Development Of Indium Arsenide Nanowire Field Effect Transistors As Chemical Sensors
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Development Of Indium Arsenide Nanowire Field Effect Transistors As Chemical Sensors
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Author : Alex Chi-Wei Tseng
language : en
Publisher:
Release Date : 2018
Development Of Indium Arsenide Nanowire Field Effect Transistors As Chemical Sensors written by Alex Chi-Wei Tseng and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018 with categories.
Chemical sensors based on field-effect transistors were fabricated from hundreds of aligned indium arsenide nanowires which show promise for high performance based on their high electron mobility and charge sensitivity. Sensing responses to analytes in vapour and solution phases were collected from these multi-wire devices via real-time current measurements and parameters extracted from electrical transport characterization. In the vapour phase, a linear response to acetic acid was observed in surface charge densities determined from a model for the sub-threshold behaviour. These responses distinguished between strongly chemisorptive bonding of acetic acid versus weaker bonding of methanol and 2-butanone. In the solution phase, near-Nernstian sensitivity to sodium ions of a crown ether functionalized, fluorosilicone membrane was determined from the threshold voltage and hysteresis in transport characteristics. A Nernst-Planck-Poisson model was investigated to interpret the electro-diffusive processes but did not accurately capture the electric field dependence. Suggestions to address the shortcomings are given.
Electrical Properties Of Indium Arsenide Nanowires And Their Field Effect Transistors
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Author : Mengqi Fu
language : en
Publisher: Springer
Release Date : 2018-11-29
Electrical Properties Of Indium Arsenide Nanowires And Their Field Effect Transistors written by Mengqi Fu and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-11-29 with Science categories.
This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
Nanowire Field Effect Transistors Principles And Applications
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Author : Dae Mann Kim
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-10-23
Nanowire Field Effect Transistors Principles And Applications written by Dae Mann Kim and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-10-23 with Technology & Engineering categories.
“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
A Simulation Study Of Enhancement Mode Indium Arsenide Nanowire Field Effect Transistor
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Author : Harish Narendar
language : en
Publisher:
Release Date : 2009
A Simulation Study Of Enhancement Mode Indium Arsenide Nanowire Field Effect Transistor written by Harish Narendar and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
As device dimensions continue to shrink into the nanometer length regime, conventional complementary metal-oxide semiconductor (CMOS) technology will approach its fundamental physical limits. Further miniaturization based on conventional scaling appears neither technically nor economically feasible. New strategies, including the use of novel materials and one-dimensional device concepts, innovative device architectures, and smart integration schemes need to be explored. They are crucial to extending current capabilities and maintaining momentum beyond the end of the technology roadmap. Semiconducting nanowires are an attractive and viable option for channel structures. By virtue of their potential one-dimensionality, such nanoscale structures introduce quantum confinement effects, thus enabling new functionalities and device concepts. In this thesis we study performance limits of Indium Arsenide nanowire Field Effect Transistors (InAs NWFETs) in a Gate All Around (GAA) structure and examine its upper limits of performance. InAs in particular is an attractive candidate for NW-based electronic devices because of its very high electron mobility at room temperature of 30,000 cm2/Vs in comparison to silicon's mobility of 1480 cm2/Vs. The device simulations were carried out using MultiGate Nanowire (Nanowire MG) simulator made available at NanoHUB (www.nanohub.org) by Network for Computational Nanotechnology (NCN). The InAs NWFET was simulated for variations in channel diameter, channel length, oxide thickness and the corresponding Id -- Vg characteristics were analyzed. Short Channel Effects (SCEs) namely Drain Induced Barrier Lowering (DIBL) and threshold voltage roll off were studied. Sub-threshold slope and ON/OFF current variations were analyzed for variations in device dimensions. Finally the device characteristics of Silicon Nanowire Field Effect Transistors (Si NWFETs) were simulated for the same variations in channel diameter, channel length and oxide thickness and a comparative study of the device performance between InAs NWFET and Si NWFET was carried out to assess the effect of varying the channel material system. It was concluded that Silicon NWFET showed higher immunity towards threshold voltage roll off with scaling in channel length and exhibited better sub-threshold slopes for the same device structure in comparison to the InAs NWFET. Also it was observed that Silicon NWFET operated with lower leakage currents compared to InAs NWFET. Overall it was concluded that SiNWFET exhibited higher immunity towards short channel effects while InAs NWFET showed higher drive currents in the order of 0.10x10^(−3) A/ [mu] m compared to 8.4x10^(−6) A/ [mu] m which would translate to higher switching speeds.
Nanoelectronics For Next Generation Integrated Circuits
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Author : Rohit Dhiman
language : en
Publisher: CRC Press
Release Date : 2022-11-23
Nanoelectronics For Next Generation Integrated Circuits written by Rohit Dhiman and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-11-23 with Technology & Engineering categories.
The incessant scaling of complementary metal-oxide semiconductor (CMOS) technology has resulted in significant performance improvements in very-large-scale integration (VLSI) design techniques and system architectures. This trend is expected to continue in the future, but this requires breakthroughs in the design of nano-CMOS and post-CMOS technologies. Nanoelectronics refers to the possible future technologies beyond conventional CMOS scaling limits. This volume addresses the current state-of-the-art nanoelectronic technologies and presents potential options for next-generation integrated circuits. Nanoelectronics for Next-generation Integrated Circuits is a useful reference guide for researchers, engineers, and advanced students working on the frontier of the design and modeling of nanoelectronic devices and their integration aspects with future CMOS circuits. This comprehensive volume eloquently presents the design methodologies for spintronics memories, quantum-dot cellular automata, and post-CMOS FETs, including applications in emerging integrated circuit technologies.
The Development Of An Indium Gallium Arsenide Junction Field Effect Transistor For Use In Optical Receivers
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Author : D. Wake
language : en
Publisher:
Release Date : 1987
The Development Of An Indium Gallium Arsenide Junction Field Effect Transistor For Use In Optical Receivers written by D. Wake and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987 with categories.
Advances In Iii V Semiconductor Nanowires And Nanodevices
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Author : Jianye Li
language : en
Publisher: Bentham Science Publishers
Release Date : 2011-09-09
Advances In Iii V Semiconductor Nanowires And Nanodevices written by Jianye Li and has been published by Bentham Science Publishers this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-09-09 with Technology & Engineering categories.
"Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest fo"
Chemical And Biochemical Sensors Based On Silicon Nanowire Field Effect Transistor Arrays
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Author : Mathias Wipf
language : en
Publisher:
Release Date : 2014
Chemical And Biochemical Sensors Based On Silicon Nanowire Field Effect Transistor Arrays written by Mathias Wipf and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.
Design Of Indium Arsenide Nanowire Sensors For Ph And Biological Sensing And Low Temperature Transport Through P Doped Indium Arsenide Nanowires
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Author :
language : en
Publisher:
Release Date : 2013
Design Of Indium Arsenide Nanowire Sensors For Ph And Biological Sensing And Low Temperature Transport Through P Doped Indium Arsenide Nanowires written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with categories.
Silicon Nanowire Field Effect Chemical Sensor
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Author : Songyue Chen
language : en
Publisher:
Release Date : 2011
Silicon Nanowire Field Effect Chemical Sensor written by Songyue Chen and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.