Junctionless Field Effect Transistors
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Junctionless Field Effect Transistors
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Author : Shubham Sahay
language : en
Publisher: John Wiley & Sons
Release Date : 2019-01-28
Junctionless Field Effect Transistors written by Shubham Sahay and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-01-28 with Technology & Engineering categories.
A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Junctionless Field Effect Transistors
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Author : Shubham Sahay
language : en
Publisher:
Release Date : 2019
Junctionless Field Effect Transistors written by Shubham Sahay and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019 with TECHNOLOGY & ENGINEERING categories.
Modeling Nanowire And Double Gate Junctionless Field Effect Transistors
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Author : Farzan Jazaeri
language : en
Publisher: Cambridge University Press
Release Date : 2018-03
Modeling Nanowire And Double Gate Junctionless Field Effect Transistors written by Farzan Jazaeri and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-03 with Science categories.
A detailed introduction to the design, modeling, and operation of junctionless field effect transistors (FETs), including advantages and limitations.
Study Of Novel Junctionless Field Effect Transistors
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Author : 蘇俊吉
language : en
Publisher:
Release Date : 2014
Study Of Novel Junctionless Field Effect Transistors written by 蘇俊吉 and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.
Hybrid P Channel Poly Si Junctionless Field Effect Transistors With Trench And Gate All Around Structure
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Author : Che Hsiang Cheng
language : en
Publisher:
Release Date : 2016
Hybrid P Channel Poly Si Junctionless Field Effect Transistors With Trench And Gate All Around Structure written by Che Hsiang Cheng and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016 with categories.
Nanoscale Effects In Junctionless Field Effect Transistors
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Author : Abdussamad Ahmed Muntahi
language : en
Publisher:
Release Date : 2018
Nanoscale Effects In Junctionless Field Effect Transistors written by Abdussamad Ahmed Muntahi and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018 with Metal semiconductor field-effect transistors categories.
Though the concept of junctionless field effect transistor (JLFET) is old, it was not possible to fabricate a useful JLFET device, as it requires a very shallow channel region. Very recently, the emergence of new and advanced technologies has made it possible to create viable JLFET devices using nanowires. This work aims to computationally investigate the interplay of quantum size-quantization and random dopant fluctuations (RDF) effects in nanoscale JLFETs. For this purpose, a 3-D fully atomistic quantum-corrected Monte Carlo device simulator has been integrated and used in this work. The size-quantization effect has been accounted for via a parameter-free effective potential scheme and benchmarked against the NEGF approach in the ballistic limit. To study the RDF effects and treat full Coulomb (electron-ion and electron-electron) interactions in the real-space and beyond the Poisson picture, the simulator implements a corrected-Coulomb electron dynamics (QC-ED) approach. The essential bandstructure and scattering parameters (energy bandgap, effective masses, and the density-of-states) have been computed using an atomistic 20-band nearest-neighbour sp 3d5s* tight-binding scheme. First, an experimental device was simulated to evaluate the validity of the simulator. Because of the small dimension, quantum mechanical confinement was found to be the dominant mechanism that significantly degrades the current drive capability of nanoscale JLFETs. Surface roughness scattering is not as prominent as observed in conventional MOSFETs. Also, because of its small size, the performance of the device is prone to the effect of variability, for which a discrete doping model was proved essential. Finally, a new JLFET was designed and optimized in this work. The proposed device is based on a gate-all-around silicon nanowire. Source/drain length is 32.5 nm and channel length is 14 nm. Gate contact length is 9 nm. The EOT (equivalent oxide thickness) is 1 nm. It has a metal gate with a workfunction of 4.55 eV. The source, channel and drain regions are n-type with a doping density of 1.5×1019 cm-3. Detailed simulation shows that the two most influential mechanisms that degrade the drive capability are quantum mechanical confinement and Coulomb scattering. Surface roughness scattering is found to be very weak. In addition, thinner nanowire is more prone to Coulomb scattering exhibiting a reduced ON-current (ION). Simulation results show that silicon nanowires with a side length (width and depth) of 3 nm and a doping density of 1.5×1019 cm-3 produce satisfactory drive current.
Different Types Of Field Effect Transistors
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Author : Momčilo Pejović
language : en
Publisher: BoD – Books on Demand
Release Date : 2017-06-07
Different Types Of Field Effect Transistors written by Momčilo Pejović and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-06-07 with Technology & Engineering categories.
In 1959, Atalla and Kahng at Bell Labs produced the first successful field-effect transistor (FET), which had been long anticipated by other researchers by overcoming the "surface states" that blocked electric fields from penetrating into the semiconductor material. Very quickly, they became the fundamental basis of digital electronic circuits. Up to this point, there are more than 20 different types of field-effect transistors that are incorporated in various applications found in everyday's life. Based on this fact, this book was designed to overview some of the concepts regarding FETs that are currently used as well as some concepts that are still being developed.
Study Of Novel Nano Scale Multi Gate Junctionless Field Effect Transistors
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Author :
language : en
Publisher:
Release Date : 2014
Study Of Novel Nano Scale Multi Gate Junctionless Field Effect Transistors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.
Field Effect Transistor Applications
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Author : William Gosling
language : en
Publisher:
Release Date : 1964
Field Effect Transistor Applications written by William Gosling and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1964 with Field-effect transistors categories.
A Study On Junctionless Nanowire Field Effect Transistors
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Author : Tien-Sheng Chao
language : en
Publisher:
Release Date : 2014
A Study On Junctionless Nanowire Field Effect Transistors written by Tien-Sheng Chao and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.