Electrical Properties Of Indium Arsenide Nanowires And Their Field Effect Transistors
DOWNLOAD
Download Electrical Properties Of Indium Arsenide Nanowires And Their Field Effect Transistors PDF/ePub or read online books in Mobi eBooks. Click Download or Read Online button to get Electrical Properties Of Indium Arsenide Nanowires And Their Field Effect Transistors book now. This website allows unlimited access to, at the time of writing, more than 1.5 million titles, including hundreds of thousands of titles in various foreign languages. If the content not found or just blank you must refresh this page
Electrical Properties Of Indium Arsenide Nanowires And Their Field Effect Transistors
DOWNLOAD
Author : Mengqi Fu
language : en
Publisher: Springer
Release Date : 2018-11-29
Electrical Properties Of Indium Arsenide Nanowires And Their Field Effect Transistors written by Mengqi Fu and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-11-29 with Science categories.
This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
Development Of Indium Arsenide Nanowire Field Effect Transistors As Chemical Sensors
DOWNLOAD
Author : Alex Chi-Wei Tseng
language : en
Publisher:
Release Date : 2018
Development Of Indium Arsenide Nanowire Field Effect Transistors As Chemical Sensors written by Alex Chi-Wei Tseng and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018 with categories.
Chemical sensors based on field-effect transistors were fabricated from hundreds of aligned indium arsenide nanowires which show promise for high performance based on their high electron mobility and charge sensitivity. Sensing responses to analytes in vapour and solution phases were collected from these multi-wire devices via real-time current measurements and parameters extracted from electrical transport characterization. In the vapour phase, a linear response to acetic acid was observed in surface charge densities determined from a model for the sub-threshold behaviour. These responses distinguished between strongly chemisorptive bonding of acetic acid versus weaker bonding of methanol and 2-butanone. In the solution phase, near-Nernstian sensitivity to sodium ions of a crown ether functionalized, fluorosilicone membrane was determined from the threshold voltage and hysteresis in transport characteristics. A Nernst-Planck-Poisson model was investigated to interpret the electro-diffusive processes but did not accurately capture the electric field dependence. Suggestions to address the shortcomings are given.
Nanoelectronics For Next Generation Integrated Circuits
DOWNLOAD
Author : Rohit Dhiman
language : en
Publisher: CRC Press
Release Date : 2022-11-23
Nanoelectronics For Next Generation Integrated Circuits written by Rohit Dhiman and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-11-23 with Technology & Engineering categories.
The incessant scaling of complementary metal-oxide semiconductor (CMOS) technology has resulted in significant performance improvements in very-large-scale integration (VLSI) design techniques and system architectures. This trend is expected to continue in the future, but this requires breakthroughs in the design of nano-CMOS and post-CMOS technologies. Nanoelectronics refers to the possible future technologies beyond conventional CMOS scaling limits. This volume addresses the current state-of-the-art nanoelectronic technologies and presents potential options for next-generation integrated circuits. Nanoelectronics for Next-generation Integrated Circuits is a useful reference guide for researchers, engineers, and advanced students working on the frontier of the design and modeling of nanoelectronic devices and their integration aspects with future CMOS circuits. This comprehensive volume eloquently presents the design methodologies for spintronics memories, quantum-dot cellular automata, and post-CMOS FETs, including applications in emerging integrated circuit technologies.
A Simulation Study Of Enhancement Mode Indium Arsenide Nanowire Field Effect Transistor
DOWNLOAD
Author : Harish Narendar
language : en
Publisher:
Release Date : 2009
A Simulation Study Of Enhancement Mode Indium Arsenide Nanowire Field Effect Transistor written by Harish Narendar and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
As device dimensions continue to shrink into the nanometer length regime, conventional complementary metal-oxide semiconductor (CMOS) technology will approach its fundamental physical limits. Further miniaturization based on conventional scaling appears neither technically nor economically feasible. New strategies, including the use of novel materials and one-dimensional device concepts, innovative device architectures, and smart integration schemes need to be explored. They are crucial to extending current capabilities and maintaining momentum beyond the end of the technology roadmap. Semiconducting nanowires are an attractive and viable option for channel structures. By virtue of their potential one-dimensionality, such nanoscale structures introduce quantum confinement effects, thus enabling new functionalities and device concepts. In this thesis we study performance limits of Indium Arsenide nanowire Field Effect Transistors (InAs NWFETs) in a Gate All Around (GAA) structure and examine its upper limits of performance. InAs in particular is an attractive candidate for NW-based electronic devices because of its very high electron mobility at room temperature of 30,000 cm2/Vs in comparison to silicon's mobility of 1480 cm2/Vs. The device simulations were carried out using MultiGate Nanowire (Nanowire MG) simulator made available at NanoHUB (www.nanohub.org) by Network for Computational Nanotechnology (NCN). The InAs NWFET was simulated for variations in channel diameter, channel length, oxide thickness and the corresponding Id -- Vg characteristics were analyzed. Short Channel Effects (SCEs) namely Drain Induced Barrier Lowering (DIBL) and threshold voltage roll off were studied. Sub-threshold slope and ON/OFF current variations were analyzed for variations in device dimensions. Finally the device characteristics of Silicon Nanowire Field Effect Transistors (Si NWFETs) were simulated for the same variations in channel diameter, channel length and oxide thickness and a comparative study of the device performance between InAs NWFET and Si NWFET was carried out to assess the effect of varying the channel material system. It was concluded that Silicon NWFET showed higher immunity towards threshold voltage roll off with scaling in channel length and exhibited better sub-threshold slopes for the same device structure in comparison to the InAs NWFET. Also it was observed that Silicon NWFET operated with lower leakage currents compared to InAs NWFET. Overall it was concluded that SiNWFET exhibited higher immunity towards short channel effects while InAs NWFET showed higher drive currents in the order of 0.10x10^(−3) A/ [mu] m compared to 8.4x10^(−6) A/ [mu] m which would translate to higher switching speeds.
Nanowire Electronics
DOWNLOAD
Author : Guozhen Shen
language : en
Publisher: Springer
Release Date : 2018-11-23
Nanowire Electronics written by Guozhen Shen and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-11-23 with Technology & Engineering categories.
This book gives a comprehensive overview of recent advances in developing nanowires for building various kinds of electronic devices. Specifically the applications of nanowires in detectors, sensors, circuits, energy storage and conversion, etc., are reviewed in detail by the experts in this field. Growth methods of different kinds of nanowires are also covered when discussing the electronic applications. Through discussing these cutting edge researches, the future directions of nanowire electronics are identified.
Journal Of Nano Research Vol 81
DOWNLOAD
Author : Efstathios I. Meletis
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 2023-12-22
Journal Of Nano Research Vol 81 written by Efstathios I. Meletis and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-12-22 with Science categories.
This volume of the "Journal of Nano Research" includes peer-reviewed articles reflecting the practical research results in the synthesis and properties analysis of nanomaterials and nanoparticles for various engineering goals - photocatalytic applications, micro- and optoelectronics, photovoltaic and electrochemical use in solar cells and energy storage devices, for applications in biomedicine, creating protective coatings, etc. The presented articles collection will be helpful to specialists from many branches of engineering whose activity is related to nanomaterials and nanotechnologies.
Advances In Iii V Semiconductor Nanowires And Nanodevices
DOWNLOAD
Author : Jianye Li
language : en
Publisher: Bentham Science Publishers
Release Date : 2011-09-09
Advances In Iii V Semiconductor Nanowires And Nanodevices written by Jianye Li and has been published by Bentham Science Publishers this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-09-09 with Technology & Engineering categories.
"Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest fo"
Indium Arsenide Data Sheets
DOWNLOAD
Author : M. Neuberger
language : en
Publisher:
Release Date : 1962
Indium Arsenide Data Sheets written by M. Neuberger and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1962 with Indium categories.
Next Generation Materials For Sustainable Engineering
DOWNLOAD
Author : Kulkarni, Shrikaant
language : en
Publisher: IGI Global
Release Date : 2024-03-01
Next Generation Materials For Sustainable Engineering written by Kulkarni, Shrikaant and has been published by IGI Global this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-03-01 with Technology & Engineering categories.
As the global community confronts challenges in energy, environment, health, agriculture, industry, and construction, the significance of sustainable materials becomes paramount. The looming specter of resource depletion necessitates a paradigm shift, urging researchers and engineers to anticipate future needs and forge materials that align with evolving requirements. Next Generation Materials for Sustainable Engineering underscores the urgency of conserving resources and provides a blueprint for achieving this through judicious and sustainable use. From polymers to alloys, nanocomposites to biomaterials, this book traverses the expansive landscape of materials, deciphering their structures and properties with an eye toward sustainability. The relentless pursuit of innovation in synthesis protocols takes center stage, unveiling pathways to creating novel materials. The chapters dedicated to specific material applications, such as spintronics, nanowires, phase change materials, and nanocomposites, offer a detailed panorama of the latest advancements. This book bridges the gap between theoretical understanding and practical applications by exploring materials for renewable energy, electronic devices, artificial photosynthesis, lithium-sulfur batteries, supercapacitors, and biomedical applications. The book serves as a beacon for academicians, researchers, and material scientists, guiding them through state-of-the-art developments, emerging trends, and challenges in material science and engineering.
Nanowire Transistors
DOWNLOAD
Author : Jean-Pierre Colinge
language : en
Publisher: Cambridge University Press
Release Date : 2016-04-21
Nanowire Transistors written by Jean-Pierre Colinge and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-04-21 with Science categories.
A self-contained and up-to-date account of the current developments in the physics and technology of nanowire semiconductor devices.