Electrical Properties Of Nitrogen And Oxygen Ion Implanted Silicon
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Electrical Properties Of Nitrogen And Oxygen Ion Implanted Silicon
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Author : Vince Peter Tovizi
language : en
Publisher:
Release Date : 1976
Electrical Properties Of Nitrogen And Oxygen Ion Implanted Silicon written by Vince Peter Tovizi and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1976 with categories.
Ion Implantation In Semiconductors
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Author : Susumu Namba
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Ion Implantation In Semiconductors written by Susumu Namba and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.
Properties Of Ion Implanted Boron Nitrogen And Phosphorus In Single Crystal Silicon
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Author : Walter James Kleinfelder
language : en
Publisher:
Release Date : 1967
Properties Of Ion Implanted Boron Nitrogen And Phosphorus In Single Crystal Silicon written by Walter James Kleinfelder and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1967 with Boron categories.
The technique of ion implantation provides a method of introducing impurities into semiconductors for the purpose of selectively doping the material to form device structures. The purpose of the research reported here was to investigate the usefulness of this technique for implanting the elements boron, phosphorus, and nitrogen into the semiconductor silicon. The material produced by this method was analyzed in relation to both its physical properties and to the electrical characteristics of the device structures obtained. Planar and mesa diodes were fabricated which had low leakage and sharp reverse breakdown characteristics. Also by ion implantation methods, useful planar transistors were made which exhibited common-emitter current gains up to 30. (Author).
Nitrogen Implanted Silicon Ii Electrical Properties
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Author : J. B. Mitchell
language : en
Publisher:
Release Date : 1974
Nitrogen Implanted Silicon Ii Electrical Properties written by J. B. Mitchell and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1974 with categories.
Properties Of Ion Implanted Boron Nitrogen And Phosophorus In Single Crystal Silicon
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Author : Walter James Kleinfelder
language : en
Publisher:
Release Date : 1967
Properties Of Ion Implanted Boron Nitrogen And Phosophorus In Single Crystal Silicon written by Walter James Kleinfelder and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1967 with Ion implantation categories.
High Energy And High Dose Ion Implantation
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Author : S.U. Campisano
language : en
Publisher: Elsevier
Release Date : 1992-06-16
High Energy And High Dose Ion Implantation written by S.U. Campisano and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992-06-16 with Technology & Engineering categories.
Ion beam processing is a means of producing both novel materials and structures. The contributions in this volume strongly focus on this aspect and include many papers reporting on the modification of the electrical and structural properties of the target materials, both metals and semiconductors, as well as the synthesis of buried and surface compound layers. Many examples on the applications of high energy and high dose ion implantation are also given. All of the papers from Symposia C and D are presented in this single volume because the interests of many of the participants span both topics. Additionally many of the materials science aspects, including experimental methods, equipment and processing problems, diagnostic and analytical techniques are common to both symposia.
Electrical Properties Of Bulk Grown Nitrogen Doped Silicon
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Author : M. A. O'Leary
language : en
Publisher:
Release Date : 1985
Electrical Properties Of Bulk Grown Nitrogen Doped Silicon written by M. A. O'Leary and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1985 with categories.
The electrical parameters of a boule of nitrogen doped float zone silicon were studied by Hall effect analysis. Samples were annealed at temperatures ranging from 800 to 900 C. In addition, a section of this boule was neutron transmutated (NTD) to increase the n-type doping. Samples from the NTD section were annealed at 800 C. Resistivity and mobility varied considerably from sample to sample, but the variation is not a function of annealing temperature. The annealed Si:N samples were found to be inhomogeneous; however, the Si:N NTD samples were homogeneous. In addition, annealing activated deep energy levels. The shallow energy levels reported in studies on ion implanted nitrogen in silicon were not found. The only shallow energy level found was phosphorus. The conclusion is nitrogen does not go into substitutional sites in silicon to any great extent. Although what happens to nitrogen in silicon is unknown it is suggested that nitrogen may form silicon-nitride complexes and precipitates, This could be the mechanism for strengthening the lattice.
Ion Implantation In Semiconductors
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Author : Ingolf Ruge
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Ion Implantation In Semiconductors written by Ingolf Ruge and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. It would be impos sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of new kinds of devices and provide power ful new tools for materials investigations. It was, therefore, appropriate to arrange the II. International Conference on Ion Implantation in Semiconductors within the rather short time of one year since the first conference was held in 1970 in Thousand Oaks, California. Although ori ginally planned on a small scale with a very limited number of participants, more than two hundred scientists from 15 countries participated in the Conference which was held May 24 - 28, 1971 at the Congress Center in Garmisch-Partenkirchen. This volume contains the papers that were presented at the Conference. Due to the tremendous volume of research presented, publication here of all the works in full detail was not possible. Many authors therefore graciously agreed to submit abbreviated versions of their papers.
Nuclear Science Abstracts
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Author :
language : en
Publisher:
Release Date : 1975
Nuclear Science Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1975 with Nuclear energy categories.
Ion Implantation In Semiconductors And Other Materials
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Author : Billy Crowder
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-03-13
Ion Implantation In Semiconductors And Other Materials written by Billy Crowder and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-13 with Science categories.
During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch Partenkirchen, Germany, in 1971. At the present time, our under standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implanta tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion Implanta tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implanta tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and I. Ruge. The Conference attracted 180 participants from twelve countries. The success of the Conference was due in large measure to the financial support of our sponsors, Air Force Cambridge Research Laboratories and the Office of Naval Research.