Tunneling Field Effect Transistors
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Tunneling Field Effect Transistor Technology
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Author : Lining Zhang
language : en
Publisher: Springer
Release Date : 2016-04-09
Tunneling Field Effect Transistor Technology written by Lining Zhang and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-04-09 with Technology & Engineering categories.
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.
Tunneling Field Effect Transistors
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Author : T. S. Arun Samuel
language : en
Publisher: CRC Press
Release Date : 2023-06-08
Tunneling Field Effect Transistors written by T. S. Arun Samuel and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-06-08 with Technology & Engineering categories.
This book will give insight into emerging semiconductor devices from their applications in electronic circuits, which form the backbone of electronic equipment. It provides desired exposure to the ever-growing field of low-power electronic devices and their applications in nanoscale devices, memory design, and biosensing applications. Tunneling Field Effect Transistors: Design, Modeling and Applications brings researchers and engineers from various disciplines of the VLSI domain to together tackle the emerging challenges in the field of nanoelectronics and applications of advanced low-power devices. The book begins by discussing the challenges of conventional CMOS technology from the perspective of low-power applications, and it also reviews the basic science and developments of subthreshold swing technology and recent advancements in the field. The authors discuss the impact of semiconductor materials and architecture designs on TFET devices and the performance and usage of FET devices in various domains such as nanoelectronics, Memory Devices, and biosensing applications. They also cover a variety of FET devices, such as MOSFETs and TFETs, with various structures based on the tunneling transport phenomenon. The contents of the book have been designed and arranged in such a way that Electrical Engineering students, researchers in the field of nanodevices and device-circuit codesign, as well as industry professionals working in the domain of semiconductor devices, will find the material useful and easy to follow.
Fundamentals Of Tunnel Field Effect Transistors
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Author : Sneh Saurabh
language : en
Publisher: CRC Press
Release Date : 2016-10-26
Fundamentals Of Tunnel Field Effect Transistors written by Sneh Saurabh and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-10-26 with Science categories.
During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
Fundamentals Of Tunnel Field Effect Transistors
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Author : Sneh Saurabh
language : en
Publisher: CRC Press
Release Date : 2016-10-26
Fundamentals Of Tunnel Field Effect Transistors written by Sneh Saurabh and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-10-26 with Science categories.
During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
Tunnel Field Effect Transistors Tfet
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Author : Jagadesh Kumar Mamidala
language : en
Publisher: John Wiley & Sons
Release Date : 2016-09-27
Tunnel Field Effect Transistors Tfet written by Jagadesh Kumar Mamidala and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-09-27 with Technology & Engineering categories.
Research into Tunneling Field Effect Transistors (TFETs) has developed significantly in recent times, indicating their significance in low power integrated circuits. This book describes the qualitative and quantitative fundamental concepts of TFET functioning, the essential components of the problem of modelling the TFET, and outlines the most commonly used mathematical approaches for the same in a lucid language. Divided into eight chapters, the topics covered include: Quantum Mechanics, Basics of Tunneling, The Tunnel FET, Drain current modelling of Tunnel FET: The task and its challenges, Modeling the Surface Potential in TFETs, Modelling the Drain Current, and Device simulation using Technology Computer Aided Design (TCAD). The information is well organized, describing different phenomena in the TFETs using simple and logical explanations. Key features: * Enables readers to understand the basic concepts of TFET functioning and modelling in order to read, understand, and critically analyse current research on the topic with ease. * Includes state-of-the-art work on TFETs, attempting to cover all the recent research articles published on the subject. * Discusses the basic physics behind tunneling, as well as the device physics of the TFETs. * Provides detailed discussion on device simulations along with device physics so as to enable researchers to carry forward their study on TFETs. Primarily targeted at new and practicing researchers and post graduate students, the book would particularly be useful for researchers who are working in the area of compact and analytical modelling of semiconductor devices.
Tunneling Field Effect Transistors
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Author : T. S. Arun Samuel
language : en
Publisher: CRC Press
Release Date : 2023-06-08
Tunneling Field Effect Transistors written by T. S. Arun Samuel and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-06-08 with Technology & Engineering categories.
This book will give insight into emerging semiconductor devices from their applications in electronic circuits, which form the backbone of electronic equipment. It provides desired exposure to the ever-growing field of low-power electronic devices and their applications in nanoscale devices, memory design, and biosensing applications. Tunneling Field Effect Transistors: Design, Modeling and Applications brings researchers and engineers from various disciplines of the VLSI domain to together tackle the emerging challenges in the field of nanoelectronics and applications of advanced low-power devices. The book begins by discussing the challenges of conventional CMOS technology from the perspective of low-power applications, and it also reviews the basic science and developments of subthreshold swing technology and recent advancements in the field. The authors discuss the impact of semiconductor materials and architecture designs on TFET devices and the performance and usage of FET devices in various domains such as nanoelectronics, Memory Devices, and biosensing applications. They also cover a variety of FET devices, such as MOSFETs and TFETs, with various structures based on the tunneling transport phenomenon. The contents of the book have been designed and arranged in such a way that Electrical Engineering students, researchers in the field of nanodevices and device-circuit codesign, as well as industry professionals working in the domain of semiconductor devices, will find the material useful and easy to follow.
Field Effect Transistors
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Author : P. Suveetha Dhanaselvam
language : en
Publisher: John Wiley & Sons
Release Date : 2025-04-15
Field Effect Transistors written by P. Suveetha Dhanaselvam and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2025-04-15 with Technology & Engineering categories.
Field Effect Transistors is an essential read for anyone interested in the future of electronics, as it provides a comprehensive yet accessible exploration of innovative semiconductor devices and their applications, making it a perfect resource for both beginners and seasoned professionals in the field. Miniaturization has become the slogan of the electronics industry. Field Effect Transistors serves as a short encyclopedia for young minds looking for solutions in the miniaturization of semiconductor devices. It explores the characteristics, novel materials used, modifications in device structure, and advancements in model FET devices. Though many devices following Moore’s Law have been proposed and designed, a complete history of the existing and proposed semiconductor devices is not available. This book focuses on developments and research in emerging semiconductor FET devices and their applications, providing unique coverage of topics covering recent advancements and novel concepts in the field of miniaturized semiconductor devices. Field Effect Transistors is an easy-to-understand guide, making it excellent for those who are new to the subject, giving insight and analysis of recent developments and developed semiconductor device structures along with their applications.
Circuit Applications Of The Tunneling Field Effect Transistor Tfet
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Author : Thomas Nirschl
language : en
Publisher:
Release Date : 2007
Circuit Applications Of The Tunneling Field Effect Transistor Tfet written by Thomas Nirschl and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with categories.
Journal Of Nano Research Vol 41
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Author : Efstathios I. Meletis
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 2016-05-04
Journal Of Nano Research Vol 41 written by Efstathios I. Meletis and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-05-04 with Technology & Engineering categories.
Special topic volume with invited peer reviewed papers only
Development Of A Deep Submicron Fabrication Process For Tunneling Field Effect Transistors
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Author : Michael J. Barth
language : en
Publisher:
Release Date : 2011
Development Of A Deep Submicron Fabrication Process For Tunneling Field Effect Transistors written by Michael J. Barth and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Field-effect transistors categories.
"The requirements placed upon next-generation devices include high on-state current, low power supply voltages, and low subthreshold swing. Tunneling Field Effect Transistors (TFETs) have been of recent interest because they have the potential to fulfill these requirements. The TFET is a gated tunnel junction. The TFET operates by modulating the probability of band-to-band tunneling between the source and the channel of the device. When the tunnel transistor is off, there is a potential barrier between the source and the channel. The width of this potential barrier is large enough to prevent electrons tunneling from the valence to conduction bands, the result of which is a lower leakage current and improved power efficiency. The potential barrier narrows as bias is applied to the gate. When the applied gate voltage exceeds the threshold voltage this potential barrier becomes thin enough to allow for tunneling from the valence band to the conduction band. The tunneling mechanism allows the device to have a high on-state current and low subthreshold swing at low power supplies. To date the majority of the work involving TFETs has been simulation-based. Unfortunately the models used in these simulations are deficient. The models require physical data for proper calibration [1]. The few experimental demonstrations of TFETs have not yielded a body of empirical data sufficient for calibration. This work intends to help provide that body of experimental data on gated and non-gated tunneling junctions in InGaAs. This work focuses on the development of a process to gate p-i-n junctions and extract the contribution of the gate on junction performance."--Abstract.