Electrical Properties Of Bulk Grown Nitrogen Doped Silicon
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Electrical Properties Of Bulk Grown Nitrogen Doped Silicon
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Author : Mary A. O'Leary (CAPT, USAF.)
language : en
Publisher:
Release Date : 1985
Electrical Properties Of Bulk Grown Nitrogen Doped Silicon written by Mary A. O'Leary (CAPT, USAF.) and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1985 with Hall effect categories.
Electrical Properties Of Bulk Grown Nitrogen Doped Silicon
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Author : M. A. O'Leary
language : en
Publisher:
Release Date : 1985
Electrical Properties Of Bulk Grown Nitrogen Doped Silicon written by M. A. O'Leary and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1985 with categories.
The electrical parameters of a boule of nitrogen doped float zone silicon were studied by Hall effect analysis. Samples were annealed at temperatures ranging from 800 to 900 C. In addition, a section of this boule was neutron transmutated (NTD) to increase the n-type doping. Samples from the NTD section were annealed at 800 C. Resistivity and mobility varied considerably from sample to sample, but the variation is not a function of annealing temperature. The annealed Si:N samples were found to be inhomogeneous; however, the Si:N NTD samples were homogeneous. In addition, annealing activated deep energy levels. The shallow energy levels reported in studies on ion implanted nitrogen in silicon were not found. The only shallow energy level found was phosphorus. The conclusion is nitrogen does not go into substitutional sites in silicon to any great extent. Although what happens to nitrogen in silicon is unknown it is suggested that nitrogen may form silicon-nitride complexes and precipitates, This could be the mechanism for strengthening the lattice.
Electrical Properties Of Nitrogen Doped Float Zone Silicon
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Author : M. A. O'Leary
language : en
Publisher:
Release Date : 1985
Electrical Properties Of Nitrogen Doped Float Zone Silicon written by M. A. O'Leary and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1985 with categories.
Examination of nitrogen doped float zone silicon indicates that electrical properties are similiar to commercial Czochralski material. This material deserves further consideration for use in high power device and intrinsic infrared detector applications. Temperature dependent Hall effect measurements have been made on as received and neutron transmutation doped (NTD) sample of a nitrogen doped float zone silicon crystal to determine its electrical properties. Samples were studied in both as-received state and after various high temperature anneals. Results were compared with commercial n-type Czochralski silicon and conventional neutron doped float zone silcion. Undoped, annealed samples of Si:N showed signs of inhomogeneities were not seen in lightly NTD's and annealed nitrogen doped material, indicating that even light doping will mask effects of the proposed precipitation. No evidence was detected for any electrically active level that could be directly related to the nitrogen.
Scientific And Technical Aerospace Reports
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Author :
language : en
Publisher:
Release Date : 1995
Scientific And Technical Aerospace Reports written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Aeronautics categories.
Iii Nitride Sic And Diamond Materials For Electronic Devices Volume 423
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Author : D. Kurt Gaskill
language : en
Publisher:
Release Date : 1996-11-15
Iii Nitride Sic And Diamond Materials For Electronic Devices Volume 423 written by D. Kurt Gaskill and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996-11-15 with Science categories.
This book differs from previous volumes on wide bandgap semiconductors in that the emphasis is specifically on materials aspects related to electronic properties and devices. Solid advances are reported in the growth techniques of all three materials groups. In particular, the critical importance of surfaces, interfaces, doping, defects and impurities is demonstrated. Potential device applications ranging from new high-frequency, high-power all-solid-state devices to unique cold-cathode electronic devices are presented. Whilst the results demonstrate real promise for a wide range of new solid-state devices that are not feasible with current production materials, it is also evident that substantial progress in materials research is needed to fulfill the real potential of these applications. Critical issues related to the electronic potential of all three materials are addressed. Topics include: device technologies - devices, metallizations, etching, and implantation; bulk and bulk-like crystal growth; film growth; defects and structural properties; doping and electrical properties and optical and field-emission properties.
Crystal Growth And Evaluation Of Silicon For Vlsi And Ulsi
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Author : Golla Eranna
language : en
Publisher: CRC Press
Release Date : 2014-12-08
Crystal Growth And Evaluation Of Silicon For Vlsi And Ulsi written by Golla Eranna and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-12-08 with Science categories.
Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemical
Single Crystals Of Electronic Materials
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Author : Roberto Fornari
language : en
Publisher: Woodhead Publishing
Release Date : 2018-09-18
Single Crystals Of Electronic Materials written by Roberto Fornari and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-09-18 with Technology & Engineering categories.
Single Crystals of Electronic Materials: Growth and Properties is a complete overview of the state-of-the-art growth of bulk semiconductors. It is not only a valuable update on the body of information on crystal growth of well-established electronic materials, such as silicon, III-V, II-VI and IV-VI semiconductors, but also includes chapters on novel semiconductors, such as wide bandgap oxides like ZnO, Ga2, O3, In2, O3, Al2, O3, nitrides (AIN and GaN), and diamond. Each chapter focuses on a specific material, providing a comprehensive overview that includes applications and requirements, thermodynamic properties, schematics of growth methods, and more. Presents the latest research and most comprehensive overview of both standard and novel semiconductors Provides a systematic examination of important electronic materials, including their applications, growth methods, properties, technologies and defect and doping issues Takes a close look at emerging materials, including wide bandgap oxides, nitrides and diamond
Properties And Applications Of Silicon Carbide
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Author : Rosario Gerhardt
language : en
Publisher: BoD – Books on Demand
Release Date : 2011-04-04
Properties And Applications Of Silicon Carbide written by Rosario Gerhardt and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-04-04 with Science categories.
In this book, we explore an eclectic mix of articles that highlight some new potential applications of SiC and different ways to achieve specific properties. Some articles describe well-established processing methods, while others highlight phase equilibria or machining methods. A resurgence of interest in the structural arena is evident, while new ways to utilize the interesting electromagnetic properties of SiC continue to increase.
Semiconductors And Semimetals
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Author :
language : en
Publisher: Academic Press
Release Date : 1971-11-12
Semiconductors And Semimetals written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1971-11-12 with Technology & Engineering categories.
Semiconductors and Semimetals
The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 3 1996
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Author : Hisham Z. Massoud
language : en
Publisher:
Release Date : 1996
The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 3 1996 written by Hisham Z. Massoud and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Science categories.