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Fundamentals Of Nanotransistors


Fundamentals Of Nanotransistors
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Fundamentals Of Nanotransistors


Fundamentals Of Nanotransistors
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Author : Mark S. Lundstrom
language : en
Publisher:
Release Date : 2017

Fundamentals Of Nanotransistors written by Mark S. Lundstrom and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with Electronic books categories.




Fundamentals Of Nanotransistors


Fundamentals Of Nanotransistors
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Author : Mark S Lundstrom
language : en
Publisher: World Scientific Publishing Company
Release Date : 2017-07-11

Fundamentals Of Nanotransistors written by Mark S Lundstrom and has been published by World Scientific Publishing Company this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-07-11 with Technology & Engineering categories.


The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, “bottom-up approach” that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.



Fundamentals Of Nanotransistors


Fundamentals Of Nanotransistors
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Author : Mark Lundstrom
language : en
Publisher: World Scientific Publishing Company Incorporated
Release Date : 2018

Fundamentals Of Nanotransistors written by Mark Lundstrom and has been published by World Scientific Publishing Company Incorporated this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018 with Technology & Engineering categories.


The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, "bottom-up approach" that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.



Nanoscale Transistors


Nanoscale Transistors
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Author : Mark Lundstrom
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-06-18

Nanoscale Transistors written by Mark Lundstrom and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-06-18 with Technology & Engineering categories.


Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was developed in the 1960's, channel lengths were about 10 micrometers, but researchers are now building transistors with channel lengths of less than 10 nanometers. New kinds of transistors and other devices are also being explored. Nanoscale MOSFET engineering continues, however, to be dominated by concepts and approaches originally developed to treat microscale devices. To push MOSFETs to their limits and to explore devices that may complement or even supplant them, a clear understanding of device physics at the nano/molecular scale will be essential. Our objective is to provide engineers and scientists with that understandin- not only of nano-devices, but also of the considerations that ultimately determine system performance. It is likely that nanoelectronics will involve much more than making smaller and different transistors, but nanoscale transistors provides a specific, clear context in which to address some broad issues and is, therefore, our focus in this monograph.



Fundamentals Of Electronic Materials And Devices A Gentle Introduction To The Quantum Classical World


Fundamentals Of Electronic Materials And Devices A Gentle Introduction To The Quantum Classical World
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Author : Avik Ghosh
language : en
Publisher: World Scientific
Release Date : 2023-02-02

Fundamentals Of Electronic Materials And Devices A Gentle Introduction To The Quantum Classical World written by Avik Ghosh and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-02-02 with Science categories.


The Romans built enduring bridges well before Newton came along, armed simply with a working knowledge of mechanics and materials. In contrast, today's bridge building is an elaborate enterprise involving CAD tools, composite materials and acoustic imaging. When technology is pushed to its limits, a working knowledge proves inadequate, and an in-depth understanding of core physical principles, both macroscopic and microscopic, top-down vs bottom-up, becomes essential.We find ourselves today at a similar crossroad in semiconductor device technology, where a working knowledge of solid state electronics is no longer enough. Faced with the prohibitive cost of computing and the slowdown of chip manufacturing, device scaling and the global supply chain, the semiconductor industry is forced to explore alternate platforms such as 2-D materials, spintronics, analog processing and quantum engineering.This book combines top-down classical device physics with bottom-up quantum transport in a single venue to provide the basis for such a scientific exploration. It is essential, easy reading for beginning undergraduate and practicing graduate students, physicists unfamiliar with device engineering and engineers untrained in quantum physics. With just a modest pre-requisite of freshman maths, the book works quickly through key concepts in quantum physics, Matlab exercises and original homeworks, to cover a wide range of topics from chemical bonding to Hofstader butterflies, domain walls to Chern insulators, solar cells to photodiodes, FinFETs to Majorana fermions. For the practicing device engineer, it provides new concepts such as the quantum of resistance, while for the practicing quantum physicist, it provides new contexts such as the tunnel transistor.



The Physics And Modeling Of Mosfets


The Physics And Modeling Of Mosfets
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Author : Mitiko Miura-Mattausch
language : en
Publisher: World Scientific
Release Date : 2008

The Physics And Modeling Of Mosfets written by Mitiko Miura-Mattausch and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Technology & Engineering categories.


This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.



Fundamentals Of Power Electronics


Fundamentals Of Power Electronics
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Author : Soumitra Kumar Mandal
language : en
Publisher: KHANNA PUBLISHING HOUSE
Release Date : 2025-06-01

Fundamentals Of Power Electronics written by Soumitra Kumar Mandal and has been published by KHANNA PUBLISHING HOUSE this book supported file pdf, txt, epub, kindle and other format this book has been release on 2025-06-01 with Technology & Engineering categories.




Applied Thermal Measurements At The Nanoscale A Beginner S Guide To Electrothermal Methods


Applied Thermal Measurements At The Nanoscale A Beginner S Guide To Electrothermal Methods
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Author : Zhen Chen
language : en
Publisher: World Scientific
Release Date : 2018-07-13

Applied Thermal Measurements At The Nanoscale A Beginner S Guide To Electrothermal Methods written by Zhen Chen and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-07-13 with Technology & Engineering categories.


This book aims to serve as a practical guide for novices to design and conduct measurements of thermal properties at the nanoscale using electrothermal techniques. An outgrowth of the authors’ tutorials for new graduate students in their own labs, it includes practical details on measurement design and selection, sensitivity and uncertainty analysis, and pitfalls and verifications. The information is particularly helpful for someone setting up their own experiment for the first time. The book emphasizes the integration of thermal analysis with practical experimental considerations, in order to design an experiment for best sensitivity and to configure the laboratory instruments accordingly. The focus is on the measurements of thermal conductivity, though thermal diffusivity and thermal boundary resistance (thermal contact resistance) are also briefly covered, and many of the principles can be generalized to other challenging thermal measurements.The reader is only expected to have the basic familiarity with electrical instruments typical of a university graduate in science or engineering, and an acquaintance with the elementary laws of heat transfer by conduction, convection, and radiation.



Lessons From Nanoelectronics A New Perspective On Transport Second Edition Part B Quantum Transport


Lessons From Nanoelectronics A New Perspective On Transport Second Edition Part B Quantum Transport
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Author : Supriyo Datta
language : en
Publisher: World Scientific
Release Date : 2018-03-23

Lessons From Nanoelectronics A New Perspective On Transport Second Edition Part B Quantum Transport written by Supriyo Datta and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-03-23 with Technology & Engineering categories.


Everyone is familiar with the amazing performance of a modern smartphone, powered by a billion-plus nanotransistors, each having an active region that is barely a few hundred atoms long. The same amazing technology has also led to a deeper understanding of the nature of current flow and heat dissipation on an atomic scale which is of broad relevance to the general problems of non-equilibrium statistical mechanics that pervade many different fields.This book is based on a set of two online courses originally offered in 2012 on nanoHUB-U and more recently in 2015 on edX. In preparing the second edition the author decided to split it into parts A and B titled Basic Concepts and Quantum Transport respectively, along the lines of the two courses. A list of available video lectures corresponding to different sections of this volume is provided upfront.To make these lectures accessible to anyone in any branch of science or engineering, the author assume very little background beyond linear algebra and differential equations. However, the author will be discussing advanced concepts that should be of interest even to specialists, who are encouraged to look at his earlier books for additional technical details.



Fundamentals Of Nanoscaled Field Effect Transistors


Fundamentals Of Nanoscaled Field Effect Transistors
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Author : Amit Chaudhry
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-23

Fundamentals Of Nanoscaled Field Effect Transistors written by Amit Chaudhry and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-23 with Technology & Engineering categories.


Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.