The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 3 1996
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The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 3 1996
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Author : Hisham Z. Massoud
language : en
Publisher:
Release Date : 1996
The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 3 1996 written by Hisham Z. Massoud and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Science categories.
The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 2
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Author : B.E. Deal
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-09
The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 2 written by B.E. Deal and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-09 with Science categories.
The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
The Physics And Chemistry Of Sio2 And The Si Sio2 Interface
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Author : B. E. Deal
language : en
Publisher:
Release Date : 2014-01-15
The Physics And Chemistry Of Sio2 And The Si Sio2 Interface written by B. E. Deal and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-01-15 with categories.
The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 4 2000
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Author : Hisham Z. Massoud
language : en
Publisher:
Release Date : 2000
The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 4 2000 written by Hisham Z. Massoud and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Nature categories.
Silicon Nitride And Silicon Dioxide Thin Insulating Films
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Author : M. Jamal Deen
language : en
Publisher: The Electrochemical Society
Release Date : 1997
Silicon Nitride And Silicon Dioxide Thin Insulating Films written by M. Jamal Deen and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Science categories.
Fundamental Aspects Of Silicon Oxidation
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Author : Yves J. Chabal
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Fundamental Aspects Of Silicon Oxidation written by Yves J. Chabal and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.
Fundamental Aspects Of Ultrathin Dielectrics On Si Based Devices
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Author : Eric Garfunkel
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Fundamental Aspects Of Ultrathin Dielectrics On Si Based Devices written by Eric Garfunkel and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
Passivity Of Metals And Semiconductors
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Author : Michael Brian Ives
language : en
Publisher: The Electrochemical Society
Release Date : 2001
Passivity Of Metals And Semiconductors written by Michael Brian Ives and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with Science categories.
Semiconductor Silicon 2002
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Author : Howard R. Huff
language : en
Publisher: The Electrochemical Society
Release Date : 2002
Semiconductor Silicon 2002 written by Howard R. Huff and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Science categories.
The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 5
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Author : Hisham Z. Massoud
language : en
Publisher: ECS Transactions
Release Date : 2005-01-01
The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 5 written by Hisham Z. Massoud and has been published by ECS Transactions this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-01-01 with Dielectrics categories.
This issue of ECS Transactions places a focus on ultrathin gate dielectrics: novel technologies, characterization methods, process modeling, fundamental limits, and projections for scaling the gate oxide thickness.