Electron Devices Research
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Electron Devices Research
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Author : Stanford University. Electron Devices Laboratory
language : en
Publisher:
Release Date : 1962
Electron Devices Research written by Stanford University. Electron Devices Laboratory and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1962 with Electronics categories.
Electron Devices Research Consolidated Quarterly Status Reports
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Author : Stanford University Stanford Electronics Laboratories
language : en
Publisher:
Release Date : 1958
Electron Devices Research Consolidated Quarterly Status Reports written by Stanford University Stanford Electronics Laboratories and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1958 with categories.
Electron Devices Research
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Author : STANFORD UNIV CALIF STANFORD ELECTRONICS LABS.
language : en
Publisher:
Release Date : 1961
Electron Devices Research written by STANFORD UNIV CALIF STANFORD ELECTRONICS LABS. and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1961 with categories.
Materials And Processes For Electron Devices
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Author : National Research Council (U.S.). Ad Hoc Committee on Materials and Processes for Electron Devices
language : en
Publisher:
Release Date : 1972
Materials And Processes For Electron Devices written by National Research Council (U.S.). Ad Hoc Committee on Materials and Processes for Electron Devices and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1972 with Technology & Engineering categories.
Single Electron Devices And Circuits In Silicon
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Author : Zahid Ali Khan Durrani
language : en
Publisher: World Scientific
Release Date : 2010
Single Electron Devices And Circuits In Silicon written by Zahid Ali Khan Durrani and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with Mathematics categories.
This book reviews research on single-electron devices and circuits in silicon. These devices provide a means to control electronic charge at the one-electron level and are promising systems for the development of few-electron, nanoscale electronic circuits. The book considers the design, fabrication, and characterization of single-electron transistors, single-electron memories, few-electron transfer devices such as electron pumps and turnstiles, and single-electron logic devices. A review of the many different approaches used for the experimental realisation of these devices is provided and devices developed during the author''s own research are used as detailed examples. An introduction to the physics of single-electron charging effects is included. Sample Chapter(s). Chapter 1: Introduction (301 KB). Contents: Introduction; Single-Electron Charging Effects; Single-Electron Transistors in Silicon; Single-Electron Memory; Few-Electron Transfer Devices; Single-Electron Logic Circuits. Readership: Researchers, academics, and postgraduate students in nanoelectronics, nanofabrication, nanomaterials and nanostructures, quantum physics and electrical & electronic engineering.
Physics Of Quantum Electron Devices
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Author : Federico Capasso
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-03-07
Physics Of Quantum Electron Devices written by Federico Capasso and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-07 with Technology & Engineering categories.
The ability to engineer the bandstructure and the wavefunction over length scales previously inaccessible to technology using artificially structured materials and nanolithography has led to a new class of electron semiconductor devices whose operation is controlled by quantum effects. These structures not only represent exciting tools for investigating new quantum phenomena in semiconductors, but also offer exciting opportunities for applications. This book gives the first comprehensive treatment of the physics of quantum electron devices. This interdisciplinary field, at the junction between material science, physics and technology, has witnessed an explosive growth in recent years. This volume presents a detailed coverage of the physics of the underlying phenomena, and their device and circuit applications, together with fabrication and growth technology.
Electronic Devices Architectures For The Nano Cmos Era
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Author : Simon Deleonibus
language : en
Publisher: CRC Press
Release Date : 2019-05-08
Electronic Devices Architectures For The Nano Cmos Era written by Simon Deleonibus and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-05-08 with Technology & Engineering categories.
In this book, internationally recognized researchers give a state-of-the-art overview of the electronic device architectures required for the nano-CMOS era and beyond. Challenges relevant to the scaling of CMOS nanoelectronics are addressed through different core CMOS and memory device options in the first part of the book. The second part reviews new device concepts for nanoelectronics beyond CMOS. The book covers the fundamental limits of core CMOS, improving scaling by the introduction of new materials or processes, new architectures using SOI, multigates and multichannels, and quantum computing.
High Frequency Gan Electronic Devices
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Author : Patrick Fay
language : en
Publisher: Springer
Release Date : 2019-08-01
High Frequency Gan Electronic Devices written by Patrick Fay and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-08-01 with Technology & Engineering categories.
This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides “vertically integrated” coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.
Emerging Nanoelectronic Devices
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Author : An Chen
language : en
Publisher: John Wiley & Sons
Release Date : 2015-01-27
Emerging Nanoelectronic Devices written by An Chen and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-01-27 with Technology & Engineering categories.
Emerging Nanoelectronic Devices focuses on the future direction of semiconductor and emerging nanoscale device technology. As the dimensional scaling of CMOS approaches its limits, alternate information processing devices and microarchitectures are being explored to sustain increasing functionality at decreasing cost into the indefinite future. This is driving new paradigms of information processing enabled by innovative new devices, circuits, and architectures, necessary to support an increasingly interconnected world through a rapidly evolving internet. This original title provides a fresh perspective on emerging research devices in 26 up to date chapters written by the leading researchers in their respective areas. It supplements and extends the work performed by the Emerging Research Devices working group of the International Technology Roadmap for Semiconductors (ITRS). Key features: • Serves as an authoritative tutorial on innovative devices and architectures that populate the dynamic world of “Beyond CMOS” technologies. • Provides a realistic assessment of the strengths, weaknesses and key unknowns associated with each technology. • Suggests guidelines for the directions of future development of each technology. • Emphasizes physical concepts over mathematical development. • Provides an essential resource for students, researchers and practicing engineers.
Iii Nitride Electronic Devices
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Author : Rongming Chu
language : en
Publisher: Academic Press
Release Date : 2019-10
Iii Nitride Electronic Devices written by Rongming Chu and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-10 with Electronic apparatus and appliances categories.
III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field