Fundamentals Of Nanoscaled Field Effect Transistors
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Fundamentals Of Nanoscaled Field Effect Transistors
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Author : Amit Chaudhry
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-23
Fundamentals Of Nanoscaled Field Effect Transistors written by Amit Chaudhry and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-23 with Technology & Engineering categories.
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Fundamentals Of Tunnel Field Effect Transistors
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Author : Sneh Saurabh
language : en
Publisher: CRC Press
Release Date : 2016-10-26
Fundamentals Of Tunnel Field Effect Transistors written by Sneh Saurabh and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-10-26 with Science categories.
During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
Nanoscale Field Effect Transistors Emerging Applications
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Author : Ekta Goel, Archana Pandey
language : en
Publisher: Bentham Science Publishers
Release Date : 2023-12-20
Nanoscale Field Effect Transistors Emerging Applications written by Ekta Goel, Archana Pandey and has been published by Bentham Science Publishers this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-12-20 with Technology & Engineering categories.
Nanoscale Field Effect Transistors: Emerging Applications is a comprehensive guide to understanding, simulating, and applying nanotechnology for design and development of specialized transistors. This book provides in-depth information on the modeling, simulation, characterization, and fabrication of semiconductor FET transistors. The book contents are structured into chapters that explain concepts with simple language and scientific references. The core of the book revolves around the fundamental physics that underlie the design of solid-state nanostructures and the optimization of these nanoscale devices for real-time applications. Readers will learn how to achieve superior performance in terms of reduced size and weight, enhanced subthreshold characteristics, improved switching efficiency, and minimal power consumption. Key Features: Quick summaries: Each chapter provides an introduction and summary to explain concepts in a concise manner. In-Depth Analysis: This book provides an extensive exploration of the theory and practice of nanoscale materials and devices, offering a detailed understanding of the technical aspects of Nano electronic FET transistors. Multidisciplinary Approach: It discusses various aspects of nanoscale materials and devices for applications such as quantum computation, biomedical applications, energy generation and storage, environmental protection, and more. It showcases how nanoscale FET devices are reshaping multiple industries. References: Chapters include references that encourage advanced readers to further explore key topics. Designed for a diverse audience, this book caters to students, academics and advanced readers interested in learning about Nano FET devices. Readership Students, academics and advanced readers
Fundamentals Of Nanoscale Film Analysis
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Author : Terry L. Alford
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-02-16
Fundamentals Of Nanoscale Film Analysis written by Terry L. Alford and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-02-16 with Technology & Engineering categories.
From materials science to integrated circuit development, much of modern technology is moving from the microscale toward the nanoscale. This book focuses on the fundamental physics underlying innovative techniques for analyzing surfaces and near-surfaces. New analytical techniques have emerged to meet these technological requirements, all based on a few processes that govern the interactions of particles and radiation with matter. This book addresses the fundamentals and application of these processes, from thin films to field effect transistors.
Nanoscale Transistors
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Author : Mark Lundstrom
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-06-18
Nanoscale Transistors written by Mark Lundstrom and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-06-18 with Technology & Engineering categories.
Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was developed in the 1960's, channel lengths were about 10 micrometers, but researchers are now building transistors with channel lengths of less than 10 nanometers. New kinds of transistors and other devices are also being explored. Nanoscale MOSFET engineering continues, however, to be dominated by concepts and approaches originally developed to treat microscale devices. To push MOSFETs to their limits and to explore devices that may complement or even supplant them, a clear understanding of device physics at the nano/molecular scale will be essential. Our objective is to provide engineers and scientists with that understandin- not only of nano-devices, but also of the considerations that ultimately determine system performance. It is likely that nanoelectronics will involve much more than making smaller and different transistors, but nanoscale transistors provides a specific, clear context in which to address some broad issues and is, therefore, our focus in this monograph.
Field Effect Transistors
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Author : P. Suveetha Dhanaselvam
language : en
Publisher: John Wiley & Sons
Release Date : 2025-03-11
Field Effect Transistors written by P. Suveetha Dhanaselvam and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2025-03-11 with Technology & Engineering categories.
Field Effect Transistors is an essential read for anyone interested in the future of electronics, as it provides a comprehensive yet accessible exploration of innovative semiconductor devices and their applications, making it a perfect resource for both beginners and seasoned professionals in the field. Miniaturization has become the slogan of the electronics industry. Field Effect Transistors serves as a short encyclopedia for young minds looking for solutions in the miniaturization of semiconductor devices. It explores the characteristics, novel materials used, modifications in device structure, and advancements in model FET devices. Though many devices following Moore’s Law have been proposed and designed, a complete history of the existing and proposed semiconductor devices is not available. This book focuses on developments and research in emerging semiconductor FET devices and their applications, providing unique coverage of topics covering recent advancements and novel concepts in the field of miniaturized semiconductor devices. Field Effect Transistors is an easy-to-understand guide, making it excellent for those who are new to the subject, giving insight and analysis of recent developments and developed semiconductor device structures along with their applications.
Fundamentals Of Iii V Semiconductor Mosfets
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Author : Serge Oktyabrsky
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-03-16
Fundamentals Of Iii V Semiconductor Mosfets written by Serge Oktyabrsky and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-03-16 with Technology & Engineering categories.
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Fundamentals Of Nanotransistors
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Author : Mark S. Lundstrom
language : en
Publisher:
Release Date : 2017
Fundamentals Of Nanotransistors written by Mark S. Lundstrom and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with Electronic books categories.
Field Effect Transistors A Comprehensive Overview
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Author : Pouya Valizadeh
language : en
Publisher: John Wiley & Sons
Release Date : 2016-02-23
Field Effect Transistors A Comprehensive Overview written by Pouya Valizadeh and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-02-23 with Technology & Engineering categories.
This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field. It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book contains six chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variations and novel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards of heteroepitaxy. Finally, Chapter 6 examines FETs at molecular scales. Links the discussion of contemporary transistor devices to physical processes Material has been class-tested in undergraduate and graduate courses on the design of integrated circuit components taught by the author Contains examples and end-of-chapter problems Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies is a reference for senior undergraduate / graduate students and professional engineers needing insight into physics of operation of modern FETs. Pouya Valizadeh is Associate Professor in the Department of Electrical and Computer Engineering at Concordia University in Quebec, Canada. He received B.S. and M.S. degrees with honors from the University of Tehran and Ph.D. degree from The University of Michigan (Ann Arbor) all in Electrical Engineering in 1997, 1999, and 2005, respectively. Over the past decade, Dr. Valizadeh has taught numerous sections of five different courses covering topics such as semiconductor process technology, semiconductor materials and their properties, advanced solid state devices, transistor design for modern CMOS technology, and high speed transistors.
Device Physics Modeling Technology And Analysis For Silicon Mesfet
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Author : Iraj Sadegh Amiri
language : en
Publisher: Springer
Release Date : 2018-12-13
Device Physics Modeling Technology And Analysis For Silicon Mesfet written by Iraj Sadegh Amiri and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-12-13 with Technology & Engineering categories.
This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.