN heterojunction is obtained from the self-consistent solution of Schrodinger and Poisson equations. New device design such as triangular quantum well with the quenched polarization field is proposed. Electron holography in the transmission electron microscopy is used to examine the electrostatic potential under polarization effects. The measured potential energy profiles of heterostructure are compared with the band simulation, and evidences of two-dimensional hole gas (2DHG) in a wurtzite AlGaN/ AlN/ GaN superlattice, as well as quasi two-dimensional electron gas (2DEG) in a zinc-blende AlGaN/GaN are found. The large polarization discontinuity of AlN/GaN is the main source of the 2DHG of wurtzite nitrides, while the impurity introduced during the growth of AlGaN layer provides the donor states that to a great extent balance the free electrons in zinc-blende nitrides. It is also found that the quasi-2DEG concentration in zinc-blende AlGaN/GaN is about one order of magnitude lower than the wurtzite AlGaN/GaN, due to the absence of polarization. Finally, the InAlN/GaN lattice-matched epitaxy, which ideally has a zero piezoelectric polarization and strong spontaneous polarization, is experimentally studied. The breakdown in compositional homogeneity is triggered by threading dislocations with a screw component propagating from the GaN underlayer, which tend to open up into V-grooves at a certain thickness of the InxAl1-xN layer. The V-grooves coalesce at 200 nm and are filled with material that exhibits a significant drop in indium content and a broad luminescence peak. The structural breakdown is due to heterogeneous nucleation and growth at the facets of the V-grooves.



Quantum Theory Of The Optical And Electronic Properties Of Semiconductors


Quantum Theory Of The Optical And Electronic Properties Of Semiconductors
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Author : Hartmut Haug
language : en
Publisher: World Scientific Publishing Company
Release Date : 2009-01-22

Quantum Theory Of The Optical And Electronic Properties Of Semiconductors written by Hartmut Haug and has been published by World Scientific Publishing Company this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-01-22 with Technology & Engineering categories.


This invaluable textbook presents the basic elements needed to understand and research into semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. Fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, the optical Stark effect, the semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz–Keldysh effects, are covered. The material is presented in sufficient detail for graduate students and researchers with a general background in quantum mechanics. This fifth edition includes an additional chapter on 'Quantum Optical Effects' where the theory of quantum optical effects in semiconductors is detailed. Besides deriving the 'semiconductor luminescence equations' and the expression for the stationary luminescence spectrum, results are presented to show the importance of Coulombic effects on the semiconductor luminescence and to elucidate the role of excitonic populations.



Optical Processes In Semiconductors


Optical Processes In Semiconductors
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Author : Jacques I. Pankove
language : en
Publisher: Courier Corporation
Release Date : 2012-12-19

Optical Processes In Semiconductors written by Jacques I. Pankove and has been published by Courier Corporation this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-19 with Science categories.


Comprehensive text and reference covers all phenomena involving light in semiconductors, emphasizing modern applications in semiconductor lasers, electroluminescence, photodetectors, photoconductors, photoemitters, polarization effects, absorption spectroscopy, more. Numerous problems. 339 illustrations.



Strain Effect In Semiconductors


Strain Effect In Semiconductors
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Author : Yongke Sun
language : en
Publisher: Springer Science & Business Media
Release Date : 2009-11-14

Strain Effect In Semiconductors written by Yongke Sun and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-11-14 with Technology & Engineering categories.


Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.