Fundamentals Of Tunnel Field Effect Transistors

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Fundamentals Of Tunnel Field Effect Transistors
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Author : Sneh Saurabh
language : en
Publisher: CRC Press
Release Date : 2016-10-26
Fundamentals Of Tunnel Field Effect Transistors written by Sneh Saurabh and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-10-26 with Science categories.
During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
Tunnel Field Effect Transistors Tfet
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Author : Jagadesh Kumar Mamidala
language : en
Publisher: John Wiley & Sons
Release Date : 2016-09-27
Tunnel Field Effect Transistors Tfet written by Jagadesh Kumar Mamidala and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-09-27 with Technology & Engineering categories.
Research into Tunneling Field Effect Transistors (TFETs) has developed significantly in recent times, indicating their significance in low power integrated circuits. This book describes the qualitative and quantitative fundamental concepts of TFET functioning, the essential components of the problem of modelling the TFET, and outlines the most commonly used mathematical approaches for the same in a lucid language. Divided into eight chapters, the topics covered include: Quantum Mechanics, Basics of Tunneling, The Tunnel FET, Drain current modelling of Tunnel FET: The task and its challenges, Modeling the Surface Potential in TFETs, Modelling the Drain Current, and Device simulation using Technology Computer Aided Design (TCAD). The information is well organized, describing different phenomena in the TFETs using simple and logical explanations. Key features: * Enables readers to understand the basic concepts of TFET functioning and modelling in order to read, understand, and critically analyse current research on the topic with ease. * Includes state-of-the-art work on TFETs, attempting to cover all the recent research articles published on the subject. * Discusses the basic physics behind tunneling, as well as the device physics of the TFETs. * Provides detailed discussion on device simulations along with device physics so as to enable researchers to carry forward their study on TFETs. Primarily targeted at new and practicing researchers and post graduate students, the book would particularly be useful for researchers who are working in the area of compact and analytical modelling of semiconductor devices.
Micro And Nanoelectronics Devices Circuits And Systems
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Author : Trupti Ranjan Lenka
language : en
Publisher: Springer Nature
Release Date : 2023-09-02
Micro And Nanoelectronics Devices Circuits And Systems written by Trupti Ranjan Lenka and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-09-02 with Technology & Engineering categories.
This book presents select proceedings of the International Conference on Micro and Nanoelectronics Devices, Circuits and Systems (MNDCS-2023). The book includes cutting-edge research papers in the emerging fields of micro and nanoelectronics devices, circuits, and systems from experts working in these fields over the last decade. The book is a unique collection of chapters from different areas with a common theme and is immensely useful to academic researchers and practitioners in the industry who work in this field.
Tunneling Field Effect Transistors
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Author : T. S. Arun Samuel
language : en
Publisher: CRC Press
Release Date : 2023-06-08
Tunneling Field Effect Transistors written by T. S. Arun Samuel and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-06-08 with Technology & Engineering categories.
This book will give insight into emerging semiconductor devices from their applications in electronic circuits, which form the backbone of electronic equipment. It provides desired exposure to the ever-growing field of low-power electronic devices and their applications in nanoscale devices, memory design, and biosensing applications. Tunneling Field Effect Transistors: Design, Modeling and Applications brings researchers and engineers from various disciplines of the VLSI domain to together tackle the emerging challenges in the field of nanoelectronics and applications of advanced low-power devices. The book begins by discussing the challenges of conventional CMOS technology from the perspective of low-power applications, and it also reviews the basic science and developments of subthreshold swing technology and recent advancements in the field. The authors discuss the impact of semiconductor materials and architecture designs on TFET devices and the performance and usage of FET devices in various domains such as nanoelectronics, Memory Devices, and biosensing applications. They also cover a variety of FET devices, such as MOSFETs and TFETs, with various structures based on the tunneling transport phenomenon. The contents of the book have been designed and arranged in such a way that Electrical Engineering students, researchers in the field of nanodevices and device-circuit codesign, as well as industry professionals working in the domain of semiconductor devices, will find the material useful and easy to follow.
Field Effect Transistors
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Author : P. Suveetha Dhanaselvam
language : en
Publisher: John Wiley & Sons
Release Date : 2025-04-15
Field Effect Transistors written by P. Suveetha Dhanaselvam and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2025-04-15 with Technology & Engineering categories.
Field Effect Transistors is an essential read for anyone interested in the future of electronics, as it provides a comprehensive yet accessible exploration of innovative semiconductor devices and their applications, making it a perfect resource for both beginners and seasoned professionals in the field. Miniaturization has become the slogan of the electronics industry. Field Effect Transistors serves as a short encyclopedia for young minds looking for solutions in the miniaturization of semiconductor devices. It explores the characteristics, novel materials used, modifications in device structure, and advancements in model FET devices. Though many devices following Moore’s Law have been proposed and designed, a complete history of the existing and proposed semiconductor devices is not available. This book focuses on developments and research in emerging semiconductor FET devices and their applications, providing unique coverage of topics covering recent advancements and novel concepts in the field of miniaturized semiconductor devices. Field Effect Transistors is an easy-to-understand guide, making it excellent for those who are new to the subject, giving insight and analysis of recent developments and developed semiconductor device structures along with their applications.
Junctionless Field Effect Transistors
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Author : Shubham Sahay
language : en
Publisher: John Wiley & Sons
Release Date : 2019-01-28
Junctionless Field Effect Transistors written by Shubham Sahay and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-01-28 with Technology & Engineering categories.
A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Integrated Devices For Artificial Intelligence And Vlsi
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Author : Balwinder Raj
language : en
Publisher: John Wiley & Sons
Release Date : 2024-08-01
Integrated Devices For Artificial Intelligence And Vlsi written by Balwinder Raj and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-08-01 with Technology & Engineering categories.
With its in-depth exploration of the close connection between microelectronics, AI, and VLSI technology, this book offers valuable insights into the cutting-edge techniques and tools used in VLSI design automation, making it an essential resource for anyone seeking to stay ahead in the rapidly evolving field of VLSI design. Very large-scale integration (VLSI) is the inter-disciplinary science of utilizing advanced semiconductor technology to create various functions of computer system. This book addresses the close link of microelectronics and artificial intelligence (AI). By combining VLSI technology, a very powerful computer architecture confinement is possible. To overcome problems at different design stages, researchers introduced artificial intelligent (AI) techniques in VLSI design automation. AI techniques, such as knowledge-based and expert systems, first try to define the problem and then choose the best solution from the domain of possible solutions. These days, several CAD technologies, such as Synopsys and Mentor Graphics, are specifically created to increase the automation of VLSI design. When a task is completed using the appropriate tool, each stage of the task design produces outcomes that are more productive than typical. However, combining all of these tools into a single package offer has drawbacks. We can’t really use every outlook without sacrificing the efficiency and usefulness of our output. The researchers decided to include AI approaches into VLSI design automation in order to get around these obstacles. AI is one of the fastest growing tools in the world of technology and innovation that helps to make computers more reliable and easy to use. Artificial Intelligence in VLSI design has provided high-end and more feasible solutions to the difficulties faced by the VLSI industry. Physical design, RTL design, STA, etc. are some of the most in-demand courses to enter the VLSI industry. These courses help develop a better understanding of the many tools like Synopsis. With each new dawn, artificial intelligence in VLSI design is continually evolving, and new opportunities are being investigated.
Beyond Si Based Cmos Devices
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Author : Sangeeta Singh
language : en
Publisher: Springer Nature
Release Date : 2024-09-02
Beyond Si Based Cmos Devices written by Sangeeta Singh and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-09-02 with Technology & Engineering categories.
This book focuses on summarizing recent research trends for new beyond-CMOS and beyond-silicon devices, circuits, and architectures for computing. It reports the recent achievements in this field from leading research trends around the globe, specifically focusing on nanoscale beyond silicon materials and devices, functional nanomaterials, nanoscale devices, beyond-CMOS devices materials, and their opportunities and challenges. The book is devoted to the fast-evolving field of modern material science and nanoelectronics, particularly to the physics and technology of functional nanomaterials and devices.
Fundamentals Of Iii V Semiconductor Mosfets
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Author : Serge Oktyabrsky
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-03-16
Fundamentals Of Iii V Semiconductor Mosfets written by Serge Oktyabrsky and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-03-16 with Technology & Engineering categories.
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Device Circuit Co Design Issues In Fets
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Author : Shubham Tayal
language : en
Publisher: CRC Press
Release Date : 2023-08-22
Device Circuit Co Design Issues In Fets written by Shubham Tayal and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-08-22 with Technology & Engineering categories.
This book provides an overview of emerging semiconductor devices and their applications in electronic circuits, which form the foundation of electronic devices. Device Circuit Co-Design Issues in FETs provides readers with a better understanding of the ever-growing field of low-power electronic devices and their applications in the wireless, biosensing, and circuit domains. The book brings researchers and engineers from various disciplines of the VLSI domain together to tackle the emerging challenges in the field of engineering and applications of advanced low-power devices in an effort to improve the performance of these technologies. The chapters examine the challenges and scope of FinFET device circuits, 3D FETs, and advanced FET for circuit applications. The book also discusses low-power memory design, neuromorphic computing, and issues related to thermal reliability. The authors provide a good understanding of device physics and circuits, and discuss transistors based on the new channel/dielectric materials and device architectures to achieve low-power dissipation and ultra-high switching speeds to fulfill the requirements of the semiconductor industry. This book is intended for students, researchers, and professionals in the field of semiconductor devices and nanodevices, as well as those working on device-circuit co-design issues.